The category is 'Memory'
Memory (20)
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- Interface Type
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- Minimum Operating Temperature
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- Operating Temperature
- Supply Current-Max
- Supply Current-Max:
255 mA, 335 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | ECCN Code | Type | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Memory Density | Screening Level | Parallel/Serial | Memory IC Type | Product Category | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS8162Z18DGB-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-119 | YES | 119 | 4 ns | GSI Technology | SDR | 21 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8162Z18DGB-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.27 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8162Z18DGB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | OTHER | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 1.99 mm | 18 | 20 Bit | SRAM | 18 Mbit | 18874368 bit | Commercial | PARALLEL | ZBT SRAM | SRAM | 22 mm | 14 mm | ||||
![]() | Mfr Part No GS816018DGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 4 ns | GSI Technology | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS816018DGT-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.32 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS816018DGT | 3A991.B.2.B | Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 1.6 mm | 8 | 21 Bit | SRAM | 18 Mbit | 8388608 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | |||||
![]() | Mfr Part No GS816118DD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | 36 | Parallel | GSI Technology | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | SMD/SMT | 18 Bit | N | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | 0 to 70 °C | Tray | GS816118DD | Pipeline/Flow Through | Memory & Data Storage | 165 | 18 Mbit | 255 mA, 335 mA | 4@Flow-Through/2.5@P | 1 M x 18 | SRAM | 18 | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8161E18DGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 4 ns | GSI Technology | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161E18DGT-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | UNSPECIFIED | QFP | QFP, | RECTANGULAR | FLATPACK | Active | QFP | NOT SPECIFIED | 5.42 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8161E18DGT | 3A991.B.2.B | DCD Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | compliant | 100 | R-XQFP-G100 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 18 | 20 Bit | SRAM | 18 Mbit | 18874368 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | ||||||||
![]() | Mfr Part No GS816118DGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 4 ns | GSI Technology | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS816118DGT-400 | 400 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, | RECTANGULAR | FLATPACK | Active | QFP | NOT SPECIFIED | 5.26 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS816118DGT | 3A991.B.2.B | Pipeline/Flow Through | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | compliant | 100 | R-PQFP-G100 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 18 | SRAM | 18 Mbit | 18874368 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | |||||||||||
![]() | Mfr Part No GS816218DD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | N | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS816218DD | Pipeline/Flow Through | Memory & Data Storage | 165 | 18 Mbit | 2 | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 20 Bit | SRAM | 18 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8162Z18DB-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 21 | Parallel | GSI Technology | 400 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | N | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8162Z18DB | NBT Pipeline/Flow Through | Memory & Data Storage | 119 | 18 Mbit | 2 | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | SRAM | 18 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS816218DB-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-119 | YES | 119 | 4 ns | GSI Technology | SDR | 21 | GSI TECHNOLOGY | Parallel | GSI Technology | GS816218DB-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.25 | N | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS816218DB | 3A991.B.2.B | Pipeline/Flow Through | ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 1.99 mm | 18 | 20 Bit | SRAM | 18 Mbit | 18874368 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | |||||
![]() | Mfr Part No GS816218DGB-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-119 | YES | 119 | 4 ns | GSI Technology | SDR | 21 | GSI TECHNOLOGY | Parallel | GSI Technology | GS816218DGB-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.25 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS816218DGB | 3A991.B.2.B | Pipeline/Flow Through | ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 1.99 mm | 18 | 20 Bit | SRAM | 18 Mbit | 18874368 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | |||||
