The category is 'Memory'

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  • Access Time
  • Interface Type
  • Maximum Clock Frequency
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  • Minimum Operating Temperature
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  • Number of I/O Lines
  • Organization
  • Supply Current-Max
  • Supply Current-Max:

    260 mA, 305 mA

Image

Part Number

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Datasheet

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RoHS

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Supplier Device Package

Number of Terminals

Access Time-Max

Base Product Number

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Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

Manufacturer

Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

Mfr

Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

Package

Package Body Material

Package Code

Package Description

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Product Status

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

ECCN Code

Type

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Technology

Voltage - Supply

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Pin Count

JESD-30 Code

Supply Voltage-Max (Vsup)

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Clock Frequency

Supply Current-Max

Access Time

Memory Format

Memory Interface

Architecture

Organization

Seated Height-Max

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Product Type

Density

Memory Density

Screening Level

Parallel/Serial

Memory IC Type

Product Category

Memory Organization

Length

Width

Radiation Hardening

GS816218DGD-333I

Mfr Part No

GS816218DGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS816218DGD

Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E18DGT-333I

Mfr Part No

GS8161E18DGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 70 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS816218DB-333I

Mfr Part No

GS816218DB-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

21

Parallel

GSI Technology

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

GS816218DB

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

119

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 b

SRAM

18 Mbit

Industrial

SRAM

No

GS8162Z18DB-333I

Mfr Part No

GS8162Z18DB-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

21

Parallel

GSI Technology

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8162Z18DB

NBT Pipeline/Flow Through

Memory & Data Storage

119

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8162Z18DGB-333I

Mfr Part No

GS8162Z18DGB-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

21

Parallel

GSI Technology

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

SMD/SMT

18 Bit

Details

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8162Z18DGB

NBT Pipeline/Flow Through

Memory & Data Storage

119

18 Mbit

260 mA, 305 mA

4.5@Flow-Through/2.5

1 M x 18

SRAM

18

Industrial

SRAM

GS816218DGB-333I

Mfr Part No

GS816218DGB-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-119

YES

119

4.5 ns

GSI Technology

SDR

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS816218DGB-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.25

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS816218DGB

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

1.99 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

GS8160E18DGT-333I

Mfr Part No

GS8160E18DGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 100 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8160E18DGT

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

100

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

21 Bit

SRAM

18 Mbit

Industrial

SRAM

No

GS8161E18DGD-333I

Mfr Part No

GS8161E18DGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8161E18DGD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mbit

Industrial

SRAM

GS8161Z18DD-333I

Mfr Part No

GS8161Z18DD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

SMD/SMT

18 Bit

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

-40 to 85 °C

Tray

GS8161Z18DD

NBT

Memory & Data Storage

165

18 Mbit

260 mA, 305 mA

4.5@Flow-Through/2.5

1 M x 18

SRAM

18

SRAM

GS8161E18DD-333I

Mfr Part No

GS8161E18DD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

SMD/SMT

18 Bit

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

-40 to 85 °C

Tray

GS8161E18DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

260 mA, 305 mA

4.5@Flow-Through/2.5

1 M x 18

SRAM

18

SRAM

GS8161Z18DGT-333I

Mfr Part No

GS8161Z18DGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

4.5 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z18DGT-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.12

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8161Z18DGT

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

GS8160Z18DGT-333I

Mfr Part No

GS8160Z18DGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8160Z18DGT-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 100 C

SDR

2.3, 3 V

- 40 C

Yes

SMD/SMT

18 Bit

1 MWords

1000000

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

NOT SPECIFIED

5.31

Details

Yes

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8160Z18DGT

3A991.B.2.B

NBT Pipeline/Flow Through

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

R-PQFP-G100

2.7 V

2.3 V

18 Mbit

2

SYNCHRONOUS

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

No

GS816218DD-333I

Mfr Part No

GS816218DD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS816218DD

Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mbit

Industrial

SRAM

GS816118DGT-333I

Mfr Part No

GS816118DGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS816118DGT

Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS816118DD-333I

Mfr Part No

GS816118DD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS816118DD

Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS816018DGT-333IV

Mfr Part No

GS816018DGT-333IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS816018DGT-333IV

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 100 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.32

Compliant

Yes

TQFP

3.6 V

2.3 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Bulk

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2 V

INDUSTRIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

21 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

GS8162Z18DD-333I

Mfr Part No

GS8162Z18DD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

SDR

Parallel

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

Surface Mount

SMD/SMT

18 Bit

1 MWords

FBGA

3.6 V

2.3 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 100 °C

165

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Industrial

GS8162Z18DGD-333I

Mfr Part No

GS8162Z18DGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8162Z18DGD

NBT Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161Z18DGD-333I

Mfr Part No

GS8161Z18DGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

Surface Mount

BGA-165

165-FPBGA (13x15)

GS8161Z18

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Tray

Active

Details

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8161Z18DGD

NBT

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

165

18 Mbit

2

333 MHz

260 mA, 305 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 18

-

20 Bit

SRAM

18 Mbit

Industrial

SRAM

1M x 18

GS816118DGD-333I

Mfr Part No

GS816118DGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

Surface Mount

165-LBGA

165-FPBGA (13x15)

GS816118

SDR

Parallel

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

Volatile

GSI Technology Inc.

2.3, 3 V

- 40 C

Surface Mount

SMD/SMT

18 Bit

1 MWords

Tray

Active

Compliant

FBGA

3.6 V

2.3 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Bulk

-

85 °C

-40 °C

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

165

18Mbit

2

333 MHz

260 mA, 305 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 18

-

20 Bit

18 Mbit

Industrial

1M x 18

No