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STMicroelectronics STGWA75H65DFB2
STGWA75H65DFB2
BCHA-STGWA75H65DFB2
4-SMD, No Lead
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Transistor IGBT Chip N-Channel 650V 75A 3-Pin TO-247 Tube
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Technical Specifications
- TypeParameterSelect All
Mounting Type
Surface Mount
Package / Case
Supplier Device Package
TO-247 Long Leads
Package
Tape & Reel (TR)
Base Product Number
SG-8101
Mfr
EPSON
Product Status
Active
Collector-Emitter Saturation Voltage
1.55
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247
Maximum Collector Emitter Voltage
650 V
Pd - Power Dissipation
375 W
Maximum Operating Temperature
+ 175 C
Unit Weight
0.215171 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
600
Continuous Collector Current at 25 C
115 A
Mounting Styles
Through Hole
Manufacturer
STMicroelectronics
Brand
STMicroelectronics
RoHS
Details
Collector- Emitter Voltage VCEO Max
650 V
Current-Collector (Ic) (Max)
115 A
Test Conditions
400V, 75A, 2.2Ohm, 15V
Operating Temperature
Series
Packaging
Tube
Size / Dimension
0.276 L x 0.197 W (7.00mm x 5.00mm)
Type
Subcategory
IGBTs
Voltage - Supply
Frequency
24.74 MHz
Frequency Stability
±15ppm
Output
CMOS
Pin Count
3
Function
Standby (Power Down)
Base Resonator
Crystal
Current - Supply (Max)
6.8mA (Typ)
Current - Supply (Disable) (Max)
1.1µA
Configuration
Single
Power Dissipation
357
Spread Spectrum Bandwidth
-
Input Type
Standard
Power - Max
357 W
Product Type
IGBT Transistors
Voltage - Collector Emitter Breakdown (Max)
650 V
Absolute Pull Range (APR)
-
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 75A
Continuous Collector Current
115
IGBT Type
Trench Field Stop
Gate Charge
207 nC
Current - Collector Pulsed (Icm)
225 A
Td (on/off) @ 25°C
28ns/100ns
Switching Energy
1.428mJ (on), 1.05mJ (off)
Reverse Recovery Time (trr)
88 ns
Product Category
IGBT Transistors
Height Seated (Max)
0.055 (1.40mm)
Ratings
-
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