The category is 'Memory Cards'
Memory Cards (25)
- All Manufacturers
- ECCN Code
- Organization
- Memory Width
- Number of Functions
- Part Status
- RoHS Status
- Supply Voltage-Max (Vsup)
- Supply Voltage-Min (Vsup)
- Surface Mount
- Terminal Form
- Terminal Position
- CAS Latency
- ECCN Code:
EAR99
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Surface Mount | Number of Pins | Weight | Number of Terminals | Access Time-Max | CAS Latency | Chip Configuration | Chip Density (bit) | Chip Package Type | Clock Frequency-Max (fCLK) | Data Bus Width (bit) | Device Core Size | ECC Support | ECCN (US) | HTS | Ihs Manufacturer | Lead Shape | Main Category | Manufacturer | Manufacturer Part Number | Max. Access Time (ns) | Maximum Clock Rate | Maximum Clock Rate (MHz) | Maximum Operating Supply Voltage | Maximum Operating Supply Voltage (V) | Maximum Operating Temperature (°C) | Memory | Memory capacity | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Supply Voltage (V) | Minimum Operating Temperature (°C) | Model | Module | Module Density | Module Sides | Mounting | Number of Elements | Number of Chip Banks | Number of Chip per Module | Number of Ranks | Number of Words | Number of Words Code | Operating Current (mA) | Operating Supply Voltage (Typ) | Operating Temp Range | Operating Temperature (Max.) | Operating Temperature (Min.) | Operating Temperature Classification | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Height | Package Length | Package Shape | Package Style | Package Type | Package Width | Part Life Cycle Code | Part Package Code | PC Type | PCB changed | Pins | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | SPD EEPROM Support | Standard Package Name | Sub-Category | Supplier Package | Supplier Temperature Grade | Supply Voltage-Nom (Vsup) | Total Density | Typical Operating Supply Voltage | Typical Operating Supply Voltage (V) | Operating Temperature | Published | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Configuration | Voltage | Memory Size | Number of Ports | Speed | Operating Mode | Clock Frequency | Supply Current-Max | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Density | Standby Current-Max | Memory Density | PLL | Parallel/Serial | I/O Type | Memory IC Type | Capacity | Refresh Cycles | Access Mode | Features | Self Refresh | Module Type | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
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![]() | Mfr Part No KVR16N11S8/4 | Kingston Technology | Datasheet | 26 |
| Min: 1 Mult: 1 | 4 Weeks, 2 Days | NO | 240 | 11 | 512Mx8 | 4G | FBGA | 64 | No | EAR99 | 8473.30.11.40 | KINGSTON TECHNOLOGY COMPANY INC | No Lead | DRAM Module | Kingston Technology Company | KVR16N11S8/4 | 800 MHz | 1600 | 1.575 V | 1.575 | 85 | 4GB | 4GB | 1.425 V | 1.425 | 0 | ValueRAM | DRAM Module | 4Gbyte | Single | Socket | 8 | 8 | Single | 536870912 words | 512000000 | 85 °C | UNSPECIFIED | , | 30 | 133.35 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Contact Manufacturer | PC3-12800 | 240 | 240 | NOT SPECIFIED | 5.7 | Yes | No | DIM | DDR3 SDRAM | DIMM | 1.5 V | 4 GB | 1.5 V | 1.5 | 0 to 85 °C | Active | EAR99 | ValueRAM | PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM | 8473.30.11.40 | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | unknown | 240 | R-XDMA-N240 | 1.575 V | OTHER | 1.425 V | 240-pin DIMM | 1.5V | 1 | 1600MHz | SYNCHRONOUS | 64 Bit | 512Mx64 | 30 mm | 