The category is 'Memory'
Memory (22)
- All Manufacturers
- Access Time
- Interface Type
- Maximum Clock Frequency
- Maximum Operating Supply Voltage
- Maximum Operating Temperature
- Memory Size
- Minimum Operating Supply Voltage
- Minimum Operating Temperature
- Mounting Styles
- Number of I/O Lines
- Organization
- Supply Current-Max
- Supply Current-Max:
250 mA, 335 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Unit Weight | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Memory Density | Screening Level | Parallel/Serial | Memory IC Type | Product Category | Memory Organization | Length | Width | Radiation Hardening |
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 | Mfr Part No GS864218GB-250IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864218GB-250IV | 250 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.17 | Compliant | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS864218GB | e1 | Yes | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 250 mA, 335 mA | 6.5 ns | Flow-Through/Pipelined | 4 M x 18 | 1.99 mm | 18 | 22 b | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | No | |||||||||||||||
| Mfr Part No GS8640Z18GT-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | Surface Mount | TQFP-100 | YES | 100-TQFP (20x14) | 100 | 6.5 ns | GS8640Z | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8640Z18GT-250I | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | GSI Technology Inc. | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | Active | NOT SPECIFIED | 4.89 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | 0.434810 oz | Industrial grade | -40 to 85 °C | Tray | GS8640Z18GT | e3 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | PURE MATTE TIN | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | SRAM - Synchronous, ZBT | 2.3V ~ 2.7V, 3V ~ 3.6V | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 72 Mbit | 2 | SYNCHRONOUS | 250 MHz | 250 mA, 335 mA | 6.5 ns | SRAM | Parallel | Flow-Through/Pipelined | 4 M x 18 | 1.6 mm | 18 | - | 22 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 4M x 18 | 20 mm | 14 mm | No |