Shop the Latest Memory at Richard Electronics - Browse Our Product List Now

Sorry! No search result....

Sign In

Sorry! No search result....

The category is 'Memory'

Memory (18)

All Manufacturers
Access Time
Interface Type
Maximum Clock Frequency
Maximum Operating Temperature
Memory Size
Minimum Operating Temperature
Mounting Styles
Organization
Package / Case
Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min

Supply Current-Max:
255 mA, 360 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS864236B-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864236B-250V	250 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.18	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS864236B	e0	No	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	COMMERCIAL	1.7 V	72 Mbit	4	SYNCHRONOUS	255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36	1.99 mm	36	21 Bit	SRAM	72 Mbit	75497472 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS8642Z36GB-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology		14		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		0 C	Yes			SMD/SMT														Details			3.6 V	2.3 V			NBT SRAM				Tray	GS8642Z36GB				NBT Pipeline/Flow Through						Memory & Data Storage														72 Mbit			255 mA, 360 mA	6.5 ns		2 M x 36				SRAM		72				SRAM
	Mfr Part No GS8640E36GT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		18		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes			SMD/SMT	36 Bit													Details			2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		0 to 70 °C	Tray	GS8640E36GT				DCD						Memory & Data Storage								100						72 Mbit			255 mA, 360 mA	6.5@Flow-Through/3@P		2 M x 36				SRAM		72				SRAM
	Mfr Part No GS864032GT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS864032GT-250V	250 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS864032GT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	COMMERCIAL	1.7 V	72 Mbit	4	SYNCHRONOUS	255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 32	1.6 mm	32		SRAM	64 Mb	67108864 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
	Mfr Part No GS864236B-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		12 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology		14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864236B-250	250 MHz	153.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3		SMD/SMT	36 Bit	2097152 words	2000000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	4.76	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS864236B	e0	No	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	COMMERCIAL	2.3 V	72 Mbit		SYNCHRONOUS	255 mA, 360 mA	6.5@Flow-Through/2.5		2 M x 36	1.99 mm	36		SRAM		72	Commercial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS8640Z36GT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8640Z36GT-250	250 MHz	153.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.35	Compliant	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8640Z36GT	e3	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	PURE MATTE TIN	70 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	COMMERCIAL	2.3 V	72 Mbit	4	SYNCHRONOUS	255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36	1.6 mm	36	21 Bit	SRAM	72 Mbit	75497472 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	20 mm	14 mm	No
	Mfr Part No GS8642Z36B-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology	SDR	14		Parallel	GSI Technology		250 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords												N		FBGA	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8642Z36B				NBT Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								119						72 Mbit	4		255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36			21 b	SRAM	72 Mbit		Commercial			SRAM			No
	Mfr Part No GS864236GB-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119					SDR			Parallel			250 MHz		2.7, 3.6 V	+ 70 C		2.3, 3 V	0 C			Surface Mount	SMD/SMT	36 Bit	2 MWords												Compliant		FBGA	3.6 V	2.3 V		Synchronous		2.5, 3.3 V	Commercial grade	0 to 70 °C		GS864236GB						70 °C	0 °C											119						72 Mbit	4		255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36			21 b		72 Mb		Commercial						No
	Mfr Part No GS8640E32GT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8640E32GT-250V	250 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.45	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640E32GT	e3	Yes	3A991.B.2.B	DCD	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	COMMERCIAL	1.7 V	72 Mbit	4	SYNCHRONOUS	255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 32	1.6 mm	32		SRAM	64 Mbit	67108864 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
	Mfr Part No GS8642Z36GB-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8642Z36GB-250V	250 MHz	166.6@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.18	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8642Z36GB	e1	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	COMMERCIAL	1.7 V	72 Mbit	4	SYNCHRONOUS	255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36	1.99 mm	36	21 Bit	SRAM	72 Mbit	75497472 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS8640E36GT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		250 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords												Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640E36GT				Pipeline/Flow Through						Memory & Data Storage								100						72 Mbit	4		255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36				SRAM	72 Mbit		Commercial			SRAM
	Mfr Part No GS8642Z36B-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119								Parallel			250 MHz	166.6@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C		1.7, 2.3 V	0 C				SMD/SMT	36 Bit															FBGA	2.7 V	1.7 V				1.8, 2.5 V	Commercial grade	0 to 70 °C																				119						72 Mbit			255 mA, 360 mA	6.5@Flow-Through/3@P		2 M x 36						72	Commercial
	Mfr Part No GS8640E32GT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		250 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	2 MWords												Compliant		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640E32GT				Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								100						72 Mbit	4		255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 32			21 b	SRAM	64 Mbit		Commercial			SRAM			No
	Mfr Part No GS864236GB-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864236GB-250V	250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.18	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS864236GB	e1	Yes	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	COMMERCIAL	1.7 V	72 Mbit	4	SYNCHRONOUS	255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36	1.99 mm	36	21 Bit	SRAM	72 Mbit	75497472 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS864036GT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	2 MWords												Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS864036GT				Pipeline/Flow Through						Memory & Data Storage								100						72 Mbit	4		255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36			21 Bit	SRAM	72 Mbit		Commercial			SRAM
	Mfr Part No GS8640Z36GT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		6 Weeks, 6 Days	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8640Z36GT-250V	250 MHz	153@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.36	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640Z36GT	e3	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	COMMERCIAL	1.7 V	72 Mbit	4	SYNCHRONOUS	255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36	1.6 mm	36	21 Bit	SRAM	72 Mbit	75497472 bit	Commercial	PARALLEL	ZBT SRAM	SRAM	20 mm	14 mm
	Mfr Part No GS864032GT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	3.6 V	+ 70 C	SDR	3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	2 MWords												Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	3.3000 V	Commercial grade	0 to 70 °C	Tray	GS864032GT				Pipeline/Flow Through						Memory & Data Storage								100						72 Mbit	4		255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 32			21 Bit	SRAM	64 Mbit		Commercial			SRAM
	Mfr Part No GS864036GT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS864036GT-250V	250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.37	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS864036GT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)	70 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	COMMERCIAL	1.7 V	72 Mbit	4	SYNCHRONOUS	255 mA, 360 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36	1.6 mm	36	21 Bit	SRAM	72 Mbit	75497472 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm	No