The category is 'Transistors - FETs, MOSFETs - RF'
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Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Transistor Element Material | Base Product Number | Brand | Breakdown Voltage / V | Continuous Drain Current Id | Factory Pack QuantityFactory Pack Quantity | Forward Transconductance - Min | Id - Continuous Drain Current | Manufacturer | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | Number of Elements | Operating Temperature (Max.) | Package | Pd - Power Dissipation | Product Status | Rds On - Drain-Source Resistance | RoHS | Transistor Polarity | Unit Weight | Usage Level | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Voltage Rated | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Voltage - Rated DC | Current Rating (Amps) | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Operating Frequency | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Output Power | Current - Test | Transistor Application | Halogen Free | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Product Type | Transistor Type | Operating Temperature Range | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Gain | Max Output Power | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Input Capacitance | DS Breakdown Voltage-Min | Channel Type | Power - Output | FET Technology | Power Dissipation-Max (Abs) | Noise Figure | Nominal Vgs | Voltage - Test | Feedback Cap-Max (Crss) | Highest Frequency Band | Min Breakdown Voltage | Power Gain | Product Category | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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 | Mfr Part No MRF8S9200NR3 | NXP USA Inc. | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | OM-780-2 | YES | SILICON | 1 | 225°C | 70V | Tape & Reel (TR) | 2009 | e3 | Active | 3 (168 Hours) | 2 | EAR99 | Matte Tin (Sn) | ESD PROTECTED | 8541.29.00.75 | DUAL | FLAT | 260 | 940MHz | 40 | R-CDFP-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | 1.4A | AMPLIFIER | N-CHANNEL | LDMOS | 19.9dB | 70V | 58W | METAL-OXIDE SEMICONDUCTOR | 28V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MMBFJ310LT1G | ON Semiconductor | Datasheet | 11197 | - | Min: 1 Mult: 1 | 8 Weeks | ACTIVE (Last Updated: 1 day ago) | TO-236-3, SC-59, SOT-23-3 | YES | 3 | 1.437803g | 25V | 1 | Military grade | Tape & Reel (TR) | 2000 | e3 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 150°C | -55°C | 25V | 225mW | DUAL | GULL WING | 260 | 60mA | 40 | MMBFJ310 | 3 | Single | DEPLETION MODE | 225mW | 10mA | AMPLIFIER | Halogen Free | 25V | N-Channel JFET | 60mA | 25V | 12dB | JUNCTION | 10V | 2.5 pF | ULTRA HIGH FREQUENCY B | 940μm | 2.9mm | 1.3mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No BF998E6327HTSA1 | Infineon Technologies | Datasheet | 1381 | - | Min: 1 Mult: 1 | 4 Weeks | Tin | Surface Mount | TO-253-4, TO-253AA | 4 | 1 | Military grade | Tape & Reel (TR) | 2001 | e3 | yes | Not For New Designs | 1 (Unlimited) | 4 | EAR99 | 150°C | -55°C | 12V | 200mW | DUAL | GULL WING | 30mA | 45MHz | BF998 | 4 | SINGLE | 1 | DUAL GATE, DEPLETION MODE | SOURCE | 10mA | Not Halogen Free | N-Channel | 30mA | 8V | 28dB | 0.03A | 1.2pF | METAL-OXIDE SEMICONDUCTOR | 2.8dB | 1mm | 2.9mm | 1.3mm | No | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MMBFJ309LT1G | ON Semiconductor | Datasheet | 12530 | - | Min: 1 Mult: 1 | 8 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | TO-236-3, SC-59, SOT-23-3 | YES | 3 | 1.437803g | -25V | 1 | Military grade | Tape & Reel (TR) | 2006 | e3 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | -25V | DUAL | GULL WING | 260 | 30mA | 40 | MMBFJ309 | 3 | Single | DEPLETION MODE | 225mW | AMPLIFIER | Halogen Free | 25V | N-Channel JFET | 10mA | 25V | 5pF | JUNCTION | ULTRA HIGH FREQUENCY B | 1.016mm | 3.0226mm | 1.397mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MMBF5484 | ON Semiconductor | Datasheet | 52272 | - | Min: 1 Mult: 1 | 16 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | -25V | 1 | Tape & Reel (TR) | 2008 | e3 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | 8541.21.00.95 | 25V | 225mW | DUAL | GULL WING | 10mA | 400MHz | MBF5484 | Single | DEPLETION MODE | 225mW | 225mW | AMPLIFIER | N-Channel JFET | 5mA | -25V | JUNCTION | 4dB | 15V | 1 pF | 25V | 930μm | 2.92mm | 1.3mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No PD55003L-E | STMicroelectronics | Datasheet | 312 | - | Min: 1 Mult: 1 | 11 Weeks | ACTIVE (Last Updated: 7 months ago) | Surface Mount | 8-PowerVDFN | 8 | 1 | Tape & Reel (TR) | e3 | Active | 3 (168 Hours) | 5 | SMD/SMT | EAR99 | MATTE TIN | 150°C | -65°C | HIGH RELIABILITY | 12V | 14W | QUAD | 260 | 2.5A | 500MHz | 30 | PD55003 | 5 | S-PQCC-N5 | Single | ENHANCEMENT MODE | SOURCE | 50mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 2.5A | 15V | 19dB | 3W | 40V | 34pF | METAL-OXIDE SEMICONDUCTOR | 5 V | 12.5V | 880μm | 5mm | 5mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No PD54008L-E | STMicroelectronics | Datasheet | 4 | - | Min: 1 Mult: 1 | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | Surface Mount | 8-PowerVDFN | 8 | 1 | Tape & Reel (TR) | e3 | Active | 3 (168 Hours) | 5 | EAR99 | MATTE TIN | 150°C | -65°C | HIGH RELIABILITY | 3.1V | 26.7W | QUAD | 260 | 5A | 500MHz | 30 | PD54008 | 14 | S-PQCC-N5 | Single | ENHANCEMENT MODE | 26.7W | SOURCE | 200mA | AMPLIFIER | 25V | N-CHANNEL | LDMOS | 5A | 15V | 8W | 5A | 25V | METAL-OXIDE SEMICONDUCTOR | 7.5V | 15dB | No | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 2SK3557-6-TB-E | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | 9 Weeks | ACTIVE (Last Updated: 6 days ago) | Tin | TO-236-3, SC-59, SOT-23-3 | YES | 3 | 1.437803g | 1 | Tape & Reel (TR) | 2007 | e6 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | LOW NOISE | 8541.21.00.95 | 200mW | DUAL | GULL WING | 50mA | 1kHz | 2SK3557 | 3 | Single | DEPLETION MODE | 200mW | 1mA | AMPLIFIER | 15V | N-Channel JFET | 50mA | -15V | 0.05A | JUNCTION | 1dB | 5V | 1.1mm | 2.9mm | 1.5mm | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No PD55003-E | STMicroelectronics | Datasheet | 4800 | - | Min: 1 Mult: 1 | 25 Weeks | ACTIVE (Last Updated: 8 months ago) | Surface Mount | PowerSO-10 Exposed Bottom Pad | 3 | 1 | Tube | e3 | Active | 3 (168 Hours) | 2 | EAR99 | Matte Tin (Sn) - annealed | 165°C | -65°C | HIGH RELIABILITY | 40V | 31.7W | DUAL | GULL WING | 250 | 2.5A | 500MHz | 30 | PD55003 | 10 | R-PDSO-G2 | Single | ENHANCEMENT MODE | 31.7W | SOURCE | 50mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 2.5A | 20V | 3W | 40V | METAL-OXIDE SEMICONDUCTOR | 12.5V | 17dB | 3.5mm | 7.5mm | 9.4mm | No | No SVHC | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MMBF4416A | ON Semiconductor | Datasheet | 23760 | - | Min: 1 Mult: 1 | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | Tin | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | -35V | 1 | Tape & Reel (TR) | 2005 | e3 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | 8541.21.00.95 | 35V | 225mW | DUAL | GULL WING | 10mA | 400MHz | MMBF4416A | Single | DEPLETION MODE | 225mW | 5mA | AMPLIFIER | N-Channel JFET | 15mA | -35V | JUNCTION | 4dB | 15V | 0.8 pF | 1.04mm | 2.9mm | 1.3mm | No | No SVHC | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MMBF5485 | ON Semiconductor | Datasheet | 72000 | - | Min: 1 Mult: 1 | 42 Weeks | ACTIVE (Last Updated: 1 week ago) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | 1 | Tape & Reel (TR) | 2008 | e3 | yes | Active | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 