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      Home / All Categories / Integrated Circuits (ICs) / PMIC - Gate Drivers /

      The category is 'PMIC - Gate Drivers'

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      • High Side Driver
      • Input Current
      • Max Power Dissipation
      • Max Power Dissipation:

        1.12W

      Image

      Part Number

      Manufacturer

      Datasheet

      Availability

      Pricing(USD)

      Quantity

      RoHS

      Factory Lead Time

      Mounting Type

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      Input Current

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      Gate Type

      Current - Peak Output (Source, Sink)

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      Turn Off Time

      Height

      Length

      Width

      Radiation Hardening

      REACH SVHC

      RoHS Status

      Lead Free
      MCP14E7-E/P

      Mfr Part No

      MCP14E7-E/P

      		Microchip Technology Datasheet

      4000
      In Stock

      Min: 1

      Mult: 1

      7 Weeks

      Through Hole

      8-DIP (0.300, 7.62mm)

      NO

      8

      Low-Side

      0.8V 2.4V

      -40°C~150°C TJ

      Tube

      2011

      e3

      Active

      1 (Unlimited)

      8

      EAR99

      Matte Tin (Sn) - annealed

      1.12W

      4.5V~18V

      DUAL

      NOT APPLICABLE

      1

      12V

      NOT APPLICABLE

      MCP14E7

      8

      2

      Not Qualified

      18V

      2A

      1mA

      1.12W

      2A

      1.8mA

      65 ns

      Non-Inverting

      65 ns

      12ns

      15 ns

      12ns 15ns

      HALF BRIDGE BASED MOSFET DRIVER

      Independent

      10μA

      0.035 μs

      1μA

      2A

      IGBT, N-Channel, P-Channel MOSFET

      2A 2A

      YES

      0.04 μs

      4.95mm

      10.16mm

      7.11mm

      No SVHC

      ROHS3 Compliant

      Lead Free

      MCP14E11-E/P

      Mfr Part No

      MCP14E11-E/P

      		Microchip Technology Datasheet

      206
      In Stock

      Min: 1

      Mult: 1

      7 Weeks

      Through Hole

      8-DIP (0.300, 7.62mm)

      NO

      8

      Low-Side

      0.8V 2.4V

      -40°C~150°C TJ

      Tube

      2006

      e3

      Active

      1 (Unlimited)

      8

      EAR99

      Matte Tin (Sn) - annealed

      1.12W

      4.5V~18V

      1

      12V

      MCP14E11

      8

      2

      18V

      3A

      Dual

      1.8mA

      1.12W

      3A

      1.8mA

      65 ns

      Inverting, Non-Inverting

      65 ns

      30ns

      30 ns

      25ns 25ns

      HALF BRIDGE BASED MOSFET DRIVER

      Independent

      10μA

      0.04 μs

      1μA

      3A

      IGBT, N-Channel, P-Channel MOSFET

      3A 3A

      YES

      0.04 μs

      4.95mm

      10.16mm

      7.11mm

      No

      No SVHC

      ROHS3 Compliant

      Lead Free

      MCP14E10-E/P

      Mfr Part No

      MCP14E10-E/P

      		Microchip Technology Datasheet

      -

      Min: 1

      Mult: 1

      7 Weeks

      Through Hole

      8-DIP (0.300, 7.62mm)

      NO

      8

      Low-Side

      0.8V 2.4V

      -40°C~150°C TJ

      Tube

      2011

      e3

      Active

      1 (Unlimited)

