Discrete Semiconductor Products (5381)

-

-

Min: 1

Mult: 1

YES

6

SILICON

INFINEON TECHNOLOGIES AG

Infineon Technologies AG

BCR48PN-E6327

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Obsolete

5.51

Yes

100 MHz

e3

EAR99

MATTE TIN

BUILT-IN BIAS RESISTOR RATIO IS 1

BIP General Purpose Small Signal

DUAL

GULL WING

unknown

R-PDSO-G6

Not Qualified

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

SWITCHING

NPN AND PNP

0.25 W

0.07 A

70

50 V

-

-

Min: 1

Mult: 1

Obsolete (Last Updated: 2 years ago)

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SOT-23-3 (TO-236)

3

SILICON

BC817

45 V

700 mV

500 mA

160

ROCHESTER ELECTRONICS LLC

Rochester Electronics LLC

OBSOLETE (Last Updated: 2 years ago)

CASE 318-08

BC817-25LT1

onsemi

NOT SPECIFIED

1

Bulk

PLASTIC/EPOXY

CASE 318-08, TO-236, 3 PIN

RECTANGULAR

SMALL OUTLINE

Active

SOT-23

Obsolete

30

5.61

Compliant

No

100 MHz

45 V

-

Tape and Reel

-

e0

No

TIN LEAD

150 °C

-55 °C

300 mW

DUAL

GULL WING

240

unknown

500 mA

100 MHz

3

R-PDSO-G3

COMMERCIAL

NPN

SINGLE

Single

300 mW

300 mW

SWITCHING

100 MHz

NPN

NPN

45 V

500 mA

160 @ 100mA, 1V

100nA (ICBO)

TO-236AB

700mV @ 50mA, 500mA

45 V

100 MHz

100MHz

50 V

5 V

0.5 A

160

45 V

Contains Lead

-

-

Min: 1

Mult: 1

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

PG-SOT23-3-11

6

SILICON

100mA

INFINEON TECHNOLOGIES AG

Infineon Technologies AG

BCR129SE6327

Infineon Technologies

1

2

150 °C

Bulk

PLASTIC/EPOXY

SMALL OUTLINE, R-PDSO-G6

RECTANGULAR

SMALL OUTLINE

Obsolete

Active

5.81

Yes

150 MHz

-

BUILT-IN BIAS RESISTOR

DUAL

GULL WING

compliant

R-PDSO-G6

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

250mW

SWITCHING

NPN

2 PNP - Pre-Biased (Dual)

120 @ 5mA, 5V

100nA (ICBO)

300mV @ 500µA, 10mA

50V

150MHz

0.1 A

120

10kOhms

-

50 V

-

-

Min: 1

Mult: 1

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BC847

Diodes Incorporated

Bipolar Small Signal

0.1(A)

50(V)

45(V)

100 mA

200

6(V)

3000

Diodes Incorporated

Diodes Incorporated

Surface Mount

1

-65C to 150C

Military

Tape & Reel (TR)

SOT-23

Active

No

Details

NPN

-65°C ~ 150°C (TJ)

Tape and Reel

-

Transistors

Si

300(MHz)

3

Single

70

Not Required(W)

310 mW

BJTs - Bipolar Transistors

NPN

200 @ 2mA, 5V

15nA

600mV @ 5mA, 100mA

45 V

30

300MHz

7

Bipolar Transistors - BJT

-

-

Min: 1

Mult: 1

Through Hole

TO-220-3

TO-220AB

SGP30N

41 A

Infineon Technologies

Bulk

Active

400V, 30A, 11Ohm, 15V

-55°C ~ 150°C (TJ)

-

Standard

250 W

600 V

2.4V @ 15V, 30A

NPT

140 nC

112 A

44ns/291ns

1.29mJ

-

-

Min: 1

Mult: 1

Surface Mount

YES

3

SILICON

1.1 x 2.9 x 1.5mm

TOSHIBA CORP

Toshiba America Electronic Components

2SA1162-GR(F)

50 V

150 mA

80 MHz

+125 °C

70

1

1

125 °C

PLASTIC/EPOXY

SMALL OUTLINE, R-PDSO-G3

RECTANGULAR

SMALL OUTLINE

SOT-346 (SC-59)

Obsolete

NOT SPECIFIED

5.6

Yes

Transistor Toshiba 2SA1162-GR(F) PNP Bipolar Transistor, 0.15 A, 50 V, 3-Pin SC-59

80 MHz

EAR99

LOW NOISE

8541.21.00.95

Other Transistors

DUAL

GULL WING

NOT SPECIFIED

unknown

3

R-PDSO-G3

SINGLE

AMPLIFIER

PNP

PNP

TO-236

0.15 W

0.15 A

200

50 V

0.3 V

7 pF

-

-

Min: 1

Mult: 1

5 Weeks

Production (Last Updated: 2 years ago)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

