The category is 'Memory'
Memory (24)
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- Access Time
- Interface Type
- Maximum Clock Frequency
- Maximum Operating Supply Voltage
- Maximum Operating Temperature
- Memory Size
- Minimum Operating Supply Voltage
- Minimum Operating Temperature
- Mounting Styles
- Number of I/O Lines
- Organization
- Supply Current-Max
- Supply Current-Max:
285 mA, 395 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS832036AGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 4 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832036AGT-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.7 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832036AGT | 3A991.B.2.B | Pipeline/Flow Through | ALSO OPERATES AT 3.3; SYNCHRONOUS BURST | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 1.6 mm | 36 | 20 Bit | SRAM | 36 Mbit | 37748736 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | ||||||||||||||||
![]() | Mfr Part No GS8321E36AD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4 ns | 400 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321E36AD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | 2.3, 3 V | 0 C | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.3 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | e0 | No | 3A991.B.2.B | TIN LEAD | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 15 mm | 13 mm | |||||||||||||||||
![]() | Mfr Part No GS832132AD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4.5 ns | GSI Technology | 400 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832132AD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.16 | N | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832132AD | 3A991.B.2.B | Pipeline/Flow Through | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 32 | 3-STATE | 1.4 mm | 32 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 33554432 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||||||||||
![]() | Mfr Part No GS832032AGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 400 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832032AGT | Pipeline/Flow Through | Memory & Data Storage | 100 | 36 Mbit | 4 | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 32 | SRAM | 36 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z36AGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4 ns | GSI Technology | 400 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AGD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.26 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8322Z36AGD | e1 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||||
![]() | Mfr Part No GS8321Z36AD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z36AD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.3 | N | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8321Z36AD | e0 | No | 3A991.B.2.B | NBT | Tin/Lead (Sn/Pb) | 85 °C | 0 °C | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 37748736 bit | Commercial | PARALLEL | ZBT SRAM | SRAM | 15 mm | 13 mm | No | |||||||||||
![]() | Mfr Part No GS8321Z36AGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | GSI Technology | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z36AGD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | SMD/SMT | 36 Bit | 1048576 words | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.3 | Compliant | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | 0 to 85 °C | Bulk | GS8321Z36AGD | e1 | Yes | 3A991.B.2.B | NBT | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4@Flow-Through/2.5@P | 1 M x 36 | 1.4 mm | 36 | 20 b | SRAM | 36 Mb | 36 | PARALLEL | ZBT SRAM | SRAM | 15 mm | 13 mm | No | |||||||||||||||
![]() | Mfr Part No GS832236AGB-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 4 ns | GSI Technology | 400 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AGB-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832236AGB | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | 20 Bit | SRAM | 36 Mb | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 22 mm | 14 mm | No | |
![]() | Mfr Part No GS8321E32AGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4 ns | 400 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321E32AGD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | 2.3, 3 V | 0 C | 3 | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.31 | Compliant | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Bulk | GS8321E32AGD | e1 | Yes | 3A991.B.2.B | TIN SILVER COPPER | 85 °C | 0 °C | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 32 | 3-STATE | 1.4 mm | 32 | 20 Bit | 36 Mbit | 0.03 A | 33554432 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 15 mm | 13 mm | No | ||||||||||
![]() | Mfr Part No GS8320E36AGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 18 | Parallel | GSI Technology | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | SMD/SMT | 36 Bit | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | 0 to 85 °C | Tray | GS8320E36AGT | Pipeline/Flow Through | Memory & Data Storage | 100 | 36 Mbit | 285 mA, 395 mA | 4@Flow-Through/2.5@P | 1 M x 36 | SRAM | 36 | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8320Z36AGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8320Z36AGT | NBT Pipeline/Flow Through | Memory & Data Storage | 100 | 36 Mbit | 4 | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 20 Bit | SRAM | 36 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832132AGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4.5 ns | GSI Technology | 400 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832132AGD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.16 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832132AGD | 3A991.B.2.B | Pipeline/Flow Through | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 32 | 3-STATE | 1.4 mm | 32 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 33554432 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||||||||
![]() | Mfr Part No GS832136AD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4.5 ns | GSI Technology | 400 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832136AD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.16 | N | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832136AD | 3A991.B.2.B | Pipeline/Flow Through | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||||||||||
![]() | Mfr Part No GS8322Z36AB-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 4 ns | GSI Technology | 400 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AB-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | N | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8322Z36AB | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | |||||
![]() | Mfr Part No GS8321Z32AD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | GSI Technology | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z32AD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | SMD/SMT | 32 Bit | 1048576 words | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.3 | N | No | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8321Z32AD | e0 | No | 3A991.B.2.B | NBT | Tin/Lead (Sn/Pb) | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | OTHER | 2.3 V | 36 Mbit | SYNCHRONOUS | 285 mA, 395 mA | 4@Flow-Through/2.5@P | 1 M x 32 | 1.4 mm | 32 | SRAM | 36 | Commercial | PARALLEL | ZBT SRAM | SRAM | 15 mm | 13 mm | |||||||||||||||||||||
![]() | Mfr Part No GS8322Z36AD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | SDR | Parallel | 400 MHz | 2.7, 3.6 V | + 70 C | 2.3, 3 V | 0 C | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | Compliant | FBGA | 3.6 V | 2.3 V | Synchronous | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Bulk | 85 °C | 0 °C | 165 | 36 Mbit | 4 | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 20 b | 36 Mbit | Commercial | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z36AGB-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 4 ns | 400 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AGB-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | 2.3, 3 V | 0 C | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | Compliant | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Bulk | GS8322Z36AGB | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | 20 Bit | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | 22 mm | 14 mm | No | |||||||||
![]() | Mfr Part No GS8320E32AGT-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | Compliant | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Bulk | GS8320E32AGT | Pipeline/Flow Through | 85 °C | 0 °C | Memory & Data Storage | 100 | 36 Mbit | 4 | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 32 | 20 Bit | SRAM | 36 Mbit | Commercial | SRAM | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832136AGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4.5 ns | GSI Technology | 400 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832136AGD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.16 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832136AGD | 3A991.B.2.B | Pipeline/Flow Through | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||||||||
![]() | Mfr Part No GS832236AGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4 ns | GSI Technology | 400 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AGD-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.12 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832236AGD | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm |
GS832036AGT-400
GSI Technology
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GS8321E36AD-400
GSI Technology
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GS832132AD-400
GSI Technology
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GS832032AGT-400
GSI Technology
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GS8322Z36AGD-400
GSI Technology
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GS8321Z36AD-400
GSI Technology
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GS8321Z36AGD-400
GSI Technology
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GS832236AGB-400
GSI Technology
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GS8321E32AGD-400
GSI Technology
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GS8320E36AGT-400
GSI Technology
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GS8320Z36AGT-400
GSI Technology
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GS832132AGD-400
GSI Technology
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GS832136AD-400
GSI Technology
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GS8322Z36AB-400
GSI Technology
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GS8321Z32AD-400
GSI Technology
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GS8322Z36AD-400
GSI Technology
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GS8322Z36AGB-400
GSI Technology
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GS8320E32AGT-400
GSI Technology
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GS832136AGD-400
GSI Technology
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GS832236AGD-400
GSI Technology
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