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The category is 'Memory'

Memory (56)

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Access Time
Interface Type
Maximum Clock Frequency
Maximum Operating Temperature
Memory Size
Minimum Operating Temperature
Mounting Styles
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Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min

Supply Current-Max:
260 mA, 315 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Memory Organization	Length	Width	Radiation Hardening
	Mfr Part No GS816136DGT-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords																Compliant		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Bulk	GS816136DGT				Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage									100							18 Mbit	4			260 mA, 315 mA	4.5 ns			Flow-Through/Pipelined	512 k x 36					19 Bit	SRAM	18 Mbit			Commercial					SRAM				No
	Mfr Part No GS832236AD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		BGA-165	YES		165	5.5 ns		GSI Technology	250 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AD-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.12		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS832236AD	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	36 Mbit	4	SYNCHRONOUS		260 mA, 315 mA	5.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36		20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM		15 mm	13 mm
	Mfr Part No GS8321E32AGD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-165						GSI Technology		SDR	18		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	32 Bit	1 MWords																Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS8321E32AGD				Synchronous Burst						Memory & Data Storage									165							36 Mbit	4			260 mA, 315 mA	5.5 ns			Flow-Through/Pipelined	1 M x 32					20 Bit	SRAM	36 Mbit			Industrial					SRAM
	Mfr Part No GS8161E36DD-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-165						GSI Technology		SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords																		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8161E36DD				DCD Pipeline/Flow Through						Memory & Data Storage									165							18 Mbit	4			260 mA, 315 mA	4.5 ns			Flow-Through/Pipelined	512 k x 36					19 Bit	SRAM	18 Mbit			Commercial					SRAM
	Mfr Part No GS8160Z36DGT-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords																Details		TQFP	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8160Z36DGT				NBT Pipeline/Flow Through						Memory & Data Storage									100							18 Mbit	4			260 mA, 315 mA	4.5 ns			Flow-Through/Pipelined	512 k x 36					19 Bit	SRAM	18 Mbit			Commercial					SRAM
	Mfr Part No GS816136DD-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks		BGA-165	YES		165	4.5 ns		GSI Technology		SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816136DD-333	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C			PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.26	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS816136DD			3A991.B.2.B	Pipeline/Flow Through				FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2.7 V		COMMERCIAL	2.3 V	18 Mbit	4	SYNCHRONOUS		260 mA, 315 mA	4.5 ns			Flow-Through/Pipelined	512 k x 36		1.4 mm	36		19 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		CACHE SRAM		SRAM		15 mm	13 mm
	Mfr Part No GS816132DGD-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-165						GSI Technology		SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	32 Bit	512 kWords																Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS816132DGD				Pipeline/Flow Through						Memory & Data Storage									165							18 Mbit	4			260 mA, 315 mA	4.5 ns			Flow-Through/Pipelined	512 k x 32					19 Bit	SRAM	18 Mbit			Commercial					SRAM
	Mfr Part No GS8161Z32DGD-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-165						GSI Technology		SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	32 Bit	512 kWords																Details		FBGA	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8161Z32DGD				NBT						Memory & Data Storage									165							18 Mbit	4			260 mA, 315 mA	4.5 ns			Flow-Through/Pipelined	512 k x 32					19 Bit	SRAM	18 Mbit			Commercial					SRAM
	Mfr Part No GS832236AB-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		BGA-119	YES		119	5.5 ns		GSI Technology	250 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AB-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.12		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS832236AB	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	36 Mbit	4	SYNCHRONOUS		260 mA, 315 mA	5.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36		20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM		22 mm	14 mm
	Mfr Part No GS816136DGD-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				BGA-165						GSI Technology		SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords																Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS816136DGD				Pipeline/Flow Through						Memory & Data Storage									165							18 Mbit	4			260 mA, 315 mA	4.5 ns			Flow-Through/Pipelined	512 k x 36					19 Bit	SRAM	18 Mbit			Commercial					SRAM
	Mfr Part No GS832132AD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		BGA-165	YES		165	5.5 ns		GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832132AD-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	32 Bit	1 MWords	1000000				PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.3		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS832132AD			3A991.B.2.B	Synchronous Burst				PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V			1.7 V	36 Mbit	4	SYNCHRONOUS		260 mA, 315 mA	5.5 ns			Flow-Through/Pipelined	1 M x 32		1.4 mm	32		20 Bit	SRAM	36 Mbit		33554432 bit	Industrial	PARALLEL		CACHE SRAM		SRAM		15 mm	13 mm
	Mfr Part No GS8161Z36DGD-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks		BGA-165	YES		165	4.5 ns		GSI Technology		SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z36DGD-333	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C			PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.26	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8161Z36DGD			3A991.B.2.B	NBT		70 °C	0 °C	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165		2.7 V		COMMERCIAL	2.3 V	18 Mbit	4	SYNCHRONOUS		260 mA, 315 mA	4.5 ns			Flow-Through/Pipelined	512 k x 36		1.4 mm	36		19 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		SRAM		15 mm	13 mm	No
	Mfr Part No GS8322Z36AB-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		BGA-119	YES		119	5.5 ns		GSI Technology	250 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z36AB-250IV	250 MHz		2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA			5.12	Compliant	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Bulk	GS8322Z36AB			3A991.B.2.B	NBT		100 °C	-40 °C	ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL		1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	36 Mbit	4	SYNCHRONOUS		260 mA, 315 mA	5.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36		20 b	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	1.7 V	SRAM		22 mm	14 mm	No
	Mfr Part No GS8322Z36AGB-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			Surface Mount	BGA-119		119-FPBGA (22x14)			GS8322Z	GSI Technology			14		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	GSI Technology Inc.	1.7, 2.3 V	- 40 C	Yes		SMD/SMT	36 Bit					Tray									Active			Details		FBGA	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V		-40 to 100 °C	Tray	GS8322Z36AGB				NBT						Memory & Data Storage	SRAM - Synchronous, ZBT	1.7V ~ 2V, 2.3V ~ 2.7V							119							36 Mbit			250 MHz	260 mA, 315 mA	5.5@Flow-Through/3@P	SRAM	Parallel		1 M x 36				-		SRAM			36						SRAM	1M x 36
	Mfr Part No GS8322Z36AD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		BGA-165	YES		165	5.5 ns			250 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z36AD-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C			1.7, 2.3 V	- 40 C		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA			4.74	Compliant	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous		1.8, 2.5 V	Industrial grade	-40 to 100 °C	Bulk				3A991.B.2.B			100 °C	-40 °C	ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE	8542.32.00.41	SRAMs	CMOS		BOTTOM	BALL		1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	36 Mbit	4	SYNCHRONOUS		260 mA, 315 mA	5.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36		20 Bit		36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	1.7 V			15 mm	13 mm	No
	Mfr Part No GS832136AGD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		BGA-165	YES		165	5.5 ns		GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832136AGD-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000				PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	4.6	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS832136AGD			3A991.B.2.B	Synchronous Burst				PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V			1.7 V	36 Mbit	4	SYNCHRONOUS		260 mA, 315 mA	5.5 ns			Flow-Through/Pipelined	1 M x 36		1.4 mm	36		20 Bit	SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL		CACHE SRAM		SRAM		15 mm	13 mm

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