The category is 'Memory - Modules'
Memory - Modules (5402)
- All Manufacturers
- Reach Compliance Code
- Ihs Manufacturer
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- ECCN Code
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width |
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 | Mfr Part No HM6-6616-8 | Harris Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 140 ns | HARRIS SEMICONDUCTOR | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP24,.3 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T24 | Not Qualified | MILITARY | 0.046 mA | 2KX8 | 8 | 0.0001 A | 16384 bit | MIL-STD-883 Class B (Modified) | OTP ROM | |||||||||||||||||||||||||||||||||||
| Mfr Part No HM6-6616-8 | Intersil Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 140 ns | INTERSIL CORP | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-XDIP-T24 | Not Qualified | MILITARY | 0.046 mA | 2KX8 | 8 | 0.0001 A | 16384 bit | MIL-STD-883 Class B (Modified) | OTP ROM | ||||||||||||||||||||||||||||||||||||
| Mfr Part No S29AL016D70BFI012 | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | ADVANCED MICRO DEVICES INC | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | FBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Transferred | Yes | 3 V | EAR99 | NOR TYPE | 8542.32.00.51 | BOTTOM | BALL | 0.8 mm | unknown | R-PBGA-B48 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 1MX16 | 1 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 8.15 mm | 6.15 mm | ||||||||||||||||||||
| Mfr Part No S29GL032A10FAIR20 | Spansion | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 100 ns | SPANSION INC | 3 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | 13 X 11 MM, FBGA-64 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | No | 3.3 V | e0 | No | 3A991.B.1.A | NOR TYPE | TIN LEAD | ALSO CONFIGURABLE 4M X 8 | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 1 mm | not_compliant | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.06 mA | 2MX16 | 1.4 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 64 | 64K | 4/8 words | YES | BOTTOM | YES | 13 mm | 11 mm | ||||||||||
| Mfr Part No S29GL032A10FAIR20 | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 100 ns | CYPRESS SEMICONDUCTOR CORP | 3 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | 13 X 11 MM, FBGA-64 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | No | 3.3 V | e0 | EAR99 | NOR TYPE | TIN LEAD | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | R-PBGA-B64 | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.06 mA | 2MX16 | 1.4 mm | 16 | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | BOTTOM/TOP | 13 mm | 11 mm | |||||||||||||||||||||||||
| Mfr Part No R29631ADM | Raytheon Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 75 ns | RAYTHEON SEMICONDUCTOR | 1024 words | 1000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | TIN LEAD | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-CDIP-T24 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.17 mA | 1KX8 | 8 | 8192 bit | PARALLEL | OTP ROM | |||||||||||||||||||||||||||||||||||
 | Mfr Part No MX27C4100MC-12 | Macronix International Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 120 ns | MACRONIX INTERNATIONAL CO LTD | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP40,.56 | SOP40,.56 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.71 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 40 | R-PDSO-G40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 256KX16 | 3-STATE | 3 mm | 16 | 0.0001 A | 4194304 bit | PARALLEL | COMMON | OTP ROM | 8 | 26.06 mm | 11.3 mm | ||||||||||||||||||||||||
| Mfr Part No IS29GL128-70FLA3H | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 70 ns | INTEGRATED SILICON SOLUTION INC | 134217728 words | 128000000 | 125 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | Yes | 3 V | e3 | EAR99 | TIN | 8542.32.00.51 | BOTTOM | BALL | 1 | 1 mm | compliant | R-PBGA-B64 | 3.6 V | AUTOMOTIVE | 2.7 V | ASYNCHRONOUS | 128MX1 | 1.4 mm | 1 | 134217728 bit | AEC-Q100 | PARALLEL | FLASH | 3 V | 13 mm | 11 mm | ||||||||||||||||||||||||||||||
| Mfr Part No S99-50019 | Spansion | Datasheet | 800 | - | Min: 1 Mult: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F004BB-70JF | Spansion | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | SPANSION INC | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | LEAD FREE, PLASTIC, MO-052AE, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | LCC | Yes | 5 V | e3 | Yes | EAR99 | NOR TYPE | MATTE TIN | BOTTOM BOOT BLOCK | 8542.32.00.51 | QUAD | J BEND | 260 | 1 | 1.27 mm | unknown | 40 | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.04 mA | 512KX8 | 3.556 mm | 8 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 5 V | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | BOTTOM | 13.97 mm | 11.43 mm | |||||||||||||
| Mfr Part No ES29LV800DT-70WGI | Excel (Suzhou) Semiconductor Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | EXCEL SEMICONDUCTOR INC | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | Yes | EAR99 | NOR TYPE | 8542.32.00.51 | BOTTOM | BALL | 260 | 0.8 mm | unknown | R-PBGA-B48 | Not Qualified | INDUSTRIAL | 0.03 mA | 512KX16 | 16 | 0.00001 A | 8388608 bit | PARALLEL | FLASH | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | ||||||||||||||||||||||||||
| Mfr Part No MZVL2512HCJQ-00B00 | Samsung Electronics Co. Ltd | Datasheet | 8004 | - | Min: 1 Mult: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No APS25608N-OBR-BD | AP Memory | Datasheet | 1375 |