64 | 34359738368 bit | No | DDR DRAM MODULE | 4 GB | MULTI BANK PAGE BURST | Unbuffered,Single Rank | No | 240DIMM | 133.35 mm | Yes with exemptions | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M386A4G40DM0-CPB | Samsung Electronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 288 | 0.18 ns | 15 | 2Gx4 | 8G | FBGA | 1066 MHz | 72 | No | 4A994.a | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | M386A4G40DM0-CPB | 2133 | 95 | 0 | DRAM Module | 32Gbyte | Socket | 16 | 36 | Quad | 4294967296 words | 4000000000 | 85 °C | UNSPECIFIED | DIMM | DIMM, DIMM288,33 | DIMM288,33 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | 288 | NOT SPECIFIED | 5.82 | Yes | LRDIMM | Commercial | 1.2 V | 1.2 | Obsolete | EAR99 | AUTO/SELF REFRESH; WD-MAX | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | compliant | 288 | R-XDMA-N288 | Not Qualified | 1.26 V | 1.2 V | OTHER | 1.14 V | 1 | SYNCHRONOUS | 5.46 mA | 4Gx72 | 3-STATE | 31.4 mm | 72 | 0.7 A | 309237645312 bit | COMMON | DDR DRAM MODULE | 8192 | FOUR BANK PAGE BURST | YES | 288RDIMM | 133.35 mm | 4.1 mm | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M471B5173EB0-YK0 | Samsung Electronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 204 | 0.225 ns | 11 | 512Mx8 | 4G | 78FBGA | 800 MHz | 64 | Yes | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | M471B5173EB0-YK0 | 1600 | 1.45/1.575 | 95 | 1.283/1.425 | 0 | DRAM Module | 4Gbyte | Socket | 8 | Single | 536870912 words | 512000000 | 570 | 85 °C | UNSPECIFIED | DIMM | DIMM, DIMM204,24 | DIMM204,24 | 30 | 67.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | 3.8(Max) | Obsolete | 204 | NOT SPECIFIED | 5.81 | Yes | USODIMM | 1.35 V | 1.35/1.5 | Obsolete | EAR99 | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.6 mm | compliant | 204 | R-XDMA-N204 | Not Qualified | 1.45 V | 1.35 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.97 mA | 512Mx64 | 3-STATE | 30.15 mm | 64 | 0.06 A | 34359738368 bit | COMMON | DDR DRAM MODULE | 8192 | SINGLE BANK PAGE BURST | YES | 204USODIMM | 67.6 mm | 3.8 mm | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M393A2K43BB 1-CRC | Samsung Electronics | Datasheet | 160 |
| Min: 1 Mult: 1 | NO | 288 | 0.175 ns | 17 | 1Gx8 | 8G | 1200 MHz | 72 | No | 4A994.a | 8473.30.11.40 | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | M393A2K43BB1-CRC | 2400 | 95 | 0 | DRAM Module | 16Gbyte | 16 | 18 | Dual | 2147483648 words | 2000000000 | 85 °C | UNSPECIFIED | DIMM | DIMM, DIMM288,33 | DIMM288,33 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | NOT SPECIFIED | 5.72 | Yes | Commercial | 1.2 V | 1.2 | Active | EAR99 | AUTO/SELF REFRESH; WD-MAX | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.85 mm | compliant | R-XDMA-N288 | Not Qualified | 1.26 V | 1.2 V | OTHER | 1.14 V | 1 | SYNCHRONOUS | 2.54 mA | 2Gx72 | 3-STATE | 31.25 mm | 72 | 154618822656 bit | COMMON | DDR DRAM MODULE | 8192 | DUAL BANK PAGE BURST | YES | 288RDIMM | 133.35 mm | 3.9 mm | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M393A4K40BB0-CPB | Samsung Electronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 288 | 0.18 ns | 15 | 2Gx4 | 8G | FBGA | 1066 MHz | 72 | Yes | EAR99 | 8473.30.11.40 | SAMSUNG SEMICONDUCTOR INC | No Lead | Samsung Semiconductor | M393A4K40BB0-CPB | 18 | 1080 | 1.26 | 1.14 | DRAM Module | 32Gbyte | Double | Socket | 36 | Single | 4294967296 words | 4000000000 | 2780 | 85 °C | UNSPECIFIED | DIMM | DIMM, DIMM288,33 | DIMM288,33 | 31.25 | 133.35 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | 3.9(Max) | Obsolete | 288 | NOT SPECIFIED | 5.8 | Yes | Yes | DIM | RDIMM | 1.2 V | 1.2 | Active | EAR99 | AUTO/SELF REFRESH; WD-MAX | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.85 mm | compliant | 288 | R-XDMA-N288 | Not Qualified | 1.26 V | 1.2 V | OTHER | 1.14 V | 1 | SYNCHRONOUS | 4.99 mA | 4Gx72 | 3-STATE | 31.4 mm | 72 | 0.43 A | 309237645312 bit | No | COMMON | DDR DRAM MODULE | 8192 | DUAL BANK PAGE BURST | Yes | 288RDIMM | 133.35 mm | 3.9 mm | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No KVR13N9S8/4 | Kingston Technology | Datasheet | - | - | Min: 1 Mult: 1 | 13 Weeks | NO | 240 | 9 | 512Mx8 | 4G | FBGA | 64 | No | EAR99 | 8542.32.00.24 | KINGSTON TECHNOLOGY COMPANY INC | No Lead | Kingston Technology Company | KVR13N9S8/4 | 1333 | 1.575 | 85 | 1.425 | 0 | DRAM Module | 4Gbyte | Single | Socket | 8 | 8 | Single | 536870912 words | 512000000 | 85 °C | UNSPECIFIED | DIMM | DIMM, | 18.75 | 133.35 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Contact Manufacturer | PC3-10600 | 240 | 5.7 | No | DIM | DIMM | 1.5 V | 1.5 | Active | EAR99 | AUTO/SELF REFRESH; SEATED HGT-NOM | 8473.30.11.40 | CMOS | DUAL | NO LEAD | 1 | unknown | 240 | R-XDMA-N240 | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 512Mx64 | 30 mm | 64 | 4 | No | SYNCHRONOUS DRAM MODULE | MULTI BANK PAGE BURST | No | 240DIMM | 133.35 mm | Yes with exemptions | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M386A8K40BM1-CPB | Samsung Electronics | Datasheet | 400 | - | Min: 1 Mult: 1 | NO | 288 | 15 | 4Gx4 | 16G | FBGA | 72 | No | 4A994.a | 8473.30.11.40 | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | M386A8K40BM1-CPB | 2133 | 85 | 0 | DRAM Module | 64Gbyte | 16 | 36 | 8589934592 words | 8000000000 | UNSPECIFIED | DIMM | DIMM, | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | NOT SPECIFIED | 5.82 | Yes | Commercial | 1.2 V | 1.2 | LTB | EAR99 | AUTO/SELF REFRESH; WD-MAX | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.85 mm | compliant | R-XDMA-N288 | 1.26 V | 1.14 V | 1 | SYNCHRONOUS | 8Gx72 | 31.4 mm | 72 | 618475290624 bit | DDR DRAM MODULE | FOUR BANK PAGE BURST | YES | 288RDIMM | 133.35 mm | 3.9 mm | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M391A2K43BB1-CRC | Samsung Electronics | Datasheet | 369 | - | Min: 1 Mult: 1 | NO | 288 | 17 | 1Gx8 | 8G | 78FBGA | 72 | Yes | EAR99 | 8473.30.51.00 | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | M391A2K43BB1-CRC | 2400 | 1.26 | 1.14 | DRAM Module | 16Gbyte | Double | Socket | 16 | 18 | Dual | 2147483648 words | 2000000000 | 1224 | UNSPECIFIED | DIMM | DIMM, | 31.25 | 133.35 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | 3.9(Max) | Active | 288 | 5.73 | No | DIM | UDIMM | 1.2 V | 1.2 | Active | EAR99 | AUTO/SELF REFRESH; WD-MAX | CMOS | DUAL | NO LEAD | 1 | 0.85 mm | compliant | 288 | R-XDMA-N288 | 1.26 V | 1.14 V | 1 | SYNCHRONOUS | 2Gx72 | 31.4 mm | 72 | 154618822656 bit | No | DDR DRAM MODULE | DUAL BANK PAGE BURST | Yes | 288UDIMM | 133.35 mm | 3.9 mm | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M386A8K40BM1-CRC | Samsung Electronics | Datasheet | 1687 | - | Min: 1 Mult: 1 | NO | 288 | 15 | 4Gx4 | 16G | FBGA | 72 | 72(b) | No | 4A994.a | 8473.30.11.40 | SAMSUNG SEMICONDUCTOR INC | DRAM Module | Samsung Semiconductor | M386A8K40BM1-CRC | 2400(MHz) | 2400 | 95 | 0 | DRAM