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Memory (33)

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Supply Current-Max:
230 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Unit Weight	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS8162Z36DB-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DB-200I	200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT		524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.25		No		3.6 V	2.3 V	2.5 V		NBT SRAM					Tray	GS8162Z36DB			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	18 Mbit		SYNCHRONOUS	230 mA	6.5 ns		512 k x 36	1.99 mm	36		SRAM		18874368 bit		PARALLEL	ZBT SRAM	SRAM	22 mm	14 mm
Mfr Part No GS8161E36DGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	4.2 ns	GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161E36DGT-200I	200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT		524288 words	512000	85 °C	-40 °C	UNSPECIFIED	QFP	QFP,	RECTANGULAR	FLATPACK	Active	QFP	NOT SPECIFIED	5.64	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst					Tray	GS8161E36DGT			3A991.B.2.B	DCD Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1		compliant	100	R-XQFP-G100	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	18 Mbit		SYNCHRONOUS	230 mA	6.5 ns		512 k x 36		36		SRAM		18874368 bit		PARALLEL	CACHE SRAM	SRAM
Mfr Part No GS8161E32DD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36			GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																		3.6 V	2.3 V			SyncBurst					Tray	GS8161E32DD				DCD Pipeline/Flow Through						Memory & Data Storage														18 Mbit			230 mA	6.5 ns		512 k x 32				SRAM						SRAM
Mfr Part No GS816132DGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT															Details			3.6 V	2.3 V			SyncBurst					Tray	GS816132DGD				Pipeline/Flow Through						Memory & Data Storage														18 Mbit			230 mA	6.5 ns		512 k x 32				SRAM						SRAM
Mfr Part No GS8162Z36DD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology	SDR	36		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords													N		FBGA	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V		Industrial grade	-40 to 100 °C	Tray	GS8162Z36DD				NBT Pipeline/Flow Through						Memory & Data Storage								165						18 Mbit	4		230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36			19 Bit	SRAM	18 Mbit		Industrial			SRAM
Mfr Part No GS8161E36DD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																		3.6 V	2.3 V			SyncBurst					Tray	GS8161E36DD				DCD Pipeline/Flow Through						Memory & Data Storage														18 Mbit			230 mA	6.5 ns		512 k x 36				SRAM						SRAM
Mfr Part No GS8160E36DGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160E36DGT-200I	200 MHz			+ 100 C	SDR		- 40 C	Yes			SMD/SMT		524288 words	512000			PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	4.9	Details	Yes		3.6 V	2.3 V	1.8 V		SyncBurst		0.344551 oz			Tray	GS8160E36DGT			3A991.B.2.B	Pipeline/Flow Through				ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2 V		1.7 V	18 Mbit		SYNCHRONOUS	230 mA	6.5 ns		512 k x 36	1.6 mm	36		SRAM		18874368 bit		PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
Mfr Part No GS816036DGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816036DGT-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 100 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	1.72	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	0.216306 oz	Industrial grade	-40 to 100 °C	Tray	GS816036DGT			3A991.B.2.B	Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	1.6 mm	36	20 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
Mfr Part No GS8160Z36DGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160Z36DGT-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 100 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	1.77	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	0.297150 oz	Industrial grade	-40 to 100 °C	Tray	GS8160Z36DGT			3A991.B.2.B	NBT Pipeline/Flow Through				PIPELINE ARCHITECTURE, FLOW-THROUGH, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	1.6 mm	18	19 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	ZBT SRAM	SRAM	20 mm	14 mm
Mfr Part No GS816136DGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816136DGT-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	QFP	QFP,	RECTANGULAR	FLATPACK	Active	QFP	NOT SPECIFIED	5.26	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		Industrial grade	-40 to 85 °C	Tray	GS816136DGT			3A991.B.2.B	Pipeline/Flow Through				FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1		compliant	100	R-PQFP-G100		2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36		36	19 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	CACHE SRAM	SRAM
Mfr Part No GS78132AB-10I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	12 Weeks	BGA-119	YES	119	10 ns	GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS78132AB-10I			3.6 V	+ 85 C	SDR	3 V	- 40 C		3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.23	N	No	FBGA	3.6 V	3 V	3.3 V	Asynchronous		3.3000 V		Industrial grade	-40 to 85 °C		GS78132AB	e0	No	3A991.B.2.B	Asynchronous	TIN LEAD			THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	3.6 V	INDUSTRIAL	3 V	8 Mbit	4	ASYNCHRONOUS	230 mA	10 ns		256 k x 32	1.99 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	STANDARD SRAM	SRAM	22 mm	14 mm
Mfr Part No GS78132AGB-10I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-119	YES	119	10 ns	GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS78132AGB-10I			3.6 V	+ 85 C	SDR	3 V	- 40 C		3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.23	Details	Yes	FBGA	3.6 V	3 V	3.3 V	Asynchronous		3.3000 V		Industrial grade	-40 to 85 °C		GS78132AGB	e1	Yes	3A991.B.2.B	Asynchronous	TIN SILVER COPPER			THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	3.6 V	INDUSTRIAL	3 V	8 Mbit	4	ASYNCHRONOUS	230 mA	10 ns		256 k x 32	1.99 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	STANDARD SRAM	SRAM	22 mm	14 mm
Mfr Part No GS8162Z36DGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DGD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	4.77	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V		Industrial grade	-40 to 100 °C	Tray	GS8162Z36DGD			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	1.4 mm	36	19 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	ZBT SRAM	SRAM	15 mm	13 mm
Mfr Part No GS8161Z36DGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z36DGD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.26	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V		Industrial grade	-40 to 85 °C	Tray	GS8161Z36DGD			3A991.B.2.B	NBT				FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	1.4 mm	36	19 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	ZBT SRAM	SRAM	15 mm	13 mm
Mfr Part No GS816236DGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT															Compliant			3.6 V	2.3 V			SyncBurst					Bulk	GS816236DGD				Pipeline/Flow Through		100 °C	-40 °C			Memory & Data Storage														18 Mbit	4		230 mA	6.5 ns		512 k x 36			19 b	SRAM	18 Mb					SRAM			No
Mfr Part No GS8161E36DGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT															Details			3.6 V	2.3 V			SyncBurst					Tray	GS8161E36DGD				DCD Pipeline/Flow Through						Memory & Data Storage														18 Mbit			230 mA	6.5 ns		512 k x 36				SRAM						SRAM
Mfr Part No GS816236DD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816236DD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.25		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		Industrial grade	-40 to 100 °C	Tray	GS816236DD			3A991.B.2.B	Pipeline/Flow Through				ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	1.4 mm	36	19 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
Mfr Part No GS8160E32DGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160E32DGT-200I	200 MHz			+ 100 C	SDR		- 40 C	Yes			SMD/SMT		524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.39	Details	Yes		3.6 V	2.3 V	1.8 V		SyncBurst					Tray	GS8160E32DGT			3A991.B.2.B	Pipeline/Flow Through				ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2 V	INDUSTRIAL	1.7 V	18 Mbit		SYNCHRONOUS	230 mA	6.5 ns		512 k x 32	1.6 mm	32		SRAM		16777216 bit		PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
Mfr Part No GS816136DGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-165				GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT															Details			3.6 V	2.3 V			SyncBurst					Tray	GS816136DGD				Pipeline/Flow Through						Memory & Data Storage														18 Mbit			230 mA	6.5 ns		512 k x 36				SRAM						SRAM
Mfr Part No GS816132DD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816132DD-200I	200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT		524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31		No		3.6 V	2.3 V	2.5 V		SyncBurst					Tray	GS816132DD			3A991.B.2.B	Pipeline/Flow Through				FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2.7 V	INDUSTRIAL	2.3 V	18 Mbit		SYNCHRONOUS	230 mA	6.5 ns		512 k x 32	1.4 mm	32		SRAM		16777216 bit		PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm

Memory (33)