![]() | Mfr Part No GS816118DGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS816118DGD | Pipeline/Flow Through | Memory & Data Storage | 165 | 18 Mbit | 2 | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 20 Bit | SRAM | 18 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8161E18DGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8161E18DGD | DCD Pipeline/Flow Through | 70 °C | 0 °C | Memory & Data Storage | 165 | 18 Mbit | 2 | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 20 Bit | SRAM | 18 Mbit | Commercial | SRAM | No | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS816218DGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS816218DGD | Pipeline/Flow Through | 85 °C | 0 °C | Memory & Data Storage | 165 | 18 Mbit | 2 | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 20 Bit | SRAM | 18 Mbit | Commercial | SRAM | No | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8161Z18DD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 4 ns | GSI Technology | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161Z18DD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.26 | N | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8161Z18DD | 3A991.B.2.B | NBT | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 1.4 mm | 18 | 20 Bit | SRAM | 18 Mbit | 18874368 bit | Commercial | PARALLEL | ZBT SRAM | SRAM | 15 mm | 13 mm | |||||
![]() | Mfr Part No GS8161E18DD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8161E18DD | DCD Pipeline/Flow Through | Memory & Data Storage | 165 | 18 Mbit | 2 | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 20 Bit | SRAM | 18 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8162Z18DD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 400 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | Compliant | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Bulk | GS8162Z18DD | NBT Pipeline/Flow Through | 85 °C | 0 °C | Memory & Data Storage | 165 | 18 Mbit | 2 | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 20 b | SRAM | 18 Mbit | Commercial | SRAM | No | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8161Z18DGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 4 ns | GSI Technology | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161Z18DGT-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.26 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8161Z18DGT | 3A991.B.2.B | NBT | ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 1.6 mm | 18 | 20 Bit | SRAM | 18 Mbit | 18874368 bit | Commercial | PARALLEL | ZBT SRAM | SRAM | 20 mm | 14 mm | |||||
![]() | Mfr Part No GS8162Z18DGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 400 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8162Z18DGD | NBT Pipeline/Flow Through | Memory & Data Storage | 165 | 18 Mbit | 2 | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | SRAM | 18 Mb | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8160E18DGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 4 ns | GSI Technology | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8160E18DGT-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.39 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8160E18DGT | 3A991.B.2.B | Pipeline/Flow Through | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 1.6 mm | 18 | 20 Bit | SRAM | 18 Mbit | 18874368 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | |||||
![]() | Mfr Part No GS8161Z18DGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8161Z18DGD | NBT | Memory & Data Storage | 165 | 18 Mbit | 2 | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 20 Bit | SRAM | 18 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8160Z18DGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 4 ns | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8160Z18DGT-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | 0 C | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.31 | Compliant | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Bulk | 3A991.B.2.B | 85 °C | 0 °C | PIPELINE ARCHITECTURE, FLOW-THROUGH, ALSO OPERATES AT 3.3V | 8542.32.00.41 | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 255 mA, 335 mA | 4 ns | Flow-Through/Pipelined | 1 M x 18 | 1.6 mm | 18 | 20 Bit | 18 Mbit | 18874368 bit | Commercial | PARALLEL | ZBT SRAM | 20 mm | 14 mm | No |
GS8162Z18DGB-400
GSI Technology
Package:Memory
Price: please inquire
GS816018DGT-400
GSI Technology
Package:Memory
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GS816118DD-400
GSI Technology
Package:Memory
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GS8161E18DGT-400
GSI Technology
Package:Memory
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GS816118DGT-400
GSI Technology
Package:Memory
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GS816218DD-400
GSI Technology
Package:Memory
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GS8162Z18DB-400
GSI Technology
Package:Memory
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GS816218DB-400
GSI Technology
Package:Memory
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GS816218DGB-400
GSI Technology
Package:Memory
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GS816118DGD-400
GSI Technology
Package:Memory
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GS8161E18DGD-400
GSI Technology
Package:Memory
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GS816218DGD-400
GSI Technology
Package:Memory
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GS8161Z18DD-400
GSI Technology
Package:Memory
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GS8161E18DD-400
GSI Technology
Package:Memory
Price: please inquire
GS8162Z18DD-400
GSI Technology
Package:Memory
Price: please inquire
GS8161Z18DGT-400
GSI Technology
Package:Memory
Price: please inquire
GS8162Z18DGD-400
GSI Technology
Package:Memory
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GS8160E18DGT-400
GSI Technology
Package:Memory
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GS8161Z18DGD-400
GSI Technology
Package:Memory
Price: please inquire
GS8160Z18DGT-400
GSI Technology
Package:Memory
Price: please inquire
