The category is 'Memory Cards'
Memory Cards (25)
- All Manufacturers
- ECCN Code
- Organization
- Memory Width
- Number of Functions
- Part Status
- RoHS Status
- Supply Voltage-Max (Vsup)
- Supply Voltage-Min (Vsup)
- Surface Mount
- Terminal Form
- Terminal Position
- CAS Latency
- ECCN Code:
EAR99
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | CAS Latency | Chip Configuration | Chip Density (bit) | Chip Package Type | Data Bus Width (bit) | ECC Support | ECCN (US) | Ihs Manufacturer | Lead Shape | Manufacturer | Manufacturer Part Number | Max. Access Time (ns) | Maximum Clock Rate (MHz) | Maximum Operating Supply Voltage (V) | Maximum Operating Temperature (°C) | Memory Types | Minimum Operating Supply Voltage (V) | Minimum Operating Temperature (°C) | Module | Module Density | Module Sides | Mounting | Number of Elements | Number of Chip Banks | Number of Chip per Module | Number of Ranks | Number of Words | Number of Words Code | Operating Current (mA) | Operating Temperature (Max.) | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PC Type | PCB changed | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Schedule B | SPD EEPROM Support | Standard Package Name | Supplier Package | Supplier Temperature Grade | Supply Voltage-Nom (Vsup) | Typical Operating Supply Voltage (V) | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Organization | Seated Height-Max | Memory Width | Memory Density | Max Frequency | PLL | Parallel/Serial | Memory IC Type | Refresh Cycles | Access Mode | Self Refresh | Module Type | Height Seated (Max) | Length | Width | RoHS Status |
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![]() | Mfr Part No MT16KTF1G64AZ-1G4E1 | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | NO | 240 | 9 | 512Mx8 | 4G | 64 | No | EAR99 | MICRON TECHNOLOGY INC | No Lead | Micron Technology Inc | MT16KTF1G64AZ-1G4E1 | 1333 | 1.45/1.575 | 70 | 1.283/1.425 | 0 | DRAM Module | 8Gbyte | Double | Socket | 18 | Dual | 1073741824 words | 1000000000 | 1248 | 70 °C | UNSPECIFIED | DIMM | DIMM, | 30.5(Max) | 133.5(Max) | RECTANGULAR | MICROELECTRONIC ASSEMBLY | 4(Max) | Obsolete | DIMM | PC3-10600 | 240 | 5.67 | Yes | DIM | UDIMM | Commercial | 1.35 V | 1.35/1.5 | e4 | Obsolete | EAR99 | GOLD | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX | 8542.32.00.36 | CMOS | DUAL | NO LEAD | 1 | 1 mm | unknown | 240 | R-XDMA-N240 | 1.45 V | COMMERCIAL | 1.283 V | 1 | SYNCHRONOUS | 1Gx64 | 30.5 mm | 64 | 68719476736 bit | No | DDR DRAM MODULE | 8K | DUAL BANK PAGE BURST | Yes | 240UDIMM | 133.35 mm | 4 mm | Supplier Unconfirmed | ||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT18JDF1G72PDZ-1G6D1 | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | Socket | NO | 240 | 240 | 11 | 512Mx8 | 4G | 72 | Yes | EAR99 | MICRON TECHNOLOGY INC | No Lead | Micron Technology Inc | MT18JDF1G72PDZ-1G6D1 | 1600 | 1.575 | 70 | 1.425 | 0 | DRAM Module | 8Gbyte | Double | Socket | 18 | 8 | 18 | Dual | 1073741824 words | 1000000000 | 1863 | 70 °C | UNSPECIFIED | DIMM | DIMM, | 18.9(Max) | 