The category is 'Memory'

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  • Supply Current-Max:

    230 mA

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Factory Lead Time

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Factory Pack QuantityFactory Pack Quantity

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Manufacturer Part Number

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Number of Words Code

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Operating Temperature-Min

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Subcategory

Technology

Terminal Position

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JESD-30 Code

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Operating Supply Voltage

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Supply Voltage-Min (Vsup)

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Access Time

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Product Category

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Radiation Hardening

GS816236DGB-200I

Mfr Part No

GS816236DGB-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

21

Parallel

GSI Technology

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS816236DGB

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

4

230 mA

6.5 ns

512 k x 36

19 b

SRAM

18 Mb

SRAM

No

GS8161Z32DD-200I

Mfr Part No

GS8161Z32DD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

36

GSI TECHNOLOGY

GSI Technology

GS8161Z32DD-200I

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.3

Compliant

No

3.6 V

2.3 V

2.5 V

NBT SRAM

Tray

GS8161Z32DD

3A991.B.2.B

NBT

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

230 mA

6.5 ns

512 k x 32

1.4 mm

32

19 b

SRAM

18 Mb

16777216 bit

PARALLEL

ZBT SRAM

SRAM

15 mm

13 mm

No

GS8161Z32DGD-200I

Mfr Part No

GS8161Z32DGD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

NBT SRAM

Tray

GS8161Z32DGD

NBT

85 °C

-40 °C

Memory & Data Storage

18 Mbit

4

230 mA

6.5 ns

512 k x 32

19 b

SRAM

18 Mb

SRAM

No

GS816132DGT-200I

Mfr Part No

GS816132DGT-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

NBT SRAM

Tray

GS816132DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA

6.5 ns

512 k x 32

SRAM

SRAM

GS8162Z36DGB-200I

Mfr Part No

GS8162Z36DGB-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS8162Z36DGB-200I

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.25

Details

Yes

3.6 V

2.3 V

2.5 V

NBT SRAM

Tray

GS8162Z36DGB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

SYNCHRONOUS

230 mA

6.5 ns

512 k x 36

1.99 mm

36

SRAM

18874368 bit

PARALLEL

ZBT SRAM

SRAM

22 mm

14 mm

GS816136DD-200I

Mfr Part No

GS816136DD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816136DD-200I

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.26

Compliant

No

3.6 V

2.3 V

2.5 V

SyncBurst

Bulk

GS816136DD

3A991.B.2.B

Pipeline/Flow Through

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

230 mA

6.5 ns

512 k x 36

1.4 mm

36

19 b

SRAM

18 Mb

18874368 bit

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

No

GS8640FZ36GT-7.5V

Mfr Part No

GS8640FZ36GT-7.5V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8640FZ36GT-7.5V

133.3 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

SMD/SMT

36 Bit

2097152 words

2000000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.5

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8640FZ36GT

e3

Yes

3A991.B.2.B

NBT

Matte Tin (Sn)

FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

COMMERCIAL

1.7 V

72 Mbit

SYNCHRONOUS

230 mA

7.5

2 M x 36

1.6 mm

36

SRAM

72

Commercial

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

GS8640FZ18GT-6.5

Mfr Part No

GS8640FZ18GT-6.5

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI TECHNOLOGY

Parallel

GSI Technology

GS8640FZ18GT-6.5

153.8 MHz

3.6 V

+ 70 C

3 V

0 C

3

SMD/SMT

18 Bit

4194304 words

4000000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.38

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

3.3000 V

Commercial grade

0 to 70 °C

e3

Yes

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.75 V

COMMERCIAL

2.25 V

72 Mbit

SYNCHRONOUS

230 mA

6.5

4 M x 18

1.6 mm

18

72

Commercial

PARALLEL

ZBT SRAM

20 mm

14 mm

GS8640FZ18GT-6.5V

Mfr Part No

GS8640FZ18GT-6.5V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8640FZ18GT-6.5V

153.8 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

4 MWords

4000000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.38

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8640FZ18GT

e3

Yes

3A991.B.2.B

NBT

Matte Tin (Sn)

FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

COMMERCIAL

1.7 V

72 Mbit

2

SYNCHRONOUS

230 mA

6.5 ns

Flow-Through

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

GS8640FZ36GT-7.5

Mfr Part No

GS8640FZ36GT-7.5

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8640FZ36GT-7.5

133.3 MHz

3.6 V

+ 70 C

SDR

3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.36

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

3.3000 V

Commercial grade

0 to 70 °C

Tray

GS8640FZ36GT

e3

Yes

3A991.B.2.B

NBT Flow Through

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

3.3 V

2.75 V

COMMERCIAL

2.25 V

72 Mbit

4

SYNCHRONOUS

230 mA

7.5 ns

Flow-Through

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

No

GS816032DGT-200IV

Mfr Part No

GS816032DGT-200IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS816032DGT-200IV

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

4.85

Details

Yes

TQFP

3.6 V

2.3 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS816032DGT

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2 V

INDUSTRIAL

1.7 V

18 Mbit

4

SYNCHRONOUS

230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 32

1.6 mm

32

20 Bit

SRAM

18 Mbit

16777216 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

GS8161Z36DD-200I

Mfr Part No

GS8161Z36DD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z36DD-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

1.83

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Bulk

GS8161Z36DD

3A991.B.2.B

NBT

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

15 mm

13 mm

No

GS816236DB-200I

Mfr Part No

GS816236DB-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

Parallel

200 MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

SMD/SMT

36 Bit

Compliant

FBGA

3.6 V

2.3 V

Synchronous

2.5, 3.3 V

-40 to 100 °C

Bulk

GS816236DB

100 °C

-40 °C

119

18 Mbit

4

230 mA

6.5@Flow-Through/3@P

512 k x 36

19 b

18 Mb

18

No