-

-

Min: 1

Mult: 1

YES

4

SILICON

4 A

MOTOROLA INC

CASE 466-02

1

150 °C

PLASTIC/EPOXY

CHIP CARRIER, R-PQCC-N4

RECTANGULAR

CHIP CARRIER

Transferred

EAR99

QUAD

NO LEAD

unknown

4

R-PQCC-N4

Not Qualified

SINGLE

ENHANCEMENT MODE

SOURCE

AMPLIFIER

N-CHANNEL

40 V

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

-

-

Min: 1

Mult: 1

NO

3

SILICON

3.5 A

MOTOROLA INC

1

METAL

CYLINDRICAL, O-MBCY-W3

ROUND

CYLINDRICAL

Obsolete

EAR99

BOTTOM

WIRE

unknown

O-MBCY-W3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

N-CHANNEL

TO-205AF

0.6 Ω

14 A

100 V

METAL-OXIDE SEMICONDUCTOR

-

-

Min: 1

Mult: 1

NO

3

SILICON

9 A

MOTOROLA INC

1

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Obsolete

EAR99

8541.29.00.95

SINGLE

THROUGH-HOLE

unknown

R-PSFM-T3

Not Qualified

SINGLE

ENHANCEMENT MODE

DRAIN

N-CHANNEL

TO-220AB

0.4 Ω

200 V

METAL-OXIDE SEMICONDUCTOR

75 W

-

-

Min: 1

Mult: 1

NO

3

SILICON

1

0.03 A

MOTOROLA INC

150 °C

PLASTIC/EPOXY

CYLINDRICAL, O-PBCY-T3

ROUND

CYLINDRICAL

Obsolete

No

e0

EAR99

TIN LEAD

8541.21.00.75

BOTTOM

THROUGH-HOLE

unknown

O-PBCY-T3

Not Qualified

SINGLE

DEPLETION MODE

AMPLIFIER

N-CHANNEL

TO-226AA

JUNCTION

1 pF

ULTRA HIGH FREQUENCY BAND

0.35 W

16 dB

-

-

Min: 1

Mult: 1

NO

MOTOROLA INC

150 °C

Obsolete

No

e0

EAR99

Tin/Lead (Sn/Pb)

unknown

N-CHANNEL

JUNCTION

0.31 W

-

-

Min: 1

Mult: 1

NO

1

MOTOROLA INC

175 °C

,

Obsolete

No

125 MHz

e0

EAR99

Tin/Lead (Sn/Pb)

unknown

SINGLE

NPN

0.6 W

0.2 A

-

-

Min: 1

Mult: 1

YES

2

SILICON

1

5 A

MOTOROLA INC

200 °C

CERAMIC, METAL-SEALED COFIRED

FLANGE MOUNT, R-CDFM-F2

RECTANGULAR

FLANGE MOUNT

Obsolete

EAR99

8541.29.00.75

DUAL

FLAT

unknown

R-CDFM-F2

Not Qualified

SINGLE

ENHANCEMENT MODE

SOURCE

AMPLIFIER

N-CHANNEL

65 V

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

140 W

-

-

Min: 1

Mult: 1

YES

1

MOTOROLA INC

150 °C

Obsolete

No

125 MHz

e0

EAR99

Tin/Lead (Sn/Pb)

unknown

SINGLE

NPN

0.3 W

0.1 A

250

-

-

Min: 1

Mult: 1

NO

3

SILICON

1

black

0.5 A

M12

149 g

zinc die-cast

MOTOROLA INC

adjustable

36mm

78mm

150 °C

PLASTIC/EPOXY

ROUND

CYLINDRICAL

Transferred

No

63mm

lever

e0

EAR99

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

8541.21.00.95

BOTTOM

THROUGH-HOLE

unknown

O-PBCY-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

N-CHANNEL

TO-92

5 Ω

60 V

METAL-OXIDE SEMICONDUCTOR

0.83 W

0.83 W

-

-

Min: 1

Mult: 1

YES

1

MOTOROLA INC

150 °C

Obsolete

No

400 MHz

e0

EAR99

Tin/Lead (Sn/Pb)

unknown

SINGLE

NPN

0.225 W

0.1 A

40

-

-

Min: 1

Mult: 1

YES

1500 V

8.75

MOTOROLA INC

Ø11.8 + Ø5 mm

20 A

12 Vmin

150 °C

Obsolete

No

at least 10000 switching cycles

ON-(OFF), SPST, non-locking

37.5*24*34/1000

e0

EAR99

Pushbutton switch series ASW with pusher

Tin/Lead (Sn/Pb)

