The category is 'Memory'

  • All Manufacturers
  • Access Time
  • Address Bus Width
  • Architecture
  • Data Rate Architecture
  • Density
  • Interface Type
  • Maximum Clock Frequency
  • Maximum Operating Supply Voltage
  • Maximum Operating Temperature
  • Memory Size
  • Minimum Operating Temperature
  • Supply Current-Max
  • Supply Current-Max:

    270 mA, 400 mA

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Factory Lead Time

Package / Case

Surface Mount

Number of Terminals

Access Time-Max

Brand

Clock Frequency-Max (fCLK)

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

Manufacturer

Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Moisture Sensitivity Levels

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Package Body Material

Package Code

Package Description

Package Equivalence Code

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

ECCN Code

Type

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Supply Current-Max

Access Time

Architecture

Organization

Output Characteristics

Seated Height-Max

Memory Width

Address Bus Width

Product Type

Density

Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Memory IC Type

Standby Voltage-Min

Product Category

Length

Width

Radiation Hardening

GS864436GE-250V

Mfr Part No

GS864436GE-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

SDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS864436GE-250V

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.14

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS864436GE

e1

Yes

3A991.B.2.B

Synchronous Burst

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

COMMERCIAL

1.7 V

72 Mbit

4

SYNCHRONOUS

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.4 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

17 mm

15 mm

GS8644Z36E-250

Mfr Part No

GS8644Z36E-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

250 MHz

SDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8644Z36E-250

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.15

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8644Z36E

No

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.5 mm

36

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

17 mm

15 mm

GS8644Z36GE-250V

Mfr Part No

GS8644Z36GE-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

SDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8644Z36GE-250V

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.28

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8644Z36GE

e1

Yes

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

COMMERCIAL

1.7 V

72 Mbit

4

SYNCHRONOUS

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

SRAM

17 mm

15 mm

GS864436E-250

Mfr Part No

GS864436E-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

SDR

Parallel

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

2.3, 3 V

0 C

Surface Mount

SMD/SMT

36 Bit

2 MWords

FBGA

3.6 V

2.3 V

Synchronous

2.5, 3.3 V

Commercial grade

0 to 70 °C

GS864436E

165

72 Mbit

4

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

72 Mbit

Commercial

GS864436GE-250

Mfr Part No

GS864436GE-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

15

Parallel

GSI Technology

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

2 MWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS864436GE

Synchronous Burst

70 °C

0 °C

Memory & Data Storage

165

72 Mbit

4

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

No

GS8644Z36E-250V

Mfr Part No

GS8644Z36E-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

SDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8644Z36E-250V

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.29

Compliant

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8644Z36E

e1

Yes

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

COMMERCIAL

1.7 V

72 Mbit

4

SYNCHRONOUS

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

SRAM

17 mm

15 mm

No

GS8644Z36GE-250

Mfr Part No

GS8644Z36GE-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

250 MHz

SDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8644Z36GE-250

250 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.15

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8644Z36GE

e1

Yes

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.5 mm

36

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

17 mm

15 mm

No

GS864436E-250V

Mfr Part No

GS864436E-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

15

Parallel

GSI Technology

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

2 MWords

N

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS864436E

Synchronous Burst

70 °C

0 °C

Memory & Data Storage

165

72 Mbit

4

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

No