Module | 64Gbyte | Socket | 36 | 16 | 36 | Quad | 8589934592 words | 8000000000 | 1.2(V) | 0C to 85C | 95C | 0C | Commercial | UNSPECIFIED | DIMM | DIMM, | RECTANGULAR | MICROELECTRONIC ASSEMBLY | LRDIMM | Obsolete | 288 | No | 5.81 | LRDIMM | Commercial | 1.2 V | 64GBYTE(b) | 1.2 | LTB | EAR99 | AUTO/SELF REFRESH; WD-MAX | CMOS | DUAL | NO LEAD | 1 | 0.85 mm | compliant | 288 | R-XDMA-N288 | 1.26 V | 1.14 V | 1 | SYNCHRONOUS | 8Gx72 | 31.4 mm | 72 | 618475290624 bit | DDR DRAM MODULE | FOUR BANK PAGE BURST | YES | 288RDIMM | 133.35 mm | 3.9 mm | Yes with exemptions | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No KVR16LN11/4 | Kingston Technology | Datasheet | 17 |
| Min: 1 Mult: 1 | 4 Weeks, 2 Days | NO | 0.10 | 240 | 11 | 512Mx8 | 4G | FBGA | 64 | No | EAR99 | 8473.30.11.40 | KINGSTON TECHNOLOGY COMPANY INC | No Lead | Kingston Technology Company | KVR16LN11/4 | 1600 | 1.45/1.575 | 85 | 4GB | 4GB | 1.28/1.425 | 0 | ValueRAM | DRAM Module | 4Gbyte | Single | Socket | 8 | Single | 536870912 words | 512000000 | 85 °C | UNSPECIFIED | DIMM | DIMM, | 30 | 133.35 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Contact Manufacturer | DIMM | PC3-12800 | 240 | 240 | 5.68 | DIM | DIMM | 1.35 V | 1.35/1.5 | e4 | Active | EAR99 | ValueRAM | GOLD | PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM | 8473.30.11.40 | CMOS | DUAL | NO LEAD | 1 | unknown | 240 | R-XDMA-N240 | 1.45 V | OTHER | 1.28 V | 240-pin DIMM | 1.35 V, 1.5 V | 1 | 1600MHz | SYNCHRONOUS | 512Mx64 | 30 mm | 64 | 34359738368 bit | DDR DRAM MODULE | 4 GB | MULTI BANK PAGE BURST | Unbuffered | 240DIMM | 133.35 mm | Yes with exemptions | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No KVR16LN11/8 | Kingston Technology | Datasheet | 31 |
| Min: 1 Mult: 1 | NO | 240 | 11 | 512Mx8 | 4G | FBGA | 64 | No | EAR99 | 8473.30.11.40 | KINGSTON TECHNOLOGY COMPANY INC | No Lead | Kingston Technology Company | KVR16LN11/8 | 800 | 1.45/1.575 | 85 | 8GB | 8GB | 1.28/1.425 | 0 | ValueRAM | DRAM Module | 8Gbyte | Double | Socket | 16 | Dual | 1073741824 words | 1000000000 | 85 °C | UNSPECIFIED | DIMM | DIMM-240 | 30 | 133.35 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Contact Manufacturer | PC3L-12800 | 240 | 240 | 5.21 | Yes | DIM | DIMM | 1.35 V | 1.35/1.5 | Active | EAR99 | ValueRAM | ALSO OPERATES AT 1.5V ; PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM | 8473.30.11.40 | CMOS | DUAL | NO LEAD | 1 | compliant | 240 | R-XDMA-N240 | 1.45 V | OTHER | 1.28 V | 240-pin DIMM | 1.35 V, 1.5 V | 1 | 1600MHz | SYNCHRONOUS | 1Gx64 | 30 mm | 64 | 68719476736 bit | No | DDR DRAM MODULE | 8 GB | MULTI BANK PAGE BURST | Unbuffered | Yes | 240DIMM | 133.35 mm | Yes with exemptions | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M378A5143DB0-CPB | Samsung Electronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 288 | 0.18 ns | 15 | 512Mx8 | 4G | 78FBGA | 1066 MHz | 64 | No | 4A994.a | 8542.32.00.71 | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | M378A5143DB0-CPB | 2133 | 85 | 0 | DRAM Module | 4Gbyte | Surface Mount | 8 | Single | 536870912 words | 512000000 | 85 °C | UNSPECIFIED | DIMM | DIMM, DIMM288,33 | DIMM288,33 | 11 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | 7.5 | Active | 78 | 5.74 | Yes | FBGA | Commercial | 1.2 V | 1.2 | Obsolete | EAR99 | AUTO/SELF REFRESH; WD-MAX | CMOS | DUAL | NO LEAD | 1 | compliant | 78 | R-XDMA-N288 | Not Qualified | 1.26 V | 1.2 V | OTHER | 