The category is 'Memory - Modules'
Memory - Modules (5402)
- All Manufacturers
- Reach Compliance Code
- Ihs Manufacturer
- Part Life Cycle Code
- Organization
- Terminal Position
- Memory IC Type
- Memory Width
- Terminal Form
- Memory Density
- Surface Mount
- JESD-30 Code
- ECCN Code
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency (fc) | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Operating Temperature | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No CSNP1GCR01-AOW | Creat Storage World | Datasheet | - | - | Min: 1 Mult: 1 | 50MHz | Tray | true | -40℃~+85℃ | 2.7V~3.6V | 1Gbit | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F010B-70JF | Intel Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | INTEL CORP | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Active | 5 V | NOR TYPE | QUAD | J BEND | 1 | 1.27 mm | compliant | R-PQCC-J32 | 5.5 V | 4.5 V | ASYNCHRONOUS | 0.04 mA | 128KX8 | 3-STATE | 3.556 mm | 8 | 0.000005 A | 1048576 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 0.00007 ms | 20 | YES | YES | YES | 8 | 16K | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||
| Mfr Part No AM29LV200BB-70EI | AMD | Datasheet | 8 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | ADVANCED MICRO DEVICES INC | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; CAN ALSO BE CONFIGURED AS 128K X 16 | 8542.32.00.51 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX16 | 1.2 mm | 16 | 0.000005 A | 2097152 bit | PARALLEL | FLASH | 3 V | 1000000 Write/Erase Cycles | 20 | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | BOTTOM | 18.4 mm | 12 mm | |||||||||||||||||||
| Mfr Part No EN25QH64A-104HIP | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 104 MHz | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | SQUARE | SMALL OUTLINE | Active | Yes | 3 V | EAR99 | NOR TYPE | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | S-PDSO-G8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.035 mA | 8MX8 | 3-STATE | 2.2 mm | 8 | 0.00002 A | 67108864 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 5.275 mm | 5.275 mm | |||||||||||||||||||||||||||
| Mfr Part No EN25QH16B-104HIP | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 104 MHz | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP-8 | SQUARE | SMALL OUTLINE | Active | Yes | 3 V | EAR99 | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | S-PDSO-G8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 2MX8 | 2.2 mm | 8 | 16777216 bit | SERIAL | FLASH | 3 V | 5.275 mm | 5.275 mm | |||||||||||||||||||||||||||||||||||||
| Mfr Part No THGBMJG6C1LBAB7 | KIOXIA | Datasheet | - |
| Min: 1 Mult: 1 | YES | KIOXIA HOLDINGS CORP | 8589934592 words | 8000000000 | 105 °C | -40 °C | VFBGA-153 | RECTANGULAR | Active | EAR99 | NOR TYPE | 8542.32.00.51 | BOTTOM | BALL | 1 | unknown | R-PBGA-B | 3.6 V | INDUSTRIAL | 2.7 V | 8GX8 | 1 mm | 8 | 68719476736 bit | AEC-Q100 | FLASH CARD | 13 mm | 11.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No BL24C512B-PARC | BL(Shanghai Belling) | Datasheet | 24000 | - | Min: 1 Mult: 1 | Tape & Reel (TR) | true | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No BL24C256AE0-PARC | BL(Shanghai Belling) | Datasheet | 8000 | - | Min: 1 Mult: 1 | Tape & Reel (TR) | true | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No K4U6E3S4AB-MGCL | Samsung | Datasheet | 8000 | - | Min: 1 Mult: 1 | Tray | true | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4UCE3Q4AA-MGCL | Samsung | Datasheet | 960 |
| Min: 1 Mult: 1 | Tape & Reel (TR) | true | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4FBE3D4HM-THCL | Samsung | Datasheet | 81 |
| Min: 1 Mult: 1 | Tape & Reel (TR) | true | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No P24C08C-SSH-MIR | PUYAï¼ | Datasheet | 16000 |
| Min: 1 Mult: 1 | Tape & Reel (TR) | true | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No JS28F640J3F75 | Micron Technology Inc | Datasheet | 9569 | - | Min: 1 Mult: 1 | YES | 56 | 75 ns | MICRON TECHNOLOGY INC | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSOP-56 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | Yes | 3 V | e3 | Yes | EAR99 | NOR TYPE | MATTE TIN | 8542.32.00.51 | DUAL | GULL WING | 1 | 0.5 mm | compliant | 56 | R-PDSO-G56 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.054 mA | 4MX16 | 1.2 mm | 16 | 0.00012 A | 67108864 bit | PARALLEL | FLASH | 2.7 V | 8 | NO | NO | YES | 64 | 128K | 4/8 words | YES | YES | 18.4 mm | 14 mm | ||||||||||||||||||||
