The category is 'Memory'
Memory (17)
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- Access Time
- Interface Type
- Maximum Clock Frequency
- Maximum Operating Supply Voltage
- Maximum Operating Temperature
- Memory Size
- Minimum Operating Supply Voltage
- Minimum Operating Temperature
- Mounting Styles
- Number of I/O Lines
- Organization
- Supply Current-Max
- Supply Current-Max:
250 mA, 330 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Memory Density | Screening Level | Parallel/Serial | Memory IC Type | Product Category | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS864036GT-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864036GT-200I | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.37 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS864036GT | e3 | Yes | 3A991.B.2.B | Pipeline/Flow Through | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 72 Mbit | 4 | SYNCHRONOUS | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 1.6 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | ||||
![]() | Mfr Part No GS864032GT-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | SDR | Parallel | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | 1.7, 2.3 V | - 40 C | Surface Mount | SMD/SMT | 32 Bit | 2 MWords | TQFP | 2.7 V | 1.7 V | Synchronous | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | GS864032GT | 100 | 72 Mbit | 4 | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 32 | 21 Bit | 64 Mbit | Industrial | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8640E32GT-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 2 MWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8640E32GT | Pipeline/Flow Through | Memory & Data Storage | 100 | 72 Mbit | 4 | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 32 | 21 Bit | SRAM | 64 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS864236GB-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | 14 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | SMD/SMT | 36 Bit | Details | FBGA | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | -40 to 85 °C | Tray | GS864236GB | SCD/DCD Pipeline/Flow Through | Memory & Data Storage | 119 | 72 Mbit | 250 mA, 330 mA | 7.5@Flow-Through/3@P | 2 M x 36 | SRAM | 72 | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8640E32GT-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 2 MWords | Details | TQFP | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8640E32GT | DCD | Memory & Data Storage | 100 | 72 Mbit | 4 | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 32 | 21 Bit | SRAM | 64 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8642Z36B-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | SDR | Parallel | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | - 40 C | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | FBGA | 3.6 V | 2.3 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | 119 | 72 Mbit | 4 | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | 72 Mbit | Industrial | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8642Z36B-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8642Z36B-200IV | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 4.78 | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8642Z36B | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 72 Mbit | 4 | SYNCHRONOUS | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 1.99 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 22 mm | 14 mm | ||||||
![]() | Mfr Part No GS864236B-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 14 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS864236B | SCD/DCD Pipeline/Flow Through | Memory & Data Storage | 119 | 72 Mbit | 4 | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | SRAM | 72 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS864032GT-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 2 MWords | Compliant | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS864032GT | Pipeline/Flow Through | 85 °C | -40 °C | Memory & Data Storage | 100 | 72 Mbit | 4 | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 32 | 21 Bit | SRAM | 64 Mbit | Industrial | SRAM | No | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS864036GT-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864036GT-200IV | 200 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.37 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS864036GT | e3 | Yes | 3A991.B.2.B | Synchronous Burst | Matte Tin (Sn) | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 72 Mbit | 4 | SYNCHRONOUS | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 1.6 mm | 36 | 21 b | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | No | ||
![]() | Mfr Part No GS8640Z36GT-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8640Z36GT-200IV | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.36 | Compliant | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8640Z36GT | e3 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | Matte Tin (Sn) | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 72 Mbit | 4 | SYNCHRONOUS | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 1.6 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 20 mm | 14 mm | No | |
![]() | Mfr Part No GS864236B-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 14 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | FBGA | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS864236B | SCD/DCD Pipeline/Flow Through | Memory & Data Storage | 119 | 72 Mbit | 4 | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | SRAM | 72 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8640Z36GT-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8640Z36GT-200I | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | - 40 C | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.35 | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | GS8640Z36GT | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 72 Mbit | 4 | SYNCHRONOUS | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2MX36 | 1.6 mm | 36 | 21 Bit | 72 Mbit | 75497472 bit | Industrial | PARALLEL | ZBT SRAM | 20 mm | 14 mm | |||||||||||||||
![]() | Mfr Part No GS8640E36GT-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | Details | TQFP | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8640E36GT | DCD | Memory & Data Storage | 100 | 72 Mbit | 4 | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | SRAM | 72 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8640E36GT-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8640E36GT | Pipeline/Flow Through | Memory & Data Storage | 100 | 72 Mbit | 4 | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | SRAM | 72 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8642Z36GB-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 14 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | Details | FBGA | 2.7 V | 1.7 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8642Z36GB | NBT Pipeline/Flow Through | 85 °C | -40 °C | Memory & Data Storage | 119 | 72 Mbit | 4 | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | SRAM | 72 Mbit | Industrial | SRAM | No | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS864236GB-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864236GB-200I | 200 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.18 | Compliant | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS864236GB | e1 | Yes | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 72 Mbit | 4 | SYNCHRONOUS | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 36 | 1.99 mm | 36 | 21 b | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | No |
GS864036GT-200I
GSI Technology
Package:Memory
Price: please inquire
GS864032GT-200IV
GSI Technology
Package:Memory
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GS8640E32GT-200I
GSI Technology
Package:Memory
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GS864236GB-200IV
GSI Technology
Package:Memory
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GS8640E32GT-200IV
GSI Technology
Package:Memory
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GS8642Z36B-200I
GSI Technology
Package:Memory
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GS8642Z36B-200IV
GSI Technology
Package:Memory
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GS864236B-200I
GSI Technology
Package:Memory
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GS864032GT-200I
GSI Technology
Package:Memory
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GS864036GT-200IV
GSI Technology
Package:Memory
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GS8640Z36GT-200IV
GSI Technology
Package:Memory
Price: please inquire
GS864236B-200IV
GSI Technology
Package:Memory
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GS8640Z36GT-200I
GSI Technology
Package:Memory
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GS8640E36GT-200IV
GSI Technology
Package:Memory
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GS8640E36GT-200I
GSI Technology
Package:Memory
Price: please inquire
GS8642Z36GB-200IV
GSI Technology
Package:Memory
Price: please inquire
GS864236GB-200I
GSI Technology
Package:Memory
Price: please inquire
