The manufacturer is 'Vishay'
- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- ECCN Code
- Rohs Code
- Polarity/Channel Type
- Surface Mount
- FET Technology
- Configuration
- Exterior Housing Material
- Operating Mode
- Number of Terminals
- All Manufacturers:
Vishay
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Surface Mount | Material | Housing material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Cable type | Case | Collector current | Colour | Date Of Intro | Drain Current-Max (ID) | Electrical mounting | Gate current | Gate-emitter voltage | Gross weight | Gross Weight | Heatsink shape | Ihs Manufacturer | Internal width | Kind of architecture | Kind of output | Material finishing | Mating part | Max. forward impulse current | Max. forward voltage | Max. load current | Max. off-state voltage | Mechanical mounting | Memory | Mounting | Noal Current | Number of 12bit A/D converters | Number of 12bit D/A converters | Number of comparators | Number of inputs/outputs | Number of wires | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Plate thickness | Pulsed collector current | Rohs Code | Semiconductor structure | Transport Package Size/Quantity | Transport packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of heatsink | Type of integrated circuit | Type of module | Version | Voltage class | Wire cross-section | Wire insulation color | Wire length | Operating temperature | Operating Temperature | JESD-609 Code | Pbfree Code | ECCN Code | Connector type | Type | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Number of contacts | Number of Contacts | Configuration | Operating Mode | Output current | Case Connection | Clock frequency | Topology | Family | Transistor Application | Polarity/Channel Type | Operating temperature range | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Load current | 2nd Connector Number of Positions Loaded | Feedback Cap-Max (Crss) | Connector pitch | Power Dissipation Ambient-Max | Saturation Current | Height | Length | Width |
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Mfr Part No SI7938DP-T1-GE3 | Vishay Intertechnologies | Datasheet | 9600 | - | Min: 1 Mult: 1 | 18 Weeks, 1 Day | YES | 6 | SILICON | 2 | 18.5 A | VISHAY INTERTECHNOLOGY INC | 150 °C | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | Yes | e3 | EAR99 | Matte Tin (Sn) | DUAL | C BEND | 260 | not_compliant | 40 | R-XDSO-C6 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | 0.0058 Ω | 80 A | 40 V | 88.2 mJ | METAL-OXIDE SEMICONDUCTOR | 46 W | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SI7478DP-T1-GE3 | Vishay Intertechnologies | Datasheet | - | - | Min: 1 Mult: 1 | 13 Weeks | YES | 5 | SILICON | 1 | 15 A | 0.80 | VISHAY INTERTECHNOLOGY INC | 3min | 150 °C | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | Yes | 40*40*35/500 | 0…+40 °C | e3 | EAR99 | Matte Tin (Sn) - annealed | DUAL | C BEND | 260 | compliant | 30 | R-XDSO-C5 | Not Qualified | 2 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | N-CHANNEL | 0.0075 Ω | 60 A | 60 V | 61 mJ | METAL-OXIDE SEMICONDUCTOR | 5.4 W | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SI7143DP-T1-GE3 | Vishay Intertechnologies | Datasheet | - | - | Min: 1 Mult: 1 | 18 Weeks | YES | Nylon 66 UL94V-0 | 5 | SILICON | 1 | interboard power cable (socket) series 1007 | 35 A | 1.91 | VISHAY INTERTECHNOLOGY INC | W-02 pitch 2.54mm | 2 | 150 °C | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | Yes | 48*32*27/10000 | 0.129 mm2 | red, black | 280 mm | e3 | EAR99 | C3 | Matte Tin (Sn) | DUAL | C BEND | 260 | compliant | 30 | R-XDSO-C5 | 2 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | 0…+80 °C | 0.01 Ω | 60 A | 30 V | 31.25 mJ | METAL-OXIDE SEMICONDUCTOR | 35.7 W | 2.54 mm | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SIR422DP-T1-GE3 | Vishay Intertechnologies | Datasheet | 9600 | - | Min: 1 Mult: 1 | YES | 5 | SILICON | 1 | 20.5 A | 4.00 | VISHAY INTERTECHNOLOGY INC | 150 °C | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | Yes | 37*39*57.5/1000 | e3 | EAR99 | Matte Tin (Sn) | DUAL | C BEND | 260 | not_compliant | 30 | R-XDSO-C5 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | 0.0066 Ω | 70 A | 40 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | 34.7 W | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SI7489DP-T1-GE3 | Vishay Intertechnologies | Datasheet | 7200 |
| Min: 1 Mult: 1 | 11 Weeks, 1 Day | YES | brush - graphite; conductor - copper; clamp - brass | 8 | SILICON | 1 | 28 A | 5.26 | VISHAY INTERTECHNOLOGY INC | 150 °C | -55 °C | PLASTIC/EPOXY | POWERPAK SO-8 | RECTANGULAR | SMALL OUTLINE | Active | Yes | 41*29*36/1000 | 315 ns | 55 ns | (L) - mm | e3 | EAR99 | graphite brush for collector motor with spring | Matte Tin (Sn) - annealed | DUAL | FLAT | 260 | (D) - 17 mm | compliant | 30 | R-PDSO-F8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | 0.041 Ω | 40 A | 100 V | 61 mJ | METAL-OXIDE SEMICONDUCTOR | 83 W | 1 | (H) - 8 mm | (W) - 14.4 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SIZF914DT-T1-GE3 | Vishay Intertechnologies | Datasheet | - | - | Min: 1 Mult: 1 | 20 Weeks | YES | 8 | SILICON | 2 | 40 A | VISHAY INTERTECHNOLOGY INC | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Active | Yes | 50 ns | 140 ns | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PDSO-N8 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | SOURCE | SWITCHING | N-CHANNEL | 0.0038 Ω | 130 A | 25 V | 20 mJ | METAL-OXIDE SEMICONDUCTOR | 26.6 W | 47 pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SI4160DY-T1-GE3 | Vishay Intertechnologies | Datasheet | 20000 |
| Min: 1 Mult: 1 | YES | 8 | SILICON | 1 | 25.4 A | VISHAY INTERTECHNOLOGY INC | 150 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | RECTANGULAR | SMALL OUTLINE | Active | Yes | e3 | EAR99 | Matte Tin (Sn) | DUAL | GULL WING | 260 | not_compliant | 30 | R-PDSO-G8 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | SWITCHING | N-CHANNEL | MS-012AA | 0.0049 Ω | 30 V | METAL-OXIDE SEMICONDUCTOR | 5.7 W | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IRF540PBF | Vishay Intertechnologies | Datasheet | 160 |
| Min: 1 Mult: 1 | NO | 3 | SILICON | 1 | 28 A | VISHAY INTERTECHNOLOGY INC | 175 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | Yes | e3 | Yes | EAR99 | MATTE TIN | AVALANCHE RATED | SINGLE | THROUGH-HOLE | not_compliant | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | SWITCHING | N-CHANNEL | TO-220AB | 0.077 Ω | 110 A | 100 V | 230 mJ | METAL-OXIDE SEMICONDUCTOR | 150 W | 120 pF | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SQJ418EP-T1_GE3 | Vishay Intertechnologies | Datasheet | - | - | Min: 1 Mult: 1 | 25 Weeks | YES | 4 | SILICON | 1 | 2016-07-19 | 48 A | VISHAY INTERTECHNOLOGY INC | 175 °C | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | Yes | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | unknown | NOT SPECIFIED | AEC-Q101 | R-PSSO-G4 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | N-CHANNEL | 0.014 Ω | 160 A | 100 V | 65 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRL640 | Vishay Intertechnologies | Datasheet | - | - | Min: 1 Mult: 1 | NO | 3 | SILICON | 1 | UFQFN32 | 17 A | 0.5 g | VISHAY INTERTECHNOLOGY INC | Cortex M0+ | 12kB SRAM | SMD | 1 | 1 | 1 | 27 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Obsolete | No | STM32 ARM microcontroller | -40...85°C | e0 | No | EAR99 | TIN LEAD | LOGIC LEVEL COMPATIBLE | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | 56MHz | STM32U0 | SWITCHING | N-CHANNEL | TO-220AB | 0.18 Ω | 68 A | 200 V | 580 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SIR626DP-T1-RE3 | Vishay Intertechnologies | Datasheet | - | - | Min: 1 Mult: 1 | 16 Weeks, 3 Days | YES | 5 | SILICON | 1 | 2017-03-22 | 100 A | VISHAY INTERTECHNOLOGY INC | 150 °C | -55 °C | PLASTIC/EPOXY | SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | Yes | 78 ns | 88 ns | EAR99 | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | R-PDSO-F5 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | 0.002 Ω | 200 A | 60 V | 125 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SI2318DS-T1-GE3 | Vishay Intertechnologies | Datasheet | - | - | Min: 1 Mult: 1 | YES | 3 | SILICON | 1 | 3 A | VISHAY INTERTECHNOLOGY INC | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | Yes | e3 | EAR99 | MATTE TIN | DUAL | GULL WING | 260 | compliant | 30 | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | SWITCHING | N-CHANNEL | TO-236AB | 0.045 Ω | 40 V | METAL-OXIDE SEMICONDUCTOR | 45 pF | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SQ1470AEH-T1_GE3 | Vishay Intertechnologies | Datasheet | 52800 | - | Min: 1 Mult: 1 | 15 Weeks | YES | 6 | SILICON | 1 | SKYPER® | 1.7 A | 28 g | VISHAY INTERTECHNOLOGY INC | IGBT driver | PCB | PLASTIC/EPOXY | SC-70, 6 PIN | RECTANGULAR | SMALL OUTLINE | Active | Yes | gate driver board | 1.7kV | -40...105°C | EAR99 | DUAL | GULL WING | NOT SPECIFIED | unknown | 50kHz | NOT SPECIFIED | AEC-Q101 | R-PDSO-G6 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | 20A | N-CHANNEL | 0.065 Ω | 30 V | METAL-OXIDE SEMICONDUCTOR | for medium and high power application | 40 pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SIUD403ED-T1-GE3 | Vishay Intertechnologies | Datasheet | - | - | Min: 1 Mult: 1 | 16 Weeks | YES | aluminium | 3 | SILICON | 1 | aluminium | 2017-03-22 | 0.4 A | 700 g | U | VISHAY INTERTECHNOLOGY INC | raw | for back plate | 150 °C | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-N3 | RECTANGULAR | SMALL OUTLINE | Active | 4.5mm | Yes | extruded | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | unknown | NOT SPECIFIED | R-PDSO-N3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | 1.25 Ω | 20 V | METAL-OXIDE SEMICONDUCTOR | 1.25 W | universal | 7 pF | 23.5mm | 50mm | 71.8mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRFL9110TRPBF | Vishay Intertechnologies | Datasheet | 92000 | - | Min: 1 Mult: 1 | YES | aluminium | 3 | SILICON | 1 | black | 1.1 A | 700 g | U | VISHAY INTERTECHNOLOGY INC | 13.3mm | anodized | for back plate | 150 °C | -55 °C | PLASTIC/EPOXY | SOT-223, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | TO-261AA | Yes | extruded | e3 | Yes | EAR99 | MATTE TIN | AVALANCHE RATED | 8541.29.00.95 | SINGLE | GULL WING | 260 | not_compliant | 10 | 4 | R-PSSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | TO-261AA | 1.2 Ω | 100 V | METAL-OXIDE SEMICONDUCTOR | 3.1 W | LED | 18 pF | 2 W | 1 | 17mm | 0.15m | 23.5mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SI4848DY-T1-E3 | Vishay Intertechnologies | Datasheet | 4000 |
| Min: 1 Mult: 1 | 17 Weeks, 1 Day | YES | 8 | SILICON | 1 | SEMIPACK1 | 2.7 A | screw | 150mA | 120 g | VISHAY INTERTECHNOLOGY INC | 2kA | 1.65V | 190A | 1.8kV | screw | 150 °C | -55 °C | PLASTIC/EPOXY | ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | Yes | double series | diode-thyristor | A59 | e3 | EAR99 | MATTE TIN | DUAL | GULL WING | 260 | compliant | 30 | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | N-CHANNEL | 0.085 Ω | 150 V | METAL-OXIDE SEMICONDUCTOR | 3 W | 95A | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IRF740PBF | Vishay Intertechnologies | Datasheet | 7361 |