      8

      EAR99

      Matte Tin (Sn) - annealed

      1.12W

      4.5V~18V

      DUAL

      NOT APPLICABLE

      1

      12V

      NOT APPLICABLE

      MCP14E10

      8

      2

      Not Qualified

      18V

      3A

      1.8mA

      1.12W

      3A

      1.8mA

      65 ns

      Non-Inverting

      65 ns

      14ns

      17 ns

      25ns 25ns

      HALF BRIDGE BASED MOSFET DRIVER

      Independent

      10μA

      0.04 μs

      1μA

      3A

      IGBT, N-Channel, P-Channel MOSFET

      3A 3A

      YES

      0.04 μs

      4.953mm

      10.16mm

      7.112mm

      No SVHC

      ROHS3 Compliant

      Lead Free

      MCP14E8-E/P

      Mfr Part No

      MCP14E8-E/P

      		Microchip Technology Datasheet

      166
      In Stock

      Min: 1

      Mult: 1

      7 Weeks

      Through Hole

      8-DIP (0.300, 7.62mm)

      NO

      8

      Low-Side

      0.8V 2.4V

      -40°C~150°C TJ

      Tube

      2011

      e3

      Active

      1 (Unlimited)

      8

      EAR99

      Matte Tin (Sn) - annealed

      1.12W

      4.5V~18V

      DUAL

      1

      12V

      MCP14E8

      8

      2

      18V

      2A

      1.8mA

      1.12W

      2A

      1.8mA

      65 ns

      Inverting, Non-Inverting

      65 ns

      30ns

      35 ns

      12ns 15ns

      HALF BRIDGE BASED MOSFET DRIVER

      Independent

      10μA

      0.035 μs

      1μA

      2A

      IGBT, N-Channel, P-Channel MOSFET

      2A 2A

      YES

      0.04 μs

      4.95mm

      10.16mm

      7.11mm

      No

      No SVHC

      ROHS3 Compliant

      Lead Free

      MCP14E6-E/P

      Mfr Part No

      MCP14E6-E/P

      		Microchip Technology Datasheet

      4000
      In Stock

      Min: 1

      Mult: 1

      7 Weeks

      Through Hole

      8-DIP (0.300, 7.62mm)

      NO

      8

      Low-Side

      0.8V 2.4V

      -40°C~150°C TJ

      Tube

      2011

      e3

      Active

      1 (Unlimited)

      8

      EAR99

      Matte Tin (Sn) - annealed

      1.12W

      4.5V~18V

      DUAL

      1

      12V

      MCP14E6

      8

      2

      18V

      2A

      1.8mA

      1.12W

      2A

      1.8mA

      65 ns

      Inverting

      65 ns

      30ns

      35 ns

      12ns 15ns

      HALF BRIDGE BASED MOSFET DRIVER

      Independent

      10μA

      0.035 μs

      1μA

      2A

      IGBT, N-Channel, P-Channel MOSFET

      2A 2A

      YES

      0.04 μs

      4.95mm

      10.16mm

      7.11mm

      No

      No SVHC

      ROHS3 Compliant

      Lead Free

      MCP14E9-E/P

      Mfr Part No

      MCP14E9-E/P

      		Microchip Technology Datasheet

      4000
      In Stock

      Min: 1

      Mult: 1

      7 Weeks

      Through Hole

      8-DIP (0.300, 7.62mm)

      NO

      8

      Low-Side

      0.8V 2.4V

      -40°C~150°C TJ

      Tube

      2010

      e3

      Active

      1 (Unlimited)

      8

      EAR99

      Matte Tin (Sn) - annealed

      1.12W

      4.5V~18V

      DUAL

      NOT APPLICABLE

      1

      12V

      NOT APPLICABLE

      MCP14E9

      8

      Not Qualified

      18V

      3A

      1.8mA

      1.12W

      3A

      1.8mA

      65 ns

      Inverting

      65 ns

      14ns

      17 ns

      14ns 17ns

      HALF BRIDGE BASED MOSFET DRIVER

      Independent

      2

      10μA

      0.04 μs

      1μA

      3A

      IGBT, N-Channel, P-Channel MOSFET

      3A 3A

      YES

      0.04 μs

      4.95mm

      10.16mm

      7.11mm

      No SVHC

      ROHS3 Compliant

      Lead Free