| Min: 1 Mult: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MX25U8035ZUI-25G | Macronix International Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 40 MHz | MACRONIX INTERNATIONAL CO LTD | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSON | VSON, SOLCC8,.16,32 | SOLCC8,.16,32 | SQUARE | SMALL OUTLINE, VERY THIN PROFILE | Obsolete | SON | Yes | 1.8 V | EAR99 | NOR TYPE | ALSO CONFIGURABLE AS 8M X 1, 10 YEAR DATA RETENTION | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 8 | S-PDSO-N8 | Not Qualified | 2 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.022 mA | 2MX4 | 0.6 mm | 4 | 0.000005 A | 8388608 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 4 mm | 4 mm | ||||||||||||||||||
| Mfr Part No SST45LF010-10-4C-SAE | Silicon Storage Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 10 MHz | SILICON STORAGE TECHNOLOGY INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOP | 4.90 X 6 MM, MS-012AA, LEAD FREE, SOIC-8 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Yes | 3.3 V | EAR99 | NOR TYPE | 8542.32.00.51 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.03 mA | 1MX1 | 1.75 mm | 1 | 0.000015 A | 1048576 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE | 4.9 mm | 3.9 mm | |||||||||||||||||||||||
| Mfr Part No K9F2816Q0C-HCB0 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 63 | 40 ns | SAMSUNG SEMICONDUCTOR INC | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | 1.8 V | EAR99 | SLC NAND TYPE | 8542.32.00.51 | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B63 | Not Qualified | COMMERCIAL | 0.015 mA | 8MX16 | 16 | 0.00005 A | 134217728 bit | PARALLEL | FLASH | NO | NO | YES | 1K | 8K | 256 words | YES | ||||||||||||||||||||||||||||||||
 | Mfr Part No SST37VF040-70-3C-PHE | Silicon Storage Technology | Datasheet | 400 | - | Min: 1 Mult: 1 | NO | 32 | 70 ns | SILICON STORAGE TECHNOLOGY INC | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | Transferred | DIP | Yes | 3 V | e3 | EAR99 | NOR TYPE | MATTE TIN | 8542.32.00.51 | DUAL | THROUGH-HOLE | 260 | 1 | 2.54 mm | unknown | 32 | R-PDIP-T32 | Not Qualified | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 512KX8 | 5.08 mm | 8 | 0.000015 A | 4194304 bit | PARALLEL | FLASH | 2.7 V | NO | NO | NO | 41.91 mm | 15.24 mm | |||||||||||||||||||||
| Mfr Part No SST39VF800A-70-4C-B3 | Silicon Storage Technology | Datasheet | - | - | Min: 1 Mult: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7C274-30JC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 30 ns | CYPRESS SEMICONDUCTOR CORP | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | No | 5 V | e0 | EAR99 | TIN LEAD | POWER SWITCHED PROM | 8542.32.00.71 | QUAD | J BEND | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.12 mA | 32KX8 | 3-STATE | 3.55 mm | 8 | 0.03 A | 262144 bit | PARALLEL | COMMON | OTP ROM | 12.5 V | 13.97 mm | 11.43 mm | |||||||||||||||||||||||
| Mfr Part No S29GL128M10TAIR10 | Spansion | Datasheet | - | - | Min: 1 Mult: 1 | YES | 56 | 100 ns | SPANSION INC | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | MO-142EC, TSOP-56 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP1 | No | 3.3 V | e0 | No | EAR99 | NOR TYPE | TIN LEAD | 8542.32.00.51 | DUAL | GULL WING | 260 | 1 | 0.5 mm | not_compliant | 56 | R-PDSO-G56 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.06 mA | 8MX16 | 1.2 mm | 16 | 0.000005 A | 134217728 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 256 | 64K | 4/8 words | YES | BOTTOM/TOP | YES | 18.4 mm | 14 mm |
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HM6-6616-8
Harris Semiconductor
Package:Memory - Modules
Price: please inquire
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HM6-6616-8
Intersil Corporation
Package:Memory - Modules
Price: please inquire
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S29AL016D70BFI012
AMD
Package:Memory - Modules
Price: please inquire
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S29GL032A10FAIR20
Spansion
Package:Memory - Modules
Price: please inquire
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S29GL032A10FAIR20
Cypress Semiconductor
Package:Memory - Modules
Price: please inquire
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R29631ADM
Raytheon Semiconductor
Package:Memory - Modules
Price: please inquire
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MX27C4100MC-12
Macronix International Co Ltd
Package:Memory - Modules
Price: please inquire
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IS29GL128-70FLA3H
Integrated Silicon Solution Inc
Package:Memory - Modules
Price: please inquire
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S99-50019
Spansion
Package:Memory - Modules
Price: please inquire
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AM29F004BB-70JF
Spansion
Package:Memory - Modules
Price: please inquire
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ES29LV800DT-70WGI
Excel (Suzhou) Semiconductor Co Ltd
Package:Memory - Modules
Price: please inquire
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MZVL2512HCJQ-00B00
Samsung Electronics Co. Ltd
Package:Memory - Modules
Price: please inquire
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APS25608N-OBR-BD
AP Memory
Package:Memory - Modules
3.144919
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MX25U8035ZUI-25G
Macronix International Co Ltd
Package:Memory - Modules
Price: please inquire
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SST45LF010-10-4C-SAE
Silicon Storage Technology
Package:Memory - Modules
Price: please inquire
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K9F2816Q0C-HCB0
Samsung Semiconductor
Package:Memory - Modules
Price: please inquire
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SST37VF040-70-3C-PHE
Silicon Storage Technology
Package:Memory - Modules
Price: please inquire
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SST39VF800A-70-4C-B3
Silicon Storage Technology
Package:Memory - Modules
Price: please inquire
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CY7C274-30JC
Cypress Semiconductor
Package:Memory - Modules
Price: please inquire
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S29GL128M10TAIR10
Spansion
Package:Memory - Modules
Price: please inquire