The category is 'Memory'
Memory (2)
- All Manufacturers
- Access Time
- Address Bus Width
- Architecture
- Data Rate Architecture
- Density
- Factory Pack QuantityFactory Pack Quantity
- Interface Type
- Maximum Clock Rate
- Maximum Operating Temperature
- Memory Size
- Minimum Operating Temperature
- Supply Current-Max
- Supply Current-Max:
320 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Memory Density | Screening Level | Parallel/Serial | Memory IC Type | Product Category | Memory Organization | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No CY7C1319KV18-250BZXC | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | 165-FBGA (13x15) | CY7C1319 | DDR | 680 | Parallel | 250 MHz | 250 MHz | + 70 C | Volatile | Infineon Technologies | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | Tray | Active | Details | FBGA | 1.9 V | 1.7 V | Synchronous | 1.8000 V | Commercial grade | 0 to 70 °C | Tray | CY7C1319KV18 | Synchronous | SRAM - Synchronous, DDR II | 1.7V ~ 1.9V | 165 | 18 Mbit | 1 | 250 MHz | 320 mA | 450 ps | SRAM | Parallel | Pipelined | 1 M x 18 | - | 20 Bit | 18 Mb | Commercial | 1M x 18 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS8640FZ36GT-5.5I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 5.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8640FZ36GT-5.5I | 181.8 MHz | 3.6 V | + 85 C | SDR | 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.6 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 3.3000 V | Industrial grade | -40 to 85 °C | Tray | GS8640FZ36GT | e3 | Yes | 3A991.B.2.B | NBT Flow Through | Matte Tin (Sn) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY. | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.75 V | INDUSTRIAL | 2.25 V | 72 Mbit | 4 | SYNCHRONOUS | 320 mA | 5.5 ns | Flow-Through | 2 M x 36 | 1.6 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 20 mm | 14 mm |