133.5(Max) | RECTANGULAR | MICROELECTRONIC ASSEMBLY | 4(Max) | Obsolete | DIMM | PC3-12800 | 240 | NOT SPECIFIED | 5.66 | Compliant | Yes | 8473300002 | Yes | DIM | VLP RDIMM | Commercial | 1.5 V | 1.5 | Obsolete | EAR99 | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.36 | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1 mm | unknown | 240 | R-XDMA-N240 | 1.5 V | 1.575 V | COMMERCIAL | 1.425 V | 1.575 V | 1.425 V | 1 | SYNCHRONOUS | 1Gx72 | 18.9 mm | 72 | 77309411328 bit | 1.6 GHz | Yes | DDR DRAM MODULE | 8K | DUAL BANK PAGE BURST | Yes | 240RDIMM | 133.35 mm | Yes with exemptions | ||||||||||||||||||||
![]() | Mfr Part No W3H128M72E-667NBM | Microsemi | Datasheet | - | - | Min: 1 Mult: 1 | YES | 208 | 0.5 ns | 6 | 1.8G | PBGA | 72 | Yes | 4A994.a | MICROSEMI CORP | Microsemi Corporation | W3H128M72E-667NBM | 1.25 | 667 | 1.9 | 125 | 1.7 | -55 | DRAM Module | 1Gbyte | Surface Mount | 8 | 5 | 134217728 words | 128000000 | 1375 | 125 °C | -55 °C | PLASTIC/EPOXY | BGA | BGA, | 3.94(Max) | 22.1(Max) | RECTANGULAR | GRID ARRAY | 16.1(Max) | Transferred | BGA | 208 | 5.43 | No | No | BGA | Military | 1.8 V | 1.8 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 208 | R-PBGA-B208 | Not Qualified | 1.9 V | MILITARY | 1.7 V | 1 | SYNCHRONOUS | 128Mx72 | 72 | 9663676416 bit | No | DDR DRAM | MULTI BANK PAGE BURST | Yes | Supplier Unconfirmed | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W332M64V-100SBI | Microsemi | Datasheet | - | - | Min: 1 Mult: 1 | YES | 208 | 7 ns | 3|2 | 512M | PBGA | 64 | No | 4A994.a | MICROSEMI CORP | Microsemi Corporation | W332M64V-100SBI | 7 | 100 | 3.6 | 85 | 3 | -40 | DRAM Module | 256Mbyte | Surface Mount | 4 | 4 | 33554432 words | 32000000 | 460 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | 2.27(Max) | 22.15(Max) | RECTANGULAR | GRID ARRAY | 13.15(Max) | Transferred | BGA | 208 | 30 | 5.37 | No | No | BGA | Industrial | 3.3 V | 3.3 | No | Unconfirmed | EAR99 | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED | 8542.32.00.36 | CMOS | BOTTOM | BALL | 225 | 1 | 1 mm | unknown | 208 | R-PBGA-B208 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 32Mx64 | 2.77 mm | 64 | 2147483648 bit | No | SYNCHRONOUS DRAM | 8K | MULTI BANK PAGE BURST | Yes | 22.15 mm | 13.15 mm | ||||||||||||||||||||||||||||||||
![]() | Mfr Part No XCCACE128-I | Xilinx Inc. | Datasheet | - | - | Min: 1 Mult: 1 | NO | CompactFlash® | 60°C | 1999 | Obsolete | 1 (Unlimited) | 50 | EAR99 | 8542.39.00.01 | UNSPECIFIED | UNSPECIFIED | 1 | 3.3V | 50 | R-XXMA-X50 | Not Qualified | 3.6V | COMMERCIAL | 3V | 128MB | SYNCHRONOUS | 33MHz | 8MX16 | 16 | 134217728 bit | SERIAL | 3.3mm | 42.8mm | 36mm | Non-RoHS Compliant |
MT16KTF1G64AZ-1G4E1
Micron Technology
Package:Memory Cards
Price: please inquire
MT18JDF1G72PDZ-1G6D1
Micron Technology
Package:Memory Cards
Price: please inquire
W3H128M72E-667NBM
Microsemi
Package:Memory Cards
Price: please inquire
W332M64V-100SBI
Microsemi
Package:Memory Cards
Price: please inquire
XCCACE128-I
Xilinx Inc.
Package:Memory Cards
Price: please inquire
