The category is 'Memory'

  • All Manufacturers
  • Access Time
  • Interface Type
  • Maximum Clock Frequency
  • Maximum Operating Temperature
  • Memory Size
  • Minimum Operating Temperature
  • Mounting Styles
  • Organization
  • Package / Case
  • Supply Current-Max
  • Supply Voltage-Max
  • Supply Voltage-Min
  • Supply Current-Max:

    280 mA, 365 mA

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Supplier Device Package

Number of Terminals

Access Time-Max

Base Product Number

Brand

Clock Frequency-Max (fCLK)

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

Manufacturer

Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

Mfr

Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Moisture Sensitivity Levels

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

Package

Package Body Material

Package Code

Package Description

Package Equivalence Code

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Product Status

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

ECCN Code

Type

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Technology

Voltage - Supply

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Clock Frequency

Supply Current-Max

Access Time

Memory Format

Memory Interface

Architecture

Organization

Output Characteristics

Seated Height-Max

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Product Type

Density

Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Memory IC Type

Standby Voltage-Min

Product Category

Memory Organization

Length

Width

Radiation Hardening

GS816132DGT-400

Mfr Part No

GS816132DGT-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

400 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Compliant

3.6 V

2.3 V

SyncBurst

Tray

GS816132DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

280 mA, 365 mA

4 ns

512 k x 32

SRAM

SRAM

GS8322Z36AB-333I

Mfr Part No

GS8322Z36AB-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

14

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

GS8322Z36AB

NBT Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

119

36 Mbit

4

280 mA, 365 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

No

GS816236DGD-400

Mfr Part No

GS816236DGD-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Bulk

GS816236DGD

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

165

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

No

GS816032DGT-400

Mfr Part No

GS816032DGT-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

4 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816032DGT-400

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.34

Compliant

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Bulk

GS816032DGT

3A991.B.2.B

Pipeline/Flow Through

85 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2.7 V

COMMERCIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 32

1.6 mm

32

20 Bit

SRAM

18 Mbit

16777216 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

GS8320E32AGT-333I

Mfr Part No

GS8320E32AGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

222@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

32 Bit

1 MWords

Compliant

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

GS8320E32AGT

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

100

36 Mbit

4

280 mA, 365 mA

4.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

No

GS832132AGD-333I

Mfr Part No

GS832132AGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

32 Bit

1 MWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

GS832132AGD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

165

36 Mbit

4

280 mA, 365 mA

4.5 ns

Flow-Through/Pipelined

1 M x 32

20 b

SRAM

36 Mbit

Industrial

SRAM

No

GS832136AD-333I

Mfr Part No

GS832136AD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

GSI Technology

333 MHz

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832136AD-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

SMD/SMT

36 Bit

1048576 words

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

5.16

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

-40 to 100 °C

Bulk

GS832136AD

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4.5@Flow-Through/2.5

1 M x 36

3-STATE

1.4 mm

36

20 b

SRAM

36 Mb

0.04 A

36

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

No

GS8321E36AD-333I

Mfr Part No

GS8321E36AD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

GSI Technology

333 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-333I

333 MHz

222@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

GS8321E36AD

e0

No

3A991.B.2.B

DCD Pipeline/Flow Through

TIN LEAD

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

No

GS8161E32DD-400

Mfr Part No

GS8161E32DD-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Bulk

GS8161E32DD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

165

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM

No

GS8160Z36DGT-400

Mfr Part No

GS8160Z36DGT-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

TQFP

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8160Z36DGT

NBT Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8160E36DGT-400

Mfr Part No

GS8160E36DGT-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

4 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8160E36DGT-400

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.38

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8160E36DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2.7 V

COMMERCIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

GS832236AD-333I

Mfr Part No

GS832236AD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

SDR

Parallel

333 MHz

222@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

Surface Mount

SMD/SMT

36 Bit

1 MWords

FBGA

3.6 V

2.3 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 100 °C

165

36 Mbit

4

280 mA, 365 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Industrial

GS816136DGT-400

Mfr Part No

GS816136DGT-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

4 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS816136DGT-400

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.26

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS816136DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-PQFP-G100

2.7 V

COMMERCIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

GS8322Z36AD-333I

Mfr Part No

GS8322Z36AD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

GSI Technology

333 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AD-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.12

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8322Z36AD

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

15 mm

13 mm

GS8161Z32DD-400

Mfr Part No

GS8161Z32DD-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

BGA-165

YES

165

4 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z32DD-400

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

32 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.3

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8161Z32DD

3A991.B.2.B

NBT

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

2.7 V

COMMERCIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 32

1.4 mm

32

19 Bit

SRAM

18 Mbit

16777216 bit

Commercial

PARALLEL

ZBT SRAM

SRAM

15 mm

13 mm

GS816136DGD-400

Mfr Part No

GS816136DGD-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS816136DGD

Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8162Z36DD-400

Mfr Part No

GS8162Z36DD-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

400 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

N

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8162Z36DD

NBT Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

SRAM

18 Mbit

Commercial

SRAM

GS8321E32AD-333I

Mfr Part No

GS8321E32AD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

222@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

32 Bit

1 MWords

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8321E32AD

DCD Pipeline/Flow Through

Memory & Data Storage

165

36 Mbit

4

280 mA, 365 mA

4.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

GS832236AGB-333I

Mfr Part No

GS832236AGB-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

Surface Mount

BGA-119

YES

119-FPBGA (22x14)

119

4.5 ns

GS832236

GSI Technology

333 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS832236AGB-333I

333 MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

Active

NOT SPECIFIED

5.12

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS832236AGB

e1

Yes

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

333 MHz

280 mA, 365 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

-

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

1M x 36

22 mm

14 mm

GS8162Z36DGD-400

Mfr Part No

GS8162Z36DGD-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8162Z36DGD

NBT Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM