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Memory (30)

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Maximum Clock Frequency
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Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min

Supply Current-Max:
250 mA, 270 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	ECCN Code	Type	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Organization	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Memory Organization	Length	Width	Radiation Hardening
Mfr Part No GS8161E32DGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100						GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 85 C	SDR			- 40 C	Yes		SMD/SMT																	Details			3.6 V	2.3 V			NBT SRAM				Tray	GS8161E32DGT		DCD Pipeline/Flow Through					Memory & Data Storage															18 Mbit				250 mA, 270 mA	5.5 ns				512 k x 32					SRAM						SRAM
Mfr Part No GS816032DGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		TQFP-100	YES		100	5.5 ns			SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS816032DGT-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C			1.7, 2.3 V	- 40 C		Surface Mount	SMD/SMT	32 Bit	512 kWords	512000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.34		Yes	TQFP	3.6 V	2.3 V	1.8 V	Synchronous		1.8, 2.5 V	Industrial grade	-40 to 100 °C		GS816032DGT	3A991.B.2.B				ALSO OPERATES AT 2.5V	8542.32.00.41		CMOS		QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2 V	INDUSTRIAL	1.7 V	18 Mbit	4	SYNCHRONOUS		250 mA, 270 mA	5.5 ns			Flow-Through/Pipelined	512 k x 32	1.6 mm	32		20 Bit		18 Mbit	16777216 bit	Industrial	PARALLEL	CACHE SRAM			20 mm	14 mm
Mfr Part No GS8161E32DD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165						GSI Technology		36			GSI Technology		250 MHz			+ 85 C	SDR			- 40 C	Yes		SMD/SMT																				3.6 V	2.3 V			SyncBurst				Tray	GS8161E32DD		DCD Pipeline/Flow Through					Memory & Data Storage															18 Mbit				250 mA, 270 mA	5.5 ns				512 k x 32					SRAM						SRAM
Mfr Part No GS8161Z36DGD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-165	YES		165	5.5 ns		GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z36DGD-250I	250 MHz			+ 85 C	SDR			- 40 C	Yes		SMD/SMT		524288 words	512000	85 °C	-40 °C		PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.26	Details	Yes		3.6 V	2.3 V	2.5 V		NBT SRAM				Tray	GS8161Z36DGD	3A991.B.2.B	NBT			FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2.7 V	INDUSTRIAL	2.3 V	18 Mbit		SYNCHRONOUS		250 mA, 270 mA	5.5 ns				512 k x 36	1.4 mm	36			SRAM		18874368 bit		PARALLEL	ZBT SRAM	SRAM		15 mm	13 mm
Mfr Part No GS8160E36DGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100						GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 100 C	SDR			- 40 C	Yes		SMD/SMT																	Details			3.6 V	2.3 V			SyncBurst				Tray	GS8160E36DGT		Pipeline/Flow Through					Memory & Data Storage															18 Mbit				250 mA, 270 mA	5.5 ns				512 k x 36					SRAM						SRAM
Mfr Part No GS8161E36DGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		TQFP-100	YES		100	4 ns		GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161E36DGT-250I	250 MHz			+ 85 C	SDR			- 40 C	Yes		SMD/SMT		524288 words	512000	85 °C	-40 °C		UNSPECIFIED	QFP	QFP,	RECTANGULAR	FLATPACK	Active	QFP		NOT SPECIFIED	5.35	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS8161E36DGT	3A991.B.2.B	DCD Pipeline/Flow Through			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	NOT SPECIFIED	1		compliant	100	R-XQFP-G100	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	18 Mbit		SYNCHRONOUS		250 mA, 270 mA	5.5 ns				512 k x 36		36			SRAM		18874368 bit		PARALLEL	CACHE SRAM	SRAM
Mfr Part No GS8160E32DGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100						GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 100 C	SDR			- 40 C	Yes		SMD/SMT																	Details			3.6 V	2.3 V			SyncBurst				Tray	GS8160E32DGT		Pipeline/Flow Through					Memory & Data Storage															18 Mbit				250 mA, 270 mA	5.5 ns				512 k x 32					SRAM						SRAM