(total) 68.7 mm

unknown

≤50 mΩ

≥100 (at Uisolation.dc=500 V) MΩ

N-CHANNEL

-25...+85

JUNCTION

0.225 W

pusher - 14 mm

34.3 mm

16 mm

-

-

Min: 1

Mult: 1

YES

1.56 V

222.10

MOTOROLA INC

160 A

allowable impulse (IFM) - 480 A

150 °C

Obsolete

1200 V

12 mA

No

31.5*25.2*24/100

e0

EAR99

power semiconductor diode module of the series МДД

Tin/Lead (Sn/Pb)

unknown

half-bridge

N-CHANNEL

JUNCTION

0.225 W

maximum allowable junction (Tjm) - 150 °C

29 (case) mm

94 mm

34

-

-

Min: 1

Mult: 1

YES

1

MOTOROLA INC

150 °C

Obsolete

No

650 MHz

e0

EAR99

Tin/Lead (Sn/Pb)

unknown

SINGLE

NPN

0.225 W

0.1 A

60

-

-

Min: 1

Mult: 1

YES

4

SILICON

2

32 A

MOTOROLA INC

CASE 375-04

200 °C

CERAMIC, METAL-SEALED COFIRED

FLANGE MOUNT, R-CDFM-F4

RECTANGULAR

FLANGE MOUNT

Obsolete

EAR99

8541.29.00.75

DUAL

FLAT

unknown

4

R-CDFM-F4

Not Qualified

COMMON SOURCE, 2 ELEMENTS

ENHANCEMENT MODE

SOURCE

AMPLIFIER

N-CHANNEL

0.15 Ω

65 V

METAL-OXIDE SEMICONDUCTOR

500 W

VERY HIGH FREQUENCY BAND

500 W

12 dB

-

-

Min: 1

Mult: 1

YES

1

MOTOROLA INC

150 °C

Obsolete

No

100 MHz

e0

EAR99

Tin/Lead (Sn/Pb)

unknown

SINGLE

NPN

0.25 W

0.2 A

120

-

-

Min: 1

Mult: 1

-

-

Min: 1

Mult: 1

YES

2

SILICON

20 A

MOTOROLA INC

1

175 °C

PLASTIC/EPOXY

SMALL OUTLINE, R-PSSO-G2

RECTANGULAR

SMALL OUTLINE

Transferred

140 ns

170 ns

e0

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED

8541.29.00.95

SINGLE

GULL WING

unknown

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

0.085 Ω

70 A

60 V

200 mJ

METAL-OXIDE SEMICONDUCTOR

60 W

80 pF

60 W

-

-

Min: 1

Mult: 1

NO

MOTOROLA INC

150 °C

,

Obsolete

EAR99

unknown

DARLINGTON

NPN

250 W

37 A

35

-

-

Min: 1

Mult: 1

Through Hole

24-DIP Module, 8 Leads

YES

15V

1

5.10

MOTOROLA INC

15000

0.5…5 mA/channel; total output - 0.5…10 mA

XP Power

Ф7 mm

PCB mounting, horizontal position

ZEC110 series encoder

5 V

150 °C

Obsolete

for determining speed and direction of rotation; angle of rotation

25…85 %

No

with flat F - 6mm; diameter - 6mm; length L - 8mm; material - metal

60601-1; 62368-1

100 MHz

32*29*18/1000

-40°C ~ 100°C (With Derating)

Tube

JMR10 (10W)

1.25" L x 0.80" W x 0.40" H (31.8mm x 20.3mm x 10.2mm)

e0

Active

EAR99

Isolated Module

Tin/Lead (Sn/Pb)

ITE (Commercial), Medical

10 W

12 (housing) mm

unknown

2

CB, CE, CSA, TUV, UKCA, UL

88%

5 kV

75V

18V

SINGLE

333mA, 333mA

without switch

-15V

NPN

20 detents, 20 pulses (20 PPR)

-10…+70 °C

0.25 W

360 °

0.2 A

180

Adjustable Output, Remote On/Off

15 (without housing) mm

11.7 (housing) mm

-

-

Min: 1

Mult: 1

NO

3

SILICON

1

green button Ф13 mm

1000 (50 Hz, 1 min) V

0.15 A

17.70

MOTOROLA INC

12 mm

5 A

AC: 250/ 125 V

100000 min

150 °C

PLASTIC/EPOXY

CYLINDRICAL, O-PBCY-T3

ROUND

CYLINDRICAL

Transferred

No

ON- (ON) SPDT 3P

50*30*30/500

e0

EAR99

Tin/Lead (Sn/Pb)

BOTTOM

THROUGH-HOLE

41 (total) mm

unknown

O-PBCY-T3

Not Qualified

25 (electrical) cycles/min max

30 mOhm max

SINGLE WITH BUILT-IN DIODE

100 (at Uinsp.dc = 500 V) MOhm min

ENHANCEMENT MODE

Micro switch series KW3 with button

SWITCHING

N-CHANNEL

-25...+85 °C

TO-226AA

7.5 Ω

60 V

METAL-OXIDE SEMICONDUCTOR

0.4 W

5 pF

44 mm

13 mm