150°C | -55°C | 8541.21.00.95 | 25V | 225mW | DUAL | GULL WING | 10mA | 400MHz | MMBF5485 | Single | DEPLETION MODE | 225mW | AMPLIFIER | 25V | N-Channel JFET | 10mA | -25V | METAL-OXIDE SEMICONDUCTOR | 4dB | 15V | 1 pF | 930μm | 2.92mm | 1.3mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No PD55008TR-E | STMicroelectronics | Datasheet | 960 | - | Min: 1 Mult: 1 | 25 Weeks | Surface Mount | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 3 | 1 | Tape & Reel (TR) | e3 | Active | 3 (168 Hours) | 2 | EAR99 | Matte Tin (Sn) - annealed | 165°C | -65°C | HIGH RELIABILITY | 52.8W | DUAL | GULL WING | 250 | 4A | 500MHz | 30 | PD55008 | 10 | R-PDSO-G2 | Single | ENHANCEMENT MODE | 52.8W | SOURCE | 150mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 4A | 20V | 17dB | 8W | 4A | 40V | METAL-OXIDE SEMICONDUCTOR | 12.5V | No | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No BF999E6327HTSA1 | Infineon Technologies | Datasheet | 5473 |
| Min: 1 Mult: 1 | 6 Weeks | Tin | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | 1 | Military grade | Tape & Reel (TR) | 2007 | e3 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | 20V | 200mW | DUAL | GULL WING | 30mA | 45MHz | SINGLE | 1 | DEPLETION MODE | 10mA | Not Halogen Free | N-Channel | 30mA | 12V | 27dB | METAL-OXIDE SEMICONDUCTOR | 2.1dB | 10V | No | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No VRF152GMP | Microchip Technology | Datasheet | - | - | Min: 1 Mult: 1 | VRF152 | Microchip Technology / Atmel | 1 | Microchip | Microchip Technology | Bulk | Active | - | MOSFETs | Si | RF MOSFET Transistors | RF MOSFET Transistors | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No SMMBFJ310LT1G | ON Semiconductor | Datasheet | 160 | - | Min: 1 Mult: 1 | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | Tin | TO-236-3, SC-59, SOT-23-3 | YES | 3 | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101 | e3 | yes | Active | 1 (Unlimited) | EAR99 | 150°C | -55°C | 60mA | MMBFJ310 | 3 | Single | 10mA | Halogen Free | N-Channel JFET | 25V | 12dB | JUNCTION | 0.225W | 10V | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No PD20010-E | STMicroelectronics | Datasheet | - |
| Min: 1 Mult: 1 | 25 Weeks | ACTIVE (Last Updated: 7 months ago) | Surface Mount | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 3 | 1 | Tube | Active | 3 (168 Hours) | 2 | EAR99 | 165°C | -65°C | ESD PROTECTION, HIGH RELIABILITY | 59W | DUAL | GULL WING | NOT SPECIFIED | 5A | 2GHz | NOT SPECIFIED | PD20010 | 10 | R-PDSO-G2 | Not Qualified | Single | ENHANCEMENT MODE | 59W | SOURCE | 150mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 5A | 15V | 11dB | 15W | 5A | 40V | 10W | METAL-OXIDE SEMICONDUCTOR | 13.6V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MW6S004NT1 | NXP USA Inc. | Datasheet | 512 | - | Min: 1 Mult: 1 | 10 Weeks | PLD-1.5 | YES | SILICON | 1 | 150°C | Military grade | 68V | Tape & Reel (TR) | 2009 | e3 | Active | 3 (168 Hours) | 4 | EAR99 | Matte Tin (Sn) | 8541.29.00.75 | QUAD | NO LEAD | 260 | 1.96GHz | 40 | MW6S004 | R-PQSO-N4 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | 50mA | AMPLIFIER | N-CHANNEL | LDMOS | 18dB | 68V | 4W | METAL-OXIDE SEMICONDUCTOR | 28V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MRF6V2010NR1 | NXP USA Inc. | Datasheet | 309 | - | Min: 1 Mult: 1 | 10 Weeks | TO-270AA | YES | SILICON | 1 | 225°C | 110V | Tape & Reel (TR) | 2006 | e3 | Active | 3 (168 Hours) | 2 | EAR99 | Tin (Sn) | 8541.29.00.75 | DUAL | FLAT | 260 | not_compliant | 220MHz | 40 | MRF6V2010 | R-PDFM-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | 30mA | AMPLIFIER | N-CHANNEL | LDMOS | 23.9dB | 110V | 10W | METAL-OXIDE SEMICONDUCTOR | 50V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No PD55008-E | STMicroelectronics | Datasheet | 800 | - | Min: 1 Mult: 1 | 25 Weeks | ACTIVE (Last Updated: 8 months ago) | Surface Mount | PowerSO-10 Exposed Bottom Pad | 3 | 1 | Military grade | Tube | e3 | Active | 3 (168 Hours) | 2 | EAR99 | Matte Tin (Sn) - annealed | 165°C | -65°C | HIGH RELIABILITY | 40V | 52.8W | DUAL | GULL WING | 250 | 4A | 500MHz | 30 | PD55008 | 10 | R-PDSO-G2 | Single | ENHANCEMENT MODE | 52.8W | SOURCE | 150mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 4A | 20V | 8W | 4A | 40V | 58pF | METAL-OXIDE SEMICONDUCTOR | 12.5V | 40V | 17dB | 3.5mm | 7.5mm | 9.4mm | No | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No VRF151 | Microchip Technology | Datasheet | - | - | Min: 1 Mult: 1 | M174 | M174 | VRF151 | 16 | 1 | 5 mS | 16 A | + 150 C | Microchip Technology | - 65 C | Flange Mount | Tube | 300 W | Active | - | Details | N-Channel | 0.566059 oz | 180 V | 40 V | 3.6 V | 170 V | - | RF Power MOSFET | 1mA | 175MHz | 175 MHz | N-Channel | 300 | 150 W | 250 mA | - 65 C to + 150 C | 22 dB | N | 150W | - | 50 V |
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MRF8S9200NR3
NXP USA Inc.
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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MMBFJ310LT1G
ON Semiconductor
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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BF998E6327HTSA1
Infineon Technologies
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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MMBFJ309LT1G
ON Semiconductor
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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MMBF5484
ON Semiconductor
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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PD55003L-E
STMicroelectronics
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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PD54008L-E
STMicroelectronics
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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2SK3557-6-TB-E
ON Semiconductor
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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PD55003-E
STMicroelectronics
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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MMBF4416A
ON Semiconductor
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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MMBF5485
ON Semiconductor
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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PD55008TR-E
STMicroelectronics
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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BF999E6327HTSA1
Infineon Technologies
Package:Transistors - FETs, MOSFETs - RF
0.112863
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VRF152GMP
Microchip Technology
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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SMMBFJ310LT1G
ON Semiconductor
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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PD20010-E
STMicroelectronics
Package:Transistors - FETs, MOSFETs - RF
10.928744
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MW6S004NT1
NXP USA Inc.
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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MRF6V2010NR1
NXP USA Inc.
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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PD55008-E
STMicroelectronics
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire
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VRF151
Microchip Technology
Package:Transistors - FETs, MOSFETs - RF
Price: please inquire