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The category is 'Memory'

Memory (18)

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Manufacturer
Maximum Clock Frequency
Maximum Operating Supply Voltage
Maximum Operating Temperature
Memory Size
Memory Types
Minimum Operating Supply Voltage
Minimum Operating Temperature
Mounting Styles
Number of Words
Supply Current-Max

Supply Current-Max:
240 mA, 290 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Memory Organization	Length	Width	Radiation Hardening
	Mfr Part No GS8642Z36B-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-119						GSI Technology		SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords																		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8642Z36B				NBT Pipeline/Flow Through						Memory & Data Storage									119							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36					21 Bit	SRAM	72 Mbit			Industrial					SRAM
	Mfr Part No GS8642Z36GB-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	Surface Mount	119-BGA	YES	119-FPBGA (22x14)	119	8 ns	GS8642Z			SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8642Z36GB-167IV	167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	Volatile	GSI Technology Inc.	1.7, 2.3 V	- 40 C		3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	85 °C	-40 °C	Tray	PLASTIC/EPOXY	BGA	BGA,		RECTANGULAR	GRID ARRAY	Active	BGA	Active	NOT SPECIFIED	4.64		Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous		1.8, 2.5 V	Industrial grade	-40 to 85 °C		-	e1	Yes	3A991.B.2.B		Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41		SRAM - Synchronous, ZBT	1.7V ~ 2V, 2.3V ~ 2.7V	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V		INDUSTRIAL	1.7 V	72Mbit	4	SYNCHRONOUS	167 MHz	240 mA, 290 mA	8 ns	SRAM	Parallel	Flow-Through/Pipelined	2 M x 36		1.99 mm	36	-	21 Bit		72 Mbit		75497472 bit	Industrial	PARALLEL		ZBT SRAM			2M x 36	22 mm	14 mm
	Mfr Part No GS864032GT-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	18		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	2 MWords																Compliant		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864032GT				Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage									100							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 32					21 Bit	SRAM	64 Mbit			Industrial					SRAM				No
	Mfr Part No GS864036GT-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		9 Weeks, 4 Days		TQFP-100	YES		100	8 ns		GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS864036GT-167I	167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	1.76	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864036GT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V		INDUSTRIAL	2.3 V	72 Mbit	4	SYNCHRONOUS		240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36		1.6 mm	36		21 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		CACHE SRAM		SRAM		20 mm	14 mm
	Mfr Part No GS8642Z36GB-167	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-119						GSI Technology		SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords																Details		FBGA	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8642Z36GB				NBT Pipeline/Flow Through						Memory & Data Storage									119							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36					21 Bit	SRAM	72 Mbit			Commercial					SRAM
	Mfr Part No GS8640E32GT-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	18		Parallel	GSI Technology		167 MHz		2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	2 MWords																Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E32GT				Pipeline/Flow Through						Memory & Data Storage									100							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 32					21 Bit	SRAM	64 Mbit			Industrial					SRAM
	Mfr Part No GS864236B-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-119						GSI Technology		SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords																		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864236B				SCD/DCD Pipeline/Flow Through						Memory & Data Storage									119							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36					21 Bit	SRAM	72 Mbit			Industrial					SRAM
	Mfr Part No GS864036GT-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	Surface Mount	TQFP-100	YES	100-TQFP (20x14)	100	8 ns	GS864036	GSI Technology			18	GSI TECHNOLOGY	Parallel	GSI Technology	GS864036GT-167IV	167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	GSI Technology Inc.	1.7, 2.3 V	- 40 C	Yes	3		SMD/SMT	36 Bit	2097152 words	2000000	85 °C	-40 °C	Tray	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	Active	NOT SPECIFIED	4.9	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V		SyncBurst	1.8, 2.5 V		-40 to 85 °C	Tray	GS864036GT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	SRAM - Synchronous, Standard	1.7V ~ 2V, 2.3V ~ 2.7V	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		INDUSTRIAL	1.7 V	72 Mbit		SYNCHRONOUS	167 MHz	240 mA, 290 mA	8@Flow-Through/3.5@P	SRAM	Parallel		2 M x 36		1.6 mm	36	-		SRAM			72		PARALLEL		CACHE SRAM		SRAM	2M x 36	20 mm	14 mm
	Mfr Part No GS8640E32GT-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	18		Parallel	GSI Technology		167 MHz		2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	2 MWords																Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E32GT				DCD						Memory & Data Storage									100							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 32						SRAM	64 Mbit			Industrial					SRAM
	Mfr Part No GS864236GB-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-119						GSI Technology		SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords																Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864236GB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage									119							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36					21 Bit	SRAM	72 Mbit			Industrial					SRAM
	Mfr Part No GS864236B-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-119						GSI Technology		SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords																		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS864236B				SCD/DCD Pipeline/Flow Through						Memory & Data Storage									119							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36					21 Bit	SRAM	72 Mbit			Industrial					SRAM
	Mfr Part No GS8640Z36GT-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		TQFP-100	YES		100	8 ns		GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8640Z36GT-167I	167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.36	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8640Z36GT	e3	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V		INDUSTRIAL	2.3 V	72 Mbit	4	SYNCHRONOUS		240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36		1.6 mm	36		21 Bit	SRAM	72 Mb		75497472 bit	Industrial	PARALLEL		ZBT SRAM		SRAM		20 mm	14 mm
	Mfr Part No GS8640E36GT-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	18		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords																Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E36GT				Pipeline/Flow Through						Memory & Data Storage									100							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36					21 Bit	SRAM	72 Mbit			Industrial					SRAM
	Mfr Part No GS8642Z36B-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		BGA-119	YES		119	8 ns		GSI Technology	167 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8642Z36B-167I	167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	85 °C	-40 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.18	Compliant	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8642Z36B	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	72 Mbit	4	SYNCHRONOUS		240 mA, 290 mA				Flow-Through/Pipelined	2 M x 36	3-STATE	1.99 mm	36		21 Bit	SRAM	72 Mbit	0.12 A	75497472 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM		22 mm	14 mm	No
	Mfr Part No GS864236GB-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-119						GSI Technology		SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords																Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS864236GB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage									119							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36					21 Bit	SRAM	72 Mbit			Industrial					SRAM
	Mfr Part No GS8642Z36GB-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		BGA-119	YES		119	8 ns		GSI Technology	167 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8642Z36GB-167I	167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	85 °C	-40 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.18	Compliant	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8642Z36GB	e1	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	72 Mbit	4	SYNCHRONOUS		240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36	3-STATE	1.99 mm	36		21 Bit	SRAM	72 Mbit	0.12 A	75497472 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM		22 mm	14 mm	No
	Mfr Part No GS8640E36GT-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	18		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords																Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E36GT				DCD		85 °C	-40 °C			Memory & Data Storage									100							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 36					21 Bit	SRAM	72 Mbit			Industrial					SRAM				No
	Mfr Part No GS864032GT-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	18		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	2 MWords																Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS864032GT				Synchronous Burst						Memory & Data Storage									100							72 Mbit	4			240 mA, 290 mA	8 ns			Flow-Through/Pipelined	2 M x 32					21 Bit	SRAM	64 Mbit			Industrial					SRAM