| Min: 1 Mult: 1 | 9 Weeks, 3 Days | NO | 3 | SILICON | 1 | SEMIPACK1 | 10 A | screw | 100mA | 120 g | VISHAY INTERTECHNOLOGY INC | 2.25kA | 1.75V | 235A | 1.6kV | screw | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | Yes | double series | diode-thyristor | A22 | e3 | Yes | EAR99 | MATTE TIN | SINGLE | THROUGH-HOLE | not_compliant | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.55 Ω | 40 A | 400 V | 520 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | 119A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SISA12ADN-T1-GE3 | Vishay Intertechnologies | Datasheet | 7200 |
| Min: 1 Mult: 1 | 18 Weeks, 3 Days | YES | 5 | SILICON | 1 | MiniSKiiP® 3 | 75A | 25 A | Press-Fit | ±20V | 82 g | VISHAY INTERTECHNOLOGY INC | 1.2kV | screw | 150 °C | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Active | 150A | Yes | transistor/transistor | IGBT | EAR99 | DUAL | C BEND | unknown | S-PDSO-C5 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | IGBT three-phase bridge, | SWITCHING | N-CHANNEL | 0.0043 Ω | 80 A | 30 V | 11 mJ | METAL-OXIDE SEMICONDUCTOR | 28 W | for UPS, | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRFU1N60APBF | Vishay Intertechnologies | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | NO | 3 | SILICON | 1 | MiniSKiiP® 2 | 200A | 1.4 A | Press-Fit | ±20V | 55 g | VISHAY INTERTECHNOLOGY INC | 1.2kV | screw | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Active | 400A | Yes | transistor/transistor | IGBT | e3 | EAR99 | MATTE TIN | SINGLE | THROUGH-HOLE | 260 | compliant | 30 | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | IGBT half-bridge, | SWITCHING | N-CHANNEL | TO-251AA | 7 Ω | 5.6 A | 600 V | 93 mJ | METAL-OXIDE SEMICONDUCTOR | 36 W | for UPS, | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No SQJQ160E-T1_GE3 | Vishay Intertechnologies | Datasheet | - | - | Min: 1 Mult: 1 | 25 Weeks | YES | 4 | SILICON | 1 | SEMIPACK3 | 602 A | screw | 150mA | 410 g | VISHAY INTERTECHNOLOGY INC | 9kA | 1.6V | 1.8kV | screw | 175 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Active | Yes | double series | 119 ns | 57 ns | diode-thyristor | EAR99 | SINGLE | GULL WING | 260 | unknown | 40 | AEC-Q101 | R-PSSO-G4 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | N-CHANNEL | 0.00085 Ω | 655 A | 60 V | 288 mJ | METAL-OXIDE SEMICONDUCTOR | 600 W | 273A | 458 pF |
SI7938DP-T1-GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SI7478DP-T1-GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SI7143DP-T1-GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SIR422DP-T1-GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SI7489DP-T1-GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
1.064800
SIZF914DT-T1-GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SI4160DY-T1-GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
0.266200
IRF540PBF
Vishay Intertechnologies
Package:Transistors - Special Purpose
0.471900
SQJ418EP-T1_GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
IRL640
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SIR626DP-T1-RE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SI2318DS-T1-GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SQ1470AEH-T1_GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SIUD403ED-T1-GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
IRFL9110TRPBF
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SI4848DY-T1-E3
Vishay Intertechnologies
Package:Transistors - Special Purpose
0.508200
IRF740PBF
Vishay Intertechnologies
Package:Transistors - Special Purpose
0.441344
SISA12ADN-T1-GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
0.232320
IRFU1N60APBF
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
SQJQ160E-T1_GE3
Vishay Intertechnologies
Package:Transistors - Special Purpose
Price: please inquire
