The category is 'Memory'
Memory (8)
- All Manufacturers
- Access Time
- Address Bus Width
- Architecture
- Data Rate Architecture
- Density
- Interface Type
- Maximum Clock Frequency
- Maximum Operating Supply Voltage
- Maximum Operating Temperature
- Memory Size
- Minimum Operating Temperature
- Supply Current-Max
- Supply Current-Max:
270 mA, 400 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width | Radiation Hardening |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr Part No GS864436GE-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | SDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864436GE-250V | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.14 | Details | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS864436GE | e1 | Yes | 3A991.B.2.B | Synchronous Burst | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | COMMERCIAL | 1.7 V | 72 Mbit | 4 | SYNCHRONOUS | 270 mA, 400 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | 1.4 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 17 mm | 15 mm | |||||||||||
![]() | Mfr Part No GS8644Z36E-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | 250 MHz | SDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8644Z36E-250 | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.15 | N | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8644Z36E | No | 3A991.B.2.B | NBT | ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 72 Mbit | 4 | SYNCHRONOUS | 270 mA, 400 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | 3-STATE | 1.5 mm | 36 | 21 Bit | SRAM | 72 Mbit | 0.12 A | 75497472 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 17 mm | 15 mm | ||||||
![]() | Mfr Part No GS8644Z36GE-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | SDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8644Z36GE-250V | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.28 | Details | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS8644Z36GE | e1 | Yes | 3A991.B.2.B | NBT | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | COMMERCIAL | 1.7 V | 72 Mbit | 4 | SYNCHRONOUS | 270 mA, 400 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | 1.5 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Commercial | PARALLEL | ZBT SRAM | SRAM | 17 mm | 15 mm | |||||||||||
![]() | Mfr Part No GS864436E-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | SDR | Parallel | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 70 C | 2.3, 3 V | 0 C | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | FBGA | 3.6 V | 2.3 V | Synchronous | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | GS864436E | 165 | 72 Mbit | 4 | 270 mA, 400 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | 72 Mbit | Commercial | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS864436GE-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 15 | Parallel | GSI Technology | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | Compliant | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS864436GE | Synchronous Burst | 70 °C | 0 °C | Memory & Data Storage | 165 | 72 Mbit | 4 | 270 mA, 400 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | SRAM | 72 Mbit | Commercial | SRAM | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8644Z36E-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | SDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8644Z36E-250V | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.29 | Compliant | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS8644Z36E | e1 | Yes | 3A991.B.2.B | NBT | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | COMMERCIAL | 1.7 V | 72 Mbit | 4 | SYNCHRONOUS | 270 mA, 400 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | 1.5 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Commercial | PARALLEL | ZBT SRAM | SRAM | 17 mm | 15 mm | No | ||||||||
![]() | Mfr Part No GS8644Z36GE-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | 250 MHz | SDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8644Z36GE-250 | 250 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.15 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8644Z36GE | e1 | Yes | 3A991.B.2.B | NBT | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 72 Mbit | 4 | SYNCHRONOUS | 270 mA, 400 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | 3-STATE | 1.5 mm | 36 | 21 Bit | SRAM | 72 Mbit | 0.12 A | 75497472 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 17 mm | 15 mm | No | ||
![]() | Mfr Part No GS864436E-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 15 | Parallel | GSI Technology | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | N | FBGA | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS864436E | Synchronous Burst | 70 °C | 0 °C | Memory & Data Storage | 165 | 72 Mbit | 4 | 270 mA, 400 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | SRAM | 72 Mbit | Commercial | SRAM | No |
GS864436GE-250V
GSI Technology
Package:Memory
Price: please inquire
GS8644Z36E-250
GSI Technology
Package:Memory
Price: please inquire
GS8644Z36GE-250V
GSI Technology
Package:Memory
Price: please inquire
GS864436E-250
GSI Technology
Package:Memory
Price: please inquire
GS864436GE-250
GSI Technology
Package:Memory
Price: please inquire
GS8644Z36E-250V
GSI Technology
Package:Memory
Price: please inquire
GS8644Z36GE-250
GSI Technology
Package:Memory
Price: please inquire
GS864436E-250V
GSI Technology
Package:Memory
Price: please inquire
