BGA715N7E6330 alternative parts: BGA7M1N6E6327XTSA1
Hide Shared Attributes | ||
Mfr.'s Part #: | ||
Manufacturer: | ||
Category: | ||
Datasheet: | ||
Inventory count: | please inquire | 40 |
Pricing(USD): | please inquire | $0.441684 |
Description: | Low Noise Amplifier for LTE | |
Rohs: | ||
Packaging: | Tape & Reel (TR) | Tape & Reel (TR) |
Frequency: | 1.615GHz | 1.8GHz~2.2GHz |
Test Frequency: | 1.575GHz | - |
Operating Supply Current: | 3.3mA | 4.4mA |
Gain: | 20 dB | 13dB |
RF/Microwave Device Type: | NARROW BAND LOW POWER | - |
Noise Figure: | 0.7 dB | 0.6dB |
P1dB: | -15.5 dBm | -7dBm |
RoHS Status: | RoHS Compliant | ROHS3 Compliant |
Factory Lead Time: | - | 12 Weeks |
Mount: | - | Surface Mount |
Mounting Type: | - | Surface Mount |
Package / Case: | - | 6-XFDFN |
Usage Level: | - | Industrial grade |
Published: | - | 2014 |
JESD-609 Code: | - | e3 |
Part Status: | - | Active |
Moisture Sensitivity Level (MSL): | - | 1 (Unlimited) |
Number of Terminations: | - | 6 |
Terminal Finish: | - | Tin (Sn) |
Max Operating Temperature: | - | 85°C |
Min Operating Temperature: | - | -40°C |
HTS Code: | - | 8542.39.00.01 |
Max Power Dissipation: | - | 60mW |
Voltage - Supply: | - | 1.5V~3.3V |
Terminal Position: | - | DUAL |
Terminal Form: | - | NO LEAD |
Peak Reflow Temperature (Cel): | - | NOT SPECIFIED |
Number of Functions: | - | 1 |
Supply Voltage: | - | 1.8V |
Terminal Pitch: | - | 0.4mm |
Time@Peak Reflow Temperature-Max (s): | - | NOT SPECIFIED |
JESD-30 Code: | - | R-PDSO-N6 |
Temperature Grade: | - | INDUSTRIAL |
Halogen Free: | - | Halogen Free |
Telecom IC Type: | - | TELECOM CIRCUIT |
RF Type: | - | LTE |
Length: | - | 1.1mm |
Height Seated (Max): | - | 0.4mm |
Width: | - | 0.7mm |
Lead Free: | - | Lead Free |
RF/IF and RFID Related Parts
| Image | Part Number | Manufacturer | Catalog | Package | Description | Compare |
|---|---|---|---|---|---|---|
![]() | BGA725L6E6327FTSA1 | Infineon Technologies | RF Amplifiers | 6-XFDFN | GPS Amp Single Low Noise 1.615GHz 3.6V 6-Pin TSLP T/R | Compare |
![]() | BGA7M1N6E6327XTSA1 | Infineon Technologies | RF Amplifiers | 6-XFDFN | Low Noise Amplifier for LTE | Compare |
![]() | BGA7H1N6E6327XTSA1 | Infineon Technologies | RF Amplifiers | 6-XFDFN | RF Amp Chip Single General Purpose Amplifier 2.69GHz 3.3V 6-Pin TSNP T/R | Compare |
![]() | BGA715N7E6327XTSA2 | Infineon Technologies | RF Amplifiers | 6-XFDFN Exposed Pad | IC AMP GPS 1.55-1.615GHZ TSNP7-1 | Compare |
![]() | BGA7L1N6E6327XTSA1 | Infineon Technologies | RF Amplifiers | 6-XFDFN | IC AMP LTE 728MHZ-960MHZ TSNP6-2 | Compare |
![]() | BGA7210X | NXP USA Inc. | RF Amplifiers | 32-VFQFN Exposed Pad | IC AMP GP 700MHZ-3.8GHZ 32HVQFN | Compare |
![]() | BGA729N6E6327XTSA1 | Infineon Technologies | RF Amplifiers | 6-XFDFN | IC RF AMP 70MHZ-1GHZ TSNP6-2 | Compare |
![]() | BGA777N7E6327XTSA1 | Infineon Technologies | RF Amplifiers | 6-XFDFN Exposed Pad | IC AMP UMTS 2.3-2.7GHZ TSNP7-1 | Compare |





