The category is 'Memory'
Memory (8)
- All Manufacturers
- Access Time
- Data Rate Architecture
- Density
- Interface Type
- Maximum Clock Frequency
- Maximum Operating Supply Voltage
- Maximum Operating Temperature
- Memory Size
- Minimum Operating Supply Voltage
- Minimum Operating Temperature
- Mounting Styles
- Supply Current-Max
- Supply Current-Max:
360 mA, 435 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Memory Density | Screening Level | Parallel/Serial | Memory IC Type | Product Category | Length | Width |
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![]() | Mfr Part No GS8128418B-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-119 | YES | 119 | 7.5 ns | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8128418B-200I | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | - 40 C | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.19 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | GS8128418B | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY | 8542.32.00.41 | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 144 Mbit | 2 | SYNCHRONOUS | 360 mA, 435 mA | 7.5 ns | Flow-Through/Pipelined | 8 M x 18 | 1.99 mm | 18 | 23 Bit | 144 Mbit | 150994944 bit | Industrial | PARALLEL | CACHE SRAM | 22 mm | 14 mm | ||||||||||||
![]() | Mfr Part No GS8128418GB-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 10 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS8128418GB | SCD/DCD Pipeline/Flow Through | Memory & Data Storage | 119 | 144 Mbit | 2 | 360 mA, 435 mA | 7.5 ns | Flow-Through/Pipelined | 8 M x 18 | 23 Bit | SRAM | 144 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8128418GB-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | SDR | Parallel | 200 MHz | 200 MHz | 2, 2.7 V | + 85 C | 1.7, 2.3 V | - 40 C | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | FBGA | 3.6 V | 2.3 V | Synchronous | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | 119 | 144 Mbit | 2 | 360 mA, 435 mA | 7.5 ns | Flow-Through/Pipelined | 8 M x 18 | 23 Bit | 144 Mbit | Industrial | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8128418B-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | SDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8128418B-200IV | 200 MHz | 200 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.19 | No | 3.6 V | 2.3 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8128418B | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 144 Mbit | 2 | SYNCHRONOUS | 360 mA, 435 mA | 7.5 ns | 8 M x 18 | 1.99 mm | 18 | SRAM | 144 Mbit | 150994944 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | |||||
![]() | Mfr Part No GS81284Z18B-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | SDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81284Z18B-200I | 200 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.21 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS81284Z18B | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 144 Mbit | 2 | SYNCHRONOUS | 360 mA, 435 mA | 7.5 ns | Flow-Through/Pipelined | 8MX18 | 1.99 mm | 18 | SRAM | 144 Mbit | 150994944 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 22 mm | 14 mm | |||||
![]() | Mfr Part No GS81284Z18GB-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 10 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS81284Z18GB | NBT Pipeline/Flow Through | Memory & Data Storage | 119 | 144 Mbit | 2 | 360 mA, 435 mA | 7.5 ns | Flow-Through/Pipelined | 8 M x 18 | 23 Bit | SRAM | 144 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS81284Z18GB-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | SDR | Parallel | 200 MHz | 200 MHz | 2, 2.7 V | + 85 C | 1.7, 2.3 V | - 40 C | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | FBGA | 3.6 V | 2.3 V | Synchronous | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | GS81284Z18GB | 119 | 144 Mbit | 2 | 360 mA, 435 mA | 7.5 ns | Flow-Through/Pipelined | 8 M x 18 | 22 Bit | 144 Mbit | Industrial | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS81284Z18B-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | SDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81284Z18B-200IV | 200 MHz | 200 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.34 | Compliant | No | 3.6 V | 2.3 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS81284Z18B | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 144 Mbit | 2 | SYNCHRONOUS | 360 mA, 435 mA | 7.5 ns | Flow-Through/Pipelined | 8MX18 | 1.99 mm | 18 | 22 Bit | SRAM | 144 Mbit | 150994944 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 22 mm | 14 mm |
GS8128418B-200I
GSI Technology
Package:Memory
Price: please inquire
GS8128418GB-200I
GSI Technology
Package:Memory
Price: please inquire
GS8128418GB-200IV
GSI Technology
Package:Memory
Price: please inquire
GS8128418B-200IV
GSI Technology
Package:Memory
Price: please inquire
GS81284Z18B-200I
GSI Technology
Package:Memory
Price: please inquire
GS81284Z18GB-200I
GSI Technology
Package:Memory
Price: please inquire
GS81284Z18GB-200IV
GSI Technology
Package:Memory
Price: please inquire
GS81284Z18B-200IV
GSI Technology
Package:Memory
Price: please inquire
