The category is 'Memory'
Memory (23)
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- Access Time
- Interface Type
- Maximum Clock Frequency
- Maximum Operating Supply Voltage
- Maximum Operating Temperature
- Memory Size
- Minimum Operating Supply Voltage
- Minimum Operating Temperature
- Mounting Styles
- Number of I/O Lines
- Operating Temperature
- Supply Current-Max
- Supply Current-Max:
250 mA, 305 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Unit Weight | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Memory Organization | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS8322Z36AD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 3 Weeks | BGA-165 | YES | 165 | 5.5 ns | GSI Technology | 250 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.12 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8322Z36AD | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||
![]() | Mfr Part No GS8321Z32AD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z32AD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | 1000000 | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.3 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8321Z32AD | e0 | No | 3A991.B.2.B | NBT | Tin/Lead (Sn/Pb) | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 32 | 1.4 mm | 32 | 20 Bit | SRAM | 36 Mbit | 33554432 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832236AGB-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 14 | Parallel | GSI Technology | 250 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832236AGB | Pipeline/Flow Through | Memory & Data Storage | 119 | 36 Mbit | 4 | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | SRAM | 36 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z36AGD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 14 | Parallel | GSI Technology | 250 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8322Z36AGD | NBT Pipeline/Flow Through | Memory & Data Storage | 165 | 36 Mbit | 4 | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | SRAM | 36 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832236AGD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832236AGD | Pipeline/Flow Through | Memory & Data Storage | 165 | 36 Mbit | 4 | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 20 Bit | SRAM | 36 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8321Z36AD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 5.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z36AD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 4.78 | N | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | 0.286216 oz | Industrial grade | -40 to 100 °C | Tray | GS8321Z36AD | e0 | No | 3A991.B.2.B | NBT | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 37748736 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||
![]() | Mfr Part No GS832136AGD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | Surface Mount | BGA-165 | YES | 165-FPBGA (15x13) | 165 | 5.5 ns | GS832136 | GSI Technology | 250 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832136AGD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | GSI Technology Inc. | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | NOT SPECIFIED | 5.16 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832136AGD | 3A991.B.2.B | Pipeline/Flow Through | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | SRAM - Synchronous, Standard | 2.3V ~ 2.7V, 3V ~ 3.6V | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 MHz | 250 mA, 305 mA | 5.5 ns | SRAM | Parallel | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | - | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 1M x 36 | 15 mm | 13 mm | ||||||||||
![]() | Mfr Part No GS832136AD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 5.5 ns | GSI Technology | 250 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832136AD-250I | 250 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.16 | Compliant | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Bulk | GS832136AD | 3A991.B.2.B | Pipeline/Flow Through | 100 °C | -40 °C | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 b | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | No | ||||||||||||||||||||||
![]() | Mfr Part No GS8320E36AGT-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Tray | GS8320E36AGT | Pipeline/Flow Through | Memory & Data Storage | 100 | 36 Mbit | 4 | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 20 Bit | SRAM | 36 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8321E32AD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | Compliant | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Bulk | GS8321E32AD | DCD Pipeline/Flow Through | 100 °C | -40 °C | Memory & Data Storage | 165 | 36 Mbit | 4 | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 32 | 20 Bit | SRAM | 36 Mbit | Industrial | SRAM | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8320E32AGT-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 9 Weeks, 6 Days | TQFP-100 | YES | 100 | 5.5 ns | GSI Technology | 250 MHz | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8320E32AGT-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | SMD/SMT | 32 Bit | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 1.79 | Compliant | Yes | SRAM 2.5 or 3.3V 1M x 32 32M | TQFP | 3.6 V | 2.3 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Bulk | GS8320E32AGT | 3A991.B.2.B | Pipeline/Flow Through | 100 °C | -40 °C | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | 2.5/3.3 V | INDUSTRIAL | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 250 mA, 305 mA | 5.5@Flow-Through/3@P | 1 M x 32 | 3-STATE | 1.6 mm | 32 | 20 b | SRAM | 36 Mb | 0.04 A | 36 | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | No | |||||||||||||||||||||
![]() | Mfr Part No GS832236AB-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 5.5 ns | 250 MHz | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AB-250I | 250 MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | - 40 C | SMD/SMT | 36 Bit | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | -40 to 100 °C | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | SYNCHRONOUS | 250 mA, 305 mA | 5.5@Flow-Through/2.5 | 1 M x 36 | 3-STATE | 1.99 mm | 36 | 0.04 A | 36 | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 22 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832132AGD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 5.5 ns | GSI Technology | 250 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832132AGD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.16 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832132AGD | 3A991.B.2.B | Pipeline/Flow Through | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 32 | 3-STATE | 1.4 mm | 32 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 33554432 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||
![]() | Mfr Part No GS8321Z36AGD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | Surface Mount | BGA-165 | YES | 165-FPBGA (15x13) | 165 | GS8321Z | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z36AGD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | GSI Technology Inc. | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | Tray | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | NOT SPECIFIED | 4.61 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8321Z36AGD | e1 | Yes | 3A991.B.2.B | NBT | Tin/Silver/Copper (Sn/Ag/Cu) | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | Memory & Data Storage | SRAM - Synchronous, ZBT | 2.3V ~ 2.7V, 3V ~ 3.6V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 MHz | 250 mA, 305 mA | 5.5 ns | SRAM | Parallel | Flow-Through/Pipelined | 1 M x 36 | 1.4 mm | 36 | - | 20 Bit | SRAM | 36 Mbit | 37748736 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 1M x 36 | 15 mm | 13 mm | ||||||||||||||||||
![]() | Mfr Part No GS832236AD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832236AD | Pipeline/Flow Through | Memory & Data Storage | 165 | 36 Mbit | 4 | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 20 Bit | SRAM | 36 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z36AGB-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | SDR | Parallel | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | - 40 C | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | FBGA | 3.6 V | 2.3 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | GS8322Z36AGB | 119 | 36 Mbit | 4 | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 20 Bit | 36 Mbit | Industrial | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z36AB-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 5.5 ns | GSI Technology | 250 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AB-250I | 250 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.11 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8322Z36AB | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||||||||||||||||||||||
![]() | Mfr Part No GS8321E32AGD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8321E32AGD | DCD Pipeline/Flow Through | Memory & Data Storage | 165 | 36 Mbit | 4 | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 32 | 20 Bit | SRAM | 36 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832132AD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 5.5 ns | GSI Technology | 250 MHz | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832132AD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | SMD/SMT | 32 Bit | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.16 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | -40 to 100 °C | Tray | GS832132AD | 3A991.B.2.B | Pipeline/Flow Through | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | SYNCHRONOUS | 250 mA, 305 mA | 5.5@Flow-Through/2.5 | 1 M x 32 | 3-STATE | 1.4 mm | 32 | SRAM | 0.04 A | 36 | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832032AGT-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832032AGT | Pipeline/Flow Through | 100 °C | -40 °C | Memory & Data Storage | 100 | 36 Mbit | 4 | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 32 | 20 Bit | SRAM | 36 Mbit | Industrial | SRAM | No |
GS8322Z36AD-250I
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