YES

3

DPAK

2

SILICON

NJVMJD45

onsemi

80 V

80 V

1 V

8 A

5 V

1800

90 MHz

ON SEMICONDUCTOR

onsemi

ACTIVE (Last Updated: 2 years ago)

369C

NJVMJD45H11RLG

8 A

+ 150 C

onsemi

- 55 C

1

SMD/SMT

1

150 °C

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

PLASTIC/EPOXY

ROHS COMPLIANT, PLASTIC, 369C, DPAK-3/2

RECTANGULAR

SMALL OUTLINE

NJVMJD45H11RLG-VF01

Active

20 W

Active

AEC-Q101

NOT SPECIFIED

0.72

Compliant

NPN

90 MHz

0.011288 oz

150°C (TJ)

Tape & Reel (TR)

MJD45H11

e3

Yes

EAR99

Tin (Sn)

150 °C

-55 °C

Transistors

1.75 W

Si

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

85 MHz

3

AEC-Q101

R-PSSO-G2

ON Semiconductor

PNP

Single

1.75 W

COLLECTOR

1.75 W

SWITCHING

Halogen Free

PNP

BJTs - Bipolar Transistors

PNP

80 V

8 A

60 @ 2A, 1V

10µA

1V @ 400mA, 8A

80 V

90 MHz

40MHz

-

20 W

5 V

8 A

40

8

80 V

Bipolar Transistors - BJT

No

Lead Free

-

-

Min: 1

Mult: 1

3

40 V

-250 mV

80

1

Compliant

SMD/SMT

150 °C

-65 °C

250 mW

PNP

40 V

2 A

250 mW

-40 V

-200 mA

-40 V

-6 V

150 °C

150 °C

1.1 mm

No SVHC

-

-

Min: 1

Mult: 1

1 Week

Surface Mount

TO-243AA

YES

PG-SOT89-4-2

3

SILICON

1 A

INFINEON TECHNOLOGIES AG

Infineon Technologies AG

BCX51E6327

Infineon Technologies

1

1

150 °C

Bulk

PLASTIC/EPOXY

SMALL OUTLINE, R-PSSO-F3

RECTANGULAR

SMALL OUTLINE

Obsolete

Active

40

5.07

Yes

125 MHz

150°C (TJ)

Automotive, AEC-Q101

e3

Yes

EAR99

Matte Tin (Sn)

Other Transistors

SINGLE

FLAT

260

compliant

R-PSSO-F3

Not Qualified

SINGLE

COLLECTOR

2 W

SWITCHING

PNP

100 @ 150mA, 2V

100nA (ICBO)

500mV @ 50mA, 500mA

45 V

125MHz

1 W

1 A

40

45 V

-

-

Min: 1

Mult: 1

NO

3

SILICON

ON SEMICONDUCTOR

ON Semiconductor

FGA180N33ATDTU

1

150 °C

PLASTIC/EPOXY

FLANGE MOUNT, R-PSFM-T3

RECTANGULAR

FLANGE MOUNT

Active

NOT SPECIFIED

5.22

Yes

362 ns

101 ns

e3

EAR99

Tin (Sn)

LOW CONDUCTION LOSS

SINGLE

THROUGH-HOLE

NOT SPECIFIED

compliant

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

POWER CONTROL

N-CHANNEL

180 A

330 V

-

-

Min: 1

Mult: 1

Through Hole

TO-247-3

3

PG-TO247-3-1

SGW20N

Infineon Technologies

600 V

600 V

2 V

40 A

36 A

36 A

240

Infineon

- 20 V, + 20 V

+ 150 C

Infineon Technologies

- 55 C

Through Hole

Bulk

SP000013771 SGW20N60HSFKSA1

179 W

Active

Details

400V, 20A, 16Ohm, 15V

1.340411 oz

-55°C ~ 150°C (TJ)

Tube

SGW20N60

150 °C

-55 °C

IGBTs

178 W

Si

Single

Single

Standard

178 W

Not Halogen Free

IGBT Transistors

600 V

36 A

600 V

3.15V @ 15V, 20A

36

NPT

100 nC

80 A

18ns/207ns

690µJ

IGBT Transistors

20.95 mm

15.9 mm

5.3 mm

-

-

Min: 1

Mult: 1

VESM-3

Toshiba

50 V

700

120 @ 1mA @ 5V

5 V

8000

Toshiba

+ 150 C

SMD/SMT

150 mW

Details

NPN

MouseReel

RN1113MFV

Transistors

Single

BJTs - Bipolar Transistors - Pre-Biased

50 V

100 mA

Bipolar Transistors - Pre-Biased

0.5 mm

1.2 mm

0.8 mm

-

-

Min: 1

Mult: 1

1 Week

Tin

Through Hole

TO-220-3

NO

3

PG-TO220-3-1

3

SILICON

1.2 kV

2.8 V

9.6 A

INFINEON TECHNOLOGIES AG

Infineon Technologies AG

IKP03N120H2

Infineon Technologies

1

150 °C

Bulk

PLASTIC/EPOXY

GREEN, PLASTIC, TO-220, 3 PIN

RECTANGULAR

FLANGE MOUNT

Obsolete

TO-220AB

Active

NOT SPECIFIED

5.25

Compliant

Yes

800V, 3A, 82Ohm, 15V

403 ns

16.1 ns

-40°C ~ 150°C (TJ)

