The manufacturer is 'NTE ELECT'
- Manufacturer
- Manufacturer Part Number
- Ihs Manufacturer
- Number of Words
- Package Description
- Part Life Cycle Code
- Reach Compliance Code
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- Access Time-Max
- JESD-30 Code
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- All Manufacturers:
NTE ELECT
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Dielectric Material | Weight | Number of Terminals | Access Time-Max | Address Bus | Clock Freq | Ihs Manufacturer | Lead Free Status / RoHS Status | Manufacturer | Manufacturer Part Number | Mfr | Mounting | Number of I/O Lines | Number of Words | Number of Words Code | Operating Supply Voltage (Max) | Operating Supply Voltage (Min) | Operating Supply Voltage (Typ) | Operating Temp Range | Operating Temperature Classification | Operating Temperature-Max | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Product Status | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Voltage Rating AC | Voltage Rating DC | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Termination | ECCN Code | Type | Terminal Finish | Applications | Additional Feature | HTS Code | Capacitance | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Lead Spacing | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Power Line Protection | Supply Current-Max | Voltage - Breakdown (Min) | Power - Peak Pulse | Current - Peak Pulse (10/1000μs) | Access Time | Voltage - Clamping (Max) @ Ipp | Architecture | Voltage - Reverse Standoff (Typ) | Organization | Output Characteristics | Seated Height-Max | Unidirectional Channels | Memory Width | Density | Standby Current-Max | Memory Density | Capacitance @ Frequency | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Standby Voltage-Min | Access Mode | Features | Supply Current | Height | Height Seated (Max) | Length | Width | Ratings |
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![]() | Mfr Part No NTE4256 | NTE Electronics, Inc. | Datasheet | - | - | Min: 1 Mult: 1 | NTE ELECTRONICS INC | NTE Electronics | NTE4256 | , | Active | 5.68 | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NTE2114 | NTE Electronics, Inc. | Datasheet | 624 | - | Min: 1 Mult: 1 | NO | 18 | 300 ns | 10(b) | Not Required(MHz) | NTE ELECTRONICS INC | NTE Electronics | NTE2114 | Through Hole | 4 | 1K | 1000 | 5.5(V) | 4.5(V) | 5(V) | 0C to 70C | Commercial | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP18,.3 | DIP18,.3 | RECTANGULAR | IN-LINE | PDIP | Active | DIP | No | NOT SPECIFIED | 2.34 | Yes | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | NMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 18 | R-PDIP-T18 | Not Qualified | 5.25 V | 5 V | COMMERCIAL | 4.75 V | 1 | ASYNCHRONOUS | 0.1 mA | 300 | Not Required | 1KX4 | 3-STATE | 4 | 4096(Bit) | 0.1 A | 4096 bit | PARALLEL | COMMON | Asynchronous | 4(b) | STANDARD SRAM | 5 V | 100 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NTE65101 | NTE ELECT | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | Radial | NO | Polypropylene (PP), Metallized | 22 | 450 ns | NTE ELECTRONICS INC | -- | NTE Electronics | NTE65101 | 256 words | 256 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP22,.4 | DIP22,.4 | RECTANGULAR | IN-LINE | Active | DIP | 2.32 | No | 5 V | 900V | 2500V (2.5kV) | -55°C ~ 110°C | Bulk | MKP385 | 1.693 L x 0.846 W (43.00mm x 21.50mm) | ±5% | e0 | Active | -- | PC Pins | EAR99 | Tin/Lead (Sn/Pb) | DC Link, DC Filtering; High Frequency, Switching; High Pulse, DV/DT | 8542.32.00.41 | 0.2µF | SRAMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 22 | R-PDIP-T22 | Not Qualified | 1.476 (37.50mm) | 5.25 V | 5 V | COMMERCIAL | 4.75 V | ASYNCHRONOUS | 0.027 mA | 256X4 | 3-STATE | 4 | 0.00001 A | 1024 bit | PARALLEL | SEPARATE | STANDARD SRAM | 2 V | -- | 1.516 (38.50mm) | -- | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NTE6508 | NTE ELECT | Datasheet | - | - | Min: 1 Mult: 1 | 10(b) | Not Required(MHz) | NTE Electronics | NTE6508 | Through Hole | 1 | 1K | 5.5(V) | 4.5(V) | 5(V) | -40C to 85C | Industrial | PDIP | No | 16 | 1 | 300 | Not Required | 1024(Bit) | Asynchronous | 1(b) | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NTE4164 | NTE ELECT | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | DO-201AA, DO-27, Axial | NO | CASE-1 | 16 | 150 ns | NTE ELECTRONICS INC | NTE Electronics | NTE4164 | Microchip Technology | 65536 words | 64000 | 70 °C | Tape & Reel (TR) | PLASTIC/EPOXY | DIP | DIP, | RECTANGULAR | IN-LINE | Active | Active | 2.1 | 5 V | -65°C ~ 150°C (TJ) | Military, MIL-PRF-19500 | Zener | General Purpose | RAS ONLY REFRESH | NMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T16 | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | No | 209V | 1500W (1.5kW) | 4.6A | 328V | 185V | 64KX1 | 5.08 mm | 1 | 1 | 65536 bit | - | PAGE MODE DRAM | PAGE | 22 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NTE2117 | NTE Electronics, Inc. | Datasheet | 236 | - | Min: 1 Mult: 1 | NO | 16 | 200 ns | 7(b) | NTE ELECTRONICS INC | NTE Electronics | NTE2117 | Through Hole | 16384 words | 16000 | 5.5(V) | 4.5(V) | 5(V) | 0C to 70C | Commercial | 70 °C | PLASTIC/EPOXY | DIP | DIP, | RECTANGULAR | IN-LINE | DIP | Active | DIP | No | 2.12 | 12 V | EAR99 | DRAM | RAS ONLY REFRESH | 8542.32.00.02 | MOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 16 | R-PDIP-T16 | 13.2 V | COMMERCIAL | 10.8 V | 1 | ASYNCHRONOUS | 16KX1 | 5.08 mm | 1 | 16384(Bit) | 16384 bit | 200(ns) | PAGE MODE DRAM | PAGE | 35(mA) | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NTE2104 | NTE Electronics, Inc. | Datasheet | - | - | Min: 1 Mult: 1 | 16 | 72.574779 g | NTE Electronics | NTE2104 | Non-Compliant | 3.9 kB | 12.7 mm | 152.4 mm | 76.2 mm |
NTE4256
NTE Electronics, Inc.
Package:Memory
Price: please inquire
NTE2114
NTE Electronics, Inc.
Package:Memory
Price: please inquire
NTE65101
NTE ELECT
Package:Memory
Price: please inquire
NTE6508
NTE ELECT
Package:Memory
Price: please inquire
NTE4164
NTE ELECT
Package:Memory
Price: please inquire
NTE2117
NTE Electronics, Inc.
Package:Memory
Price: please inquire
NTE2104
NTE Electronics, Inc.
Package:Memory
Price: please inquire