| Mfr Part No EN25T16A-75QIP | Eon Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 8 | 75 MHz | EON SILICON SOLUTION INC | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, | RECTANGULAR | IN-LINE | Transferred | 3 V | EAR99 | NOR TYPE | 8542.32.00.51 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 2MX8 | 5.334 mm | 8 | 16777216 bit | SERIAL | FLASH | 2.7 V | 9.271 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No SST39VF1601C-70-4I-EKE | Silicon Storage Technology | Datasheet | 20 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | SILICON STORAGE TECHNOLOGY INC | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSOP-48 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP1 | 3 V | EAR99 | 8542.32.00.51 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 1MX16 | 1.2 mm | 16 | 16777216 bit | PARALLEL | FLASH | 2.7 V | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||
| Mfr Part No S29GL256P10FFI013 | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 100 ns | CYPRESS SEMICONDUCTOR CORP | 3 | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Transferred | Yes | 3 V | e1 | EAR99 | NOR TYPE | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 40 | R-PBGA-B64 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.11 mA | 16MX16 | 3-STATE | 1.4 mm | 16 | 0.000005 A | 268435456 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 256 | 128K | 8/16 words | YES | BOTTOM/TOP | YES | 13 mm | 11 mm | ||||||||||||||||||
| Mfr Part No M29W160ET70N6 | SGS Semiconductor Ltd | Datasheet | - | - | Min: 1 Mult: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No M29W160ET70N6 | Micron Technology Inc | Datasheet | 898 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 12 X 20 MM, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | No | 3 V | e0 | No | EAR99 | NOR TYPE | TIN LEAD | TOP BOOT BLOCK | 8542.32.00.51 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.2 mm | 16 | 0.0001 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 12 mm | |||||||||||||||||||
| Mfr Part No SDINBDV4-256G | Western Digital Corp | Datasheet | - | - | Min: 1 Mult: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No RC28F128J3F75 | Intel Corporation | Datasheet | 9 | - | Min: 1 Mult: 1 |
-
CSNP1GCR01-AOW
Creat Storage World
Package:Memory - Modules
Price: please inquire
-
AM29F010B-70JF
Intel Corporation
Package:Memory - Modules
Price: please inquire
-
AM29LV200BB-70EI
AMD
Package:Memory - Modules
Price: please inquire
-
EN25QH64A-104HIP
Elite Semiconductor Memory Technology Inc
Package:Memory - Modules
Price: please inquire
-
EN25QH16B-104HIP
Elite Semiconductor Memory Technology Inc
Package:Memory - Modules
Price: please inquire
-
THGBMJG6C1LBAB7
KIOXIA
Package:Memory - Modules
10.107111
-
BL24C512B-PARC
BL(Shanghai Belling)
Package:Memory - Modules
Price: please inquire
-
BL24C256AE0-PARC
BL(Shanghai Belling)
Package:Memory - Modules
Price: please inquire
-
K4U6E3S4AB-MGCL
Samsung
Package:Memory - Modules
Price: please inquire
-
K4UCE3Q4AA-MGCL
Samsung
Package:Memory - Modules
38.988510
-
K4FBE3D4HM-THCL
Samsung
Package:Memory - Modules
31.827667
-
P24C08C-SSH-MIR
PUYAï¼
Package:Memory - Modules
0.099582
-
JS28F640J3F75
Micron Technology Inc
Package:Memory - Modules
Price: please inquire
-
EN25T16A-75QIP
Eon Silicon Solution Inc
Package:Memory - Modules
Price: please inquire
-
SST39VF1601C-70-4I-EKE
Silicon Storage Technology
Package:Memory - Modules
Price: please inquire
-
S29GL256P10FFI013
Cypress Semiconductor
Package:Memory - Modules
Price: please inquire
-
M29W160ET70N6
SGS Semiconductor Ltd
Package:Memory - Modules
Price: please inquire
-
M29W160ET70N6
Micron Technology Inc
Package:Memory - Modules
Price: please inquire
-
SDINBDV4-256G
Western Digital Corp
Package:Memory - Modules
Price: please inquire
-
RC28F128J3F75
Intel Corporation
Package:Memory - Modules
Price: please inquire