Mfr Part No GS816032DGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100						GSI Technology		36		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes		SMD/SMT	32 Bit																Details			3.6 V	2.3 V			SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS816032DGT		Pipeline/Flow Through					Memory & Data Storage									100						18 Mbit				250 mA, 270 mA	5.5@Flow-Through/2.5				512 k x 32					SRAM		18	Industrial			SRAM
Mfr Part No GS8161Z36DGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		TQFP-100	YES		100	5.5 ns		GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z36DGT-250I	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	1.64	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8161Z36DGT	3A991.B.2.B	NBT			ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS		250 mA, 270 mA	5.5 ns			Flow-Through/Pipelined	512 k x 36	1.6 mm	36		19 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	ZBT SRAM	SRAM		20 mm	14 mm
Mfr Part No GS816236DGD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount	BGA-165		165-FPBGA (15x13)			GS816236	GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 85 C	SDR	GSI Technology Inc.		- 40 C	Yes		SMD/SMT						Tray								Active			Details			3.6 V	2.3 V			SyncBurst			-40°C ~ 100°C (TJ)	Tray	GS816236DGD		Pipeline/Flow Through					Memory & Data Storage	SRAM - Synchronous, Standard	2.3V ~ 2.7V, 3V ~ 3.6V													18 Mbit			250 MHz	250 mA, 270 mA	5.5 ns	SRAM	Parallel		512 k x 36			-		SRAM						SRAM	512K x 36
Mfr Part No GS8160Z36DGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	12 Weeks	Surface Mount	TQFP-100	YES	100-TQFP (20x14)	100	5.5 ns	GS8160Z36	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160Z36DGT-250I	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 100 C	SDR	GSI Technology Inc.	2.3, 3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	1000000	85 °C	-40 °C	Tray	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	Active	NOT SPECIFIED	1.73	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8160Z36DGT	3A991.B.2.B	NBT Pipeline/Flow Through			PIPELINE ARCHITECTURE, FLOW-THROUGH, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	SRAM - Synchronous, ZBT	2.3V ~ 2.7V, 3V ~ 3.6V	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	250 MHz	250 mA, 270 mA	5.5 ns	SRAM	Parallel	Flow-Through/Pipelined	512 k x 36	1.6 mm	18	-	19 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	ZBT SRAM	SRAM	512K x 36	20 mm	14 mm
Mfr Part No GS816236DD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165						GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 85 C	SDR			- 40 C	Yes		SMD/SMT																	Compliant			3.6 V	2.3 V			SyncBurst				Bulk	GS816236DD		Pipeline/Flow Through	100 °C	-40 °C			Memory & Data Storage															18 Mbit	4			250 mA, 270 mA	5.5 ns				512 k x 36				19 b	SRAM	18 Mb					SRAM				No
Mfr Part No GS8162Z36DGB-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-119	YES		119	5.5 ns		GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DGB-250I	250 MHz			+ 85 C	SDR			- 40 C	Yes		SMD/SMT		524288 words	512000	85 °C	-40 °C		PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.25	Details	Yes		3.6 V	2.3 V	2.5 V		NBT SRAM				Tray	GS8162Z36DGB	3A991.B.2.B	NBT Pipeline/Flow Through	100 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS		250 mA, 270 mA	5.5 ns				512 k x 36	1.99 mm	36		19 b	SRAM	18 Mb	18874368 bit		PARALLEL	ZBT SRAM	SRAM		22 mm	14 mm	No
Mfr Part No GS816236DGB-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-119	YES		119	5.5 ns		GSI Technology		21	GSI TECHNOLOGY	Parallel	GSI Technology	GS816236DGB-250I	250 MHz			+ 85 C	SDR			- 40 C	Yes		SMD/SMT		524288 words	512000	85 °C	-40 °C		PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	4.77	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS816236DGB	3A991.B.2.B	Pipeline/Flow Through			ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119		2.7 V	INDUSTRIAL	2.3 V	18 Mbit		SYNCHRONOUS		250 mA, 270 mA	5.5 ns				512 k x 36	1.99 mm	36			SRAM		18874368 bit		PARALLEL	CACHE SRAM	SRAM		22 mm	14 mm