-

e3

Yes

EAR99

Matte Tin (Sn)

150 °C

-40 °C

Insulated Gate BIP Transistors

62.5 W

SINGLE

THROUGH-HOLE

NOT SPECIFIED

compliant

3

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

Single

62.5 W

COLLECTOR

Standard

62.5 W

POWER CONTROL

Halogen Free

N-CHANNEL

1.2 kV

9.6 A

42 ns

TO-220AB

1200 V

62.5 W

2.8V @ 15V, 3A

9.6 A

-

1200 V

22 nC

9.9 A

9.2ns/281ns

290µJ

20 V

3.9 V

42 ns

No SVHC

-

-

Min: 1

Mult: 1

Through Hole

3

600 V

2.8 V

Compliant

600 V

Bulk

150 °C

-55 °C

60 W

16 A

Single

60 W

27 ns

2.8 V

16 A

8.77 mm

10.54 mm

4.69 mm

No

Lead Free

-

-

Min: 1

Mult: 1

Surface Mount

6-VSSOP, SC-88, SOT-363

SOT-363

200mA

Infineon Technologies

Bulk

Active

PNP

150°C (TJ)

-

250

330W

2 PNP Darlington (Dual)

100 @ 10mA, 1V

50nA (ICBO)

400mV @ 5mA, 50mA

40V

250

250MHz

200

-

-

Min: 1

Mult: 1

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

Bipolar RF

0.045(A)

0.03 A

13(V)

4 V

30mA

160

1.2(V)

INFINEON TECHNOLOGIES AG

Infineon Technologies AG

BFP740E6327

Infineon Technologies

Surface Mount

1

-65C to 150C

Military

Bulk

SOT-343

Obsolete

Active

No

5.8

Yes

NPN

150°C (TJ)

Tape and Reel

-

NPN

compliant

42000 MHz

3 +Tab

Single Dual Emitter

160

160mW

NPN

160 @ 25mA, 3V

27dB

4.7V

44

42GHz

45

0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz

31.5(dB)

-

-

Min: 1

Mult: 1

3

40 V

1 V

40

1

Compliant

250 ns

SMD/SMT

150 °C

-65 °C

250 mW

NPN

40 V

6 A

250 mW

35 ns

300 MHz

1 V

600 mA

300 MHz

75 V

6 V

150 °C

150 °C

1.1 mm

No SVHC

-

-

Min: 1

Mult: 1

YES

3

SILICON

SIEMENS A G

Siemens

BCX53-16E6327

1

150 °C

PLASTIC/EPOXY

SMALL OUTLINE, R-PSSO-F3

RECTANGULAR

SMALL OUTLINE

Transferred

5.39

125 MHz

EAR99

SINGLE

FLAT

unknown

R-PSSO-F3

Not Qualified

SINGLE

COLLECTOR

SWITCHING

PNP

1 A

100

80 V

0.5 V

1 W

-

-

Min: 1

Mult: 1

1 Week

Surface Mount

SC-70, SOT-323

YES

PG-SOT323-3-1

3

SILICON

100 mA

INFINEON TECHNOLOGIES AG

Infineon Technologies AG

BCR185WE6327

Infineon Technologies

1

1

Bulk

PLASTIC/EPOXY

SMALL OUTLINE, R-PDSO-G3

RECTANGULAR

SMALL OUTLINE

Obsolete

Active

40

5.43

Yes

200 MHz

Automotive, AEC-Q101

e3

EAR99

MATTE TIN

BUILT-IN BIAS RESISTOR RATIO IS 4.7

BIP General Purpose Small Signals

DUAL

GULL WING

260

compliant

R-PDSO-G3

Not Qualified

SINGLE WITH BUILT-IN RESISTOR

250 mW

SWITCHING

PNP

PNP - Pre-Biased

70 @ 5mA, 5V

100nA (ICBO)

300mV @ 500µA, 10mA

50 V

200 MHz

0.25 W

0.1 A

70

10 kOhms

47 kOhms

50 V

-

-

Min: 1

Mult: 1

YES

3

SILICON

ON SEMICONDUCTOR

ON Semiconductor

318-08

MMBT5401LT1

1

1

150 °C

-55 °C

PLASTIC/EPOXY

SMALL OUTLINE, R-PDSO-G3

RECTANGULAR

SMALL OUTLINE

Obsolete

SOT-23

30

6.85

100 MHz

e0

No

EAR99

Tin/Lead (Sn/Pb)

8541.21.00.95

Other Transistors

DUAL

GULL WING

235

not_compliant

3

R-PDSO-G3

Not Qualified

ON Semiconductor

SINGLE

SWITCHING

PNP

TO-236AB

0.225 W

0.5 A

50

150 V