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G5S12015M alternative parts: G3S06506C
 RFQ RFQ | RFQ RFQ | |
Mfr.'s Part #: | ||
Manufacturer: | ||
Category: | ||
Datasheet: | - | - |
Inventory count: | please inquire | please inquire |
Pricing(USD): | please inquire | please inquire |
Description: | 650V/ 6A Silicon Carbide Power Schottky Barrier Diode | |
Rohs: | ||
Qc(nC),TJ=25℃: | 80（VR=800V） | - |
Ifsm(A),Tc=25℃: | 165 | - |
IF(A),Tc=25℃: | 34.5 | - |
IF(A),Tc=125℃: | 16（135℃） | - |
IF(A),Tc=160℃: | 15（139℃） | - |
Vrrm(V): | 1200 | - |
Config.: | Single | - |
Ptot(W),Tc=110℃: | 53 | - |
Ptot(W),Tc=25℃: | 122 | - |
Mounting Type: | - | Surface Mount |
Package / Case: | - | 144-LBGA |
Supplier Device Package: | - | 144-MAPBGA (13x13) |
Number of I/Os: | - | 98 |
Package: | - | Tray |
Base Product Number: | - | PK40 |
Mfr: | - | NXP USA Inc. |
Data Converters: | - | A/D 27x16b; D/A 2x12b |
Product Status: | - | Obsolete |
Rad Hardened: | - | No |
Operating Temperature: | - | -40°C ~ 105°C (TA) |
Series: | - | Kinetis K40 |
Oscillator Type: | - | Internal |
Speed: | - | 100MHz |
Diode Type: | - | Silicon Carbide Schottky |
RAM Size: | - | 64K x 8 |
Current - Reverse Leakage @ Vr: | - | 50 µA @ 650 V |
Voltage - Forward (Vf) (Max) @ If: | - | 1.7 V @ 6 A |
Voltage - Supply (Vcc/Vdd): | - | 1.71V ~ 3.6V |
Core Processor: | - | ARM® Cortex®-M4 |
Peripherals: | - | DMA, I²S, LCD, LVD, POR, PWM, WDT |
Program Memory Type: | - | FLASH |
Core Size: | - | 32-Bit Single-Core |
Program Memory Size: | - | 256KB (256K x 8) |
Connectivity: | - | CANbus, EBI/EMI, I²C, IrDA, SD, SPI, UART/USART, USB, USB OTG |
Operating Temperature - Junction: | - | -55°C ~ 175°C |
Voltage - DC Reverse (Vr) (Max): | - | 650 V |
Current - Average Rectified (Io): | - | 22.5A |
EEPROM Size: | - | 4K x 8 |
Capacitance @ Vr, F: | - | 424pF @ 0V, 1MHz |
Reverse Recovery Time (trr): | - | 0 ns |
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