1.14 V | 1 | SYNCHRONOUS | 1.18 mA | 512Mx64 | 3-STATE | 31.4 mm | 64 | 0.06 A | 34359738368 bit | COMMON | DDR DRAM MODULE | 8192 | SINGLE BANK PAGE BURST | YES | 288UDIMM | 133.35 mm | 2.7 mm | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M378A2K43BB1-CPB | Samsung Electronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 288 | 15 | 1Gx8 | 8G | 78FBGA | 64 | No | EAR99 | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | M378A2K43BB1-CPB | 2133 | 1.26 | 1.14 | DRAM Module | 16Gbyte | Socket | 16 | Dual | 2147483648 words | 2000000000 | 984 | UNSPECIFIED | DIMM | DIMM, | 31.25 | 133.35 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | 4.1(Max) | End Of Life | 288 | 5.73 | UDIMM | 1.2 V | 1.2 | LTB | EAR99 | AUTO/SELF REFRESH; WD-MAX | CMOS | DUAL | NO LEAD | 1 | 0.85 mm | compliant | 288 | R-XDMA-N288 | 1.26 V | 1.14 V | 1 | SYNCHRONOUS | 2Gx64 | 31.4 mm | 64 | 137438953472 bit | DDR DRAM MODULE | DUAL BANK PAGE BURST | YES | 288UDIMM | 133.35 mm | 3.9 mm | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT16JSF25664HY-1G1D1 | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | NO | 204 | 7 | 128Mx8 | 1G | 64 | No | EAR99 | 8473.30.11.40 | MICRON TECHNOLOGY INC | No Lead | Micron Technology Inc | MT16JSF25664HY-1G1D1 | 1066 | 1.575 | 70 | 1.425 | 0 | DRAM Module | 2Gbyte | Double | Socket | 8 | 16 | Dual | 268435456 words | 256000000 | 1616 | 70 °C | UNSPECIFIED | DIMM | DIMM, | 30.15(Max) | 67.75(Max) | RECTANGULAR | MICROELECTRONIC ASSEMBLY | 3.8(Max) | Obsolete | SODIMM | PC3-12800 | 204 | 30 | 8.41 | Yes | Yes | DIM | SODIMM | Commercial | 1.5 V | 1.5 | e4 | Obsolete | EAR99 | Gold (Au) | AUTO/SELF REFRESH | 8542.32.00.36 | CMOS | ZIG-ZAG | NO LEAD | 260 | 1 | unknown | 204 | R-XZMA-N204 | Not Qualified | 1.575 V | COMMERCIAL | 1.425 V | 1 | SYNCHRONOUS | 256Mx64 | 64 | 17179869184 bit | No | DDR DRAM MODULE | 8K | DUAL BANK PAGE BURST | Yes | 204SODIMM | Yes with exemptions | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No XCCACE256-I | Xilinx Inc. | Datasheet | - | - | Min: 1 Mult: 1 | NO | 50 | CompactFlash® | 60°C | 1999 | Obsolete | 1 (Unlimited) | 50 | EAR99 | 8523.51.00.00 | UNSPECIFIED | UNSPECIFIED | 1 | 3.3V | 50 | 3.6V | COMMERCIAL | 3V | 256MB | 33MHz | 16MX16 | 16 | 256 Mb | SERIAL | 3.3mm | 42.8mm | 36mm | No | Non-RoHS Compliant | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No KVR16N11/8 | Kingston Technology | Datasheet | 4 |
| Min: 1 Mult: 1 | 4 Weeks, 2 Days | 11 | 512Mx8 | 4G | FBGA | 64 | No | EAR99 | 8473.30.11.40 | KINGSTON TECHNOLOGY COMPANY INC | No Lead | Kingston Technology Company | KVR16N11/8 | 1600 | 1.575 | 85 | 8GB | 1.425 | 0 | ValueRAM | DRAM Module | 8Gbyte | Double | Socket | 8 | 16 | Dual | DIMM-240 | 30 | 133.35 | Contact Manufacturer | PC3-12800 | 240 | 240 | 5.63 | No | No | DIM | DIMM | 1.5 | Active | EAR99 | ValueRAM | 8473.30.11.40 | unknown | 240 | 240-pin DIMM | 1.5V | 1600MHz | 1Gx64 | No | 8 GB | Unbuffered | No | 240DIMM | Yes with exemptions | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No KVR1333D3N9/8G | Kingston Technology | Datasheet | - | - | Min: 1 Mult: 1 | 4 Weeks, 2 Days | YES | 240 | 0.255 ns | 9 | 512Mx8 | 4G | FBGA | 667 MHz | 64 | No | EAR99 | 8473.30.11.40 | KINGSTON TECHNOLOGY COMPANY INC | No Lead | Kingston Technology Company | KVR1333D3N9/8G | 1333 | 1.575 | 85 | 1.425 | 0 | DRAM Module | 8Gbyte | Double | Socket | 8 | 16 | Dual | 1073741824 words | 1000000000 | 85 °C | UNSPECIFIED | DIMM | DIMM, DIMM240,40 | DIMM240,40 | 30 | 133.35 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Contact Manufacturer | PC3-10600 | 240 | 5.69 | No | DIM | DIMM | 1.5 V | 1.5 | Active | EAR99 | PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM | 8473.30.11.40 | CMOS | UNSPECIFIED | NO LEAD | 1 | 1 mm | unknown | 240 | R-XXMA-N240 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 1Gx64 | 3-STATE | 30 mm | 64 | 68719476736 bit | No | COMMON | DDR DRAM MODULE | 8192 | MULTI BANK PAGE BURST | No | 240DIMM | 133.35 mm | Yes with exemptions | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M393A1G43DB0-CPB | Samsung Electronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 288 | 15 | 512Mx8 | 4G | FBGA | 72 | Yes | EAR99 | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | M393A1G43DB0-CPB | 2133 | 1.26 | 1.14 | DRAM Module | 8Gbyte | Double | Socket | 18 | Dual | 1073741824 words | 1000000000 | 1750 | UNSPECIFIED | DIMM | DIMM, | 31.25 | 133.35 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | 4.3(Max) | Active | 288 | NOT SPECIFIED | 5.71 | Yes | No | DIM | RDIMM | 1.2 V | 1.2 | Obsolete | EAR99 | AUTO/SELF REFRESH; WD-MAX | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.85 mm | compliant | 288 | R-XDMA-N288 | 1.26 V | 1.14 V | 1 | SYNCHRONOUS | 1Gx72 | 31.4 mm | 72 | 77309411328 bit | No | DDR DRAM MODULE | DUAL BANK PAGE BURST | Yes | 288RDIMM | 133.35 mm | 3.9 mm | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT18KSF51272HZ-1G4K1 | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | NO | 204 | 9 | 256Mx8 | 2G | 72 | Yes | EAR99 | MICRON TECHNOLOGY INC | No Lead | Micron Technology Inc | MT18KSF51272HZ-1G4K1 | 1333 | 1.45 | 70 | 1.283 | 0 | DRAM Module | 4Gbyte | Double | Socket | 8 | 18 | Dual | 536870912 words | 512000000 | 873 | 70 °C | UNSPECIFIED | DIMM | HALOGEN FREE, SODIMM-204 | 30.15(Max) | 67.75(Max) | RECTANGULAR | MICROELECTRONIC ASSEMBLY | 3.8(Max) | Active | PC3-10600 | 204 | 5.71 | Yes | DIM | SODIMM | Commercial | 1.35 V | 1.35 | Obsolete | EAR99 | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX | 8542.32.00.36 | CMOS | DUAL | NO LEAD | 1 | compliant | 204 | R-XDMA-N204 | 1.45 V | COMMERCIAL | 1.283 V | 1 | SYNCHRONOUS | 512Mx72 | 30.15 mm | 72 | 4 | No | DDR DRAM MODULE | 8K | DUAL BANK PAGE BURST | Yes | 204SODIMM | 67.6 mm | 3.8 mm | Yes with exemptions | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W332M72V-133SBI | Microsemi | Datasheet | - | - | Min: 1 Mult: 1 | YES | 208 | 5.5 ns | 3|2 | PBGA | 72 | Yes | 4A994.a | MICROSEMI CORP | Microsemi Corporation | W332M72V-133SBI | 133 | 3.6 | 85 | 3 | -40 | DRAM Module | 256Mbyte | Surface Mount | 4 | 5 | 33554432 words | 32000000 | 575 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | 3.2(Max) | 22.15(Max) | RECTANGULAR | GRID ARRAY | 16.15(Max) | Transferred | 208 | 30 | 5.37 | No | No | BGA | Industrial | 3.3 V | 3.3 | Unconfirmed | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | CMOS | BOTTOM | BALL | 225 | 1 | 1 mm | unknown | 208 | R-PBGA-B208 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 32Mx72 | 72 | 2415919104 bit | No | SYNCHRONOUS DRAM | 8K | FOUR BANK PAGE BURST | Yes | Supplier Unconfirmed |
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Package:Memory Cards
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Package:Memory Cards
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