Mfr Part No GS8161E36DD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165						GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 85 C	SDR			- 40 C	Yes		SMD/SMT																	Compliant			3.6 V	2.3 V			SyncBurst				Bulk	GS8161E36DD		DCD Pipeline/Flow Through	85 °C	-40 °C			Memory & Data Storage															18 Mbit	4			250 mA, 270 mA	5.5 ns				512 k x 36				19 b	SRAM	18 Mb					SRAM				No
Mfr Part No GS816132DD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		BGA-165	YES		165	5.5 ns		GSI Technology		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816132DD-250I	250 MHz			+ 85 C	SDR			- 40 C	Yes		SMD/SMT		524288 words	512000	85 °C	-40 °C		PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.31	Compliant	No		3.6 V	2.3 V	2.5 V		SyncBurst				Bulk	GS816132DD	3A991.B.2.B	Pipeline/Flow Through	85 °C	-40 °C	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS		250 mA, 270 mA	5.5 ns				512 k x 32	1.4 mm	32		19 b	SRAM	18 Mb	16777216 bit		PARALLEL	CACHE SRAM	SRAM		15 mm	13 mm	No
Mfr Part No GS8161E32DGD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165						GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 85 C	SDR			- 40 C	Yes		SMD/SMT																	Compliant			3.6 V	2.3 V			SyncBurst				Bulk	GS8161E32DGD		DCD Pipeline/Flow Through	85 °C	-40 °C			Memory & Data Storage															18 Mbit	4			250 mA, 270 mA	5.5 ns				512 k x 32				19 b	SRAM	18 Mb					SRAM				No
Mfr Part No GS816036DGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks		TQFP-100	YES		100	5.5 ns		GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS816036DGT-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 100 C	SDR		1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.34	Details	Yes	TQFP	3.6 V	2.3 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS816036DGT	3A991.B.2.B	Pipeline/Flow Through			ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2 V	INDUSTRIAL	1.7 V	18 Mbit	4	SYNCHRONOUS		250 mA, 270 mA	5.5 ns			Flow-Through/Pipelined	512 k x 36	1.6 mm	36		20 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	CACHE SRAM	SRAM		20 mm	14 mm
Mfr Part No GS8162Z36DGD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	Surface Mount	165-LBGA	YES	165-FPBGA (15x13)	165	5.5 ns	GS8162Z36				GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DGD-250I	250 MHz			+ 85 C	Volatile	GSI Technology Inc.		- 40 C			SMD/SMT		524288 words	512000	85 °C	-40 °C	Tray	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	Active	NOT SPECIFIED	5.25		Yes		3.6 V	2.3 V	2.5 V					-40°C ~ 100°C (TJ)		-	3A991.B.2.B				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41		SRAM - Synchronous, ZBT	2.3V ~ 2.7V, 3V ~ 3.6V	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	18Mbit		SYNCHRONOUS	250 MHz	250 mA, 270 mA	5.5 ns	SRAM	Parallel		512 k x 36	1.4 mm	36	-				18874368 bit		PARALLEL	ZBT SRAM		512K x 36	15 mm	13 mm
Mfr Part No GS816036DGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	Surface Mount	TQFP-100	YES	100-TQFP (20x14)	100	5.5 ns	GS816036	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816036DGT-250I	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 100 C	SDR	GSI Technology Inc.	2.3, 3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords/kB	512000	85 °C	-40 °C	Tray	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	Active	NOT SPECIFIED	1.74	Details	Yes		3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS816036DGT	3A991.B.2.B	Pipeline/Flow Through			FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	SRAM - Synchronous, Standard	2.3V ~ 2.7V, 3V ~ 3.6V	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2.7 V	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	250 MHz	250 mA, 270 mA	5.5 ns	SRAM	Parallel	Flow-Through/Pipelined	512 k x 36	1.6 mm	36	-	20 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	512K x 36	20 mm	14 mm

Memory (30)