The category is 'Specialized ICs'

  • All Manufacturers
  • Current - Continuous Drain (Id) @ 25℃
  • Drain to Source Voltage (Vdss)
  • Drive Voltage (Max Rds On, Min Rds On)
  • FET Feature
  • FET Type
  • Gate Charge (Qg) (Max) @ Vgs
  • Input Capacitance (Ciss) (Max) @ Vds
  • Mfr
  • Mounting Type
  • Operating Temperature
  • Package
  • Package / Case
  • Package / Case:

    SC-100, SOT-669

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Mounting Type

Package / Case

Supplier Device Package

Base Product Number

Current - Continuous Drain (Id) @ 25℃

Drive Voltage (Max Rds On, Min Rds On)

Mfr

Package

Power Dissipation (Max)

Product Status

Operating Temperature

Series

Technology

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Vgs (Max)

FET Feature

PH2525L115

Mfr Part No

PH2525L115

NXP Semiconductors Datasheet

-

-

Min: 1

Mult: 1

Surface Mount

SC-100, SOT-669

LFPAK56, Power-SO8

PH25

100A (Tc)

4.5V, 10V

NXP Semiconductors

Bulk

62.5W (Tc)

Active

-55°C ~ 150°C (TJ)

*

MOSFET (Metal Oxide)

N-Channel

2.5mOhm @ 25A, 10V

2.15V @ 1mA

4470 pF @ 12 V

34.7 nC @ 4.5 V

25 V

±20V

-

BUK7Y20-30B115

Mfr Part No

BUK7Y20-30B115

NXP USA Inc. Datasheet

-

-

Min: 1

Mult: 1

Surface Mount

SC-100, SOT-669

LFPAK56, Power-SO8

39.5A (Tc)

10V

NXP USA Inc.

Bulk

59W (Tc)

Active

-55°C ~ 175°C (TJ)

*

MOSFET (Metal Oxide)

N-Channel

20mOhm @ 20A, 10V

4V @ 1mA

688 pF @ 25 V

11.2 nC @ 10 V